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ZXT11N15DFTA

SKU: ZXT11N15DFTA

Regular price ₹ 41.30
Sale price ₹ 41.30 Regular price
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DIODES ZETEX ZXT11N15DFTA - NPN Bipolar Transistor (Obsolete)

The DIODES ZETEX ZXT11N15DFTA is a high-performance NPN bipolar junction transistor designed for various electronic applications requiring reliable switching and amplification. Manufactured in Germany, this device offers robust electrical characteristics and is packaged in a SOT23-3 form factor, suitable for surface-mount assembly.

  • Part Number: ZXT11N15DFTA
  • Manufacturer: DIODES ZETEX
  • Country of Origin: Germany (DE)
  • UOM: Each (EA)
  • ECCN: EAR99
  • Package Type: SOT23
  • Datasheet: Download Datasheet

Key Features

  • Collector-Base Voltage (VCBO): 40V
  • Collector-Emitter Voltage (VCEO): 15V
  • Emitter-Base Voltage (VEBO): 7.5V
  • Continuous Collector Current (IC): 3A
  • Peak Pulse Collector Current (ICM): 5A
  • Low Saturation Voltage (VCE(sat)): <10mV @ 100mA
  • Low On-Resistance (R sat): 37mΩ
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free, "Green" Device

Electrical and Thermal Specifications

Characteristic Symbol Value Unit
Collector-Base Breakdown Voltage BVCBO 40 V
Collector-Emitter Breakdown Voltage BVCEO 15 V
Emitter-Base Breakdown Voltage BVEBO 7.5 V
Collector Cutoff Current ICBO 100 nA
Collector Emitter Cutoff Current ICES 100 nA
Emitter Cutoff Current IEBO 100 nA
Collector-Emitter Saturation Voltage VCE(sat) 7-150 mV
Base-Emitter Saturation Voltage VBE(sat) 0.9-1.0 V
DC Current Gain (hFE) hFE 150-900
Thermal Resistance, Junction to Ambient RθJA 155-200 °C/W
Power Dissipation PD 625-806 mW
Operating Temperature Range TJ, TSTG -55 to +150 °C

Additional Information

This product is now obsolete. For alternative solutions, please consider the FMMT617. For more details, refer to the datasheet or contact your Diodes representative.

Note: The datasheet was not processed; please search the internet for the part number for more details.

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