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BIDNW30N60H3

SKU: BIDNW30N60H3

Regular price ₹ 209.27
Sale price ₹ 209.27 Regular price
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BOURNS BIDNW30N60H3 IGBT TRENCH FS 600V 60A

Introducing the BOURNS BIDNW30N60H3, a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding electronic applications. Manufactured in China, this IGBT features a trench technology structure optimized for efficient switching and power management.

Product Features

  • High voltage capability of 600V, suitable for high-power applications
  • Maximum continuous current of 60A for robust power handling
  • Trench Foward Step (FS) technology for low conduction and switching losses
  • Package Type: TO-247N in a tube configuration for easy handling and installation
  • RoHS compliant, ensuring environmentally friendly manufacturing standards
  • ECCN: EAR99 for export classification
  • Part Number: BIDNW30N60H3
  • Manufacturer: BOURNS
  • Country of Origin: CN (China)
  • Unit of Measure: Each (EA)

Specifications

Parameter Value
Voltage Rating 600V
Continuous Current 60A
Package Type TO-247N (Tube)
Part Number BIDNW30N60H3
Manufacturer BOURNS
Country of Origin CN
ECCN EAR99

Product Image

BOURNS BIDNW30N60H3

Additional Information

For detailed technical specifications and datasheet information, please visit the Datasheet. If you require further details, search the internet for the part number BIDNW30N60H3.

Note: Datasheet was not processed; please search the internet for the part number for more details.


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