The HCT7000M is a high-performance enhancement mode N-channel MOSFET manufactured by OPTEK/TT ELECTRONICS. Designed for various switching applications, this transistor offers reliable performance in compact surface-mount packages.
Part Number: HCT7000M
Manufacturer: OPTEK/TT ELECTRONICS
Country of Origin: MX
Unit of Measure: EA
ECCN: EAR99
Package Type: BLK
Features:
Maximum Drain Source Voltage: 60V
Maximum Gate-Source Voltage: ±40V
Maximum Drain Current: 200mA
Power Dissipation: 300mW at 25°C (600mW with proper mounting)
RDS(ON): Less than 5Ω
Surface-mount ceramic package with ultra-small footprint
Pin-out compatible with most SOT23 MOSFETs
Electrical characteristics similar to JEDEC 2N7000
Key Electrical Characteristics (at 25°C):
Parameter
Min
Max
Units
Test Conditions
Drain Source Voltage (VDSS)
60
V
V = 0 V, I = 10 µA
Gate Threshold Voltage (VGS(TH))
0.8
3.0
V
V = VGS, I = 1 mA
Gate Leakage (IGSS)
±10
nA
V = 0 V, V = ±15 V
Zero Gate Voltage Drain Current (IDSS)
1
µA
V = 0 V, V = 48 V
On-State Drain Current (ID(ON))
75
mA
V = 10 V, VGS = 4.5 V
Drain Source On-Resistance (RDS(ON))
5
Ω
V = 10 V, I = 0.5 A
Drain Source On-Voltage (VDS(ON))
2.5
V
V = 10 V, I = 0.5 A
Forward Transconductance (Gfs)
100
mS
V = 10 V, I = 0.2 A
Input Capacitance (Ciss)
60
pF
V = 25 V, f = 1 MHz
Output Capacitance (Coss)
25
pF
Reverse Transfer Capacitance (Crss)
5
pF
Turn-On Time (ton)
10
ns
V = 15 V, I = 0.5 A
Turn-Off Time (toff)
10
ns
For detailed electrical characteristics and application information, please refer to the datasheet.
Note: The datasheet was not processed; please search the internet for the part number for more details.
Use left/right arrows to navigate the slideshow or swipe left/right if using a mobile device
Choosing a selection results in a full page refresh.
Press the space key then arrow keys to make a selection.
Shopping Cart
{"id":10026059071805,"title":"HCT7000M","handle":"hct7000m","description":"\u003ch3\u003eHCT7000M Small Signal Field-Effect Transistor\u003c\/h3\u003e\n\u003cp\u003eThe \u003cstrong\u003eHCT7000M\u003c\/strong\u003e is a high-performance enhancement mode N-channel MOSFET manufactured by \u003cstrong\u003eOPTEK\/TT ELECTRONICS\u003c\/strong\u003e. Designed for various switching applications, this transistor offers reliable performance in compact surface-mount packages.\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003ePart Number: HCT7000M\u003c\/li\u003e\n\u003cli\u003eManufacturer: OPTEK\/TT ELECTRONICS\u003c\/li\u003e\n\u003cli\u003eCountry of Origin: MX\u003c\/li\u003e\n\u003cli\u003eUnit of Measure: EA\u003c\/li\u003e\n\u003cli\u003eECCN: EAR99\u003c\/li\u003e\n\u003cli\u003ePackage Type: BLK\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003eFeatures:\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003eMaximum Drain Source Voltage: 60V\u003c\/li\u003e\n\u003cli\u003eMaximum Gate-Source Voltage: ±40V\u003c\/li\u003e\n\u003cli\u003eMaximum Drain Current: 200mA\u003c\/li\u003e\n\u003cli\u003ePower Dissipation: 300mW at 25°C (600mW with proper mounting)\u003c\/li\u003e\n\u003cli\u003eR\u003csub\u003eDS(ON)\u003c\/sub\u003e: Less than 5Ω\u003c\/li\u003e\n\u003cli\u003eSurface-mount ceramic package with ultra-small footprint\u003c\/li\u003e\n\u003cli\u003ePin-out compatible with most SOT23 MOSFETs\u003c\/li\u003e\n\u003cli\u003eElectrical characteristics similar to JEDEC 2N7000\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003eKey Electrical Characteristics (at 25°C):\u003c\/p\u003e\n\u003ctable\u003e\n\u003cthead\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnits\u003c\/th\u003e\n\u003cth\u003eTest Conditions\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003c\/thead\u003e\n\u003ctbody\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain Source Voltage (V\u003csub\u003eDSS\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e60\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003ctd\u003eV = 0 V, I = 10 µA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate Threshold Voltage (V\u003csub\u003eGS(TH)\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e0.8\u003c\/td\u003e\n\u003ctd\u003e3.0\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003ctd\u003eV = V\u003csub\u003eGS\u003c\/sub\u003e, I = 1 mA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate Leakage (I\u003csub\u003eGSS\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e±10\u003c\/td\u003e\n\u003ctd\u003enA\u003c\/td\u003e\n\u003ctd\u003eV = 0 V, V = ±15 V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eZero Gate Voltage Drain Current (I\u003csub\u003eDSS\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e1\u003c\/td\u003e\n\u003ctd\u003eµA\u003c\/td\u003e\n\u003ctd\u003eV = 0 V, V = 48 V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOn-State Drain Current (I\u003csub\u003eD(ON)\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e75\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003emA\u003c\/td\u003e\n\u003ctd\u003eV = 10 V, V\u003csub\u003eGS\u003c\/sub\u003e = 4.5 V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain Source On-Resistance (R\u003csub\u003eDS(ON)\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e5\u003c\/td\u003e\n\u003ctd\u003eΩ\u003c\/td\u003e\n\u003ctd\u003eV = 10 V, I = 0.5 A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain Source On-Voltage (V\u003csub\u003eDS(ON)\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e2.5\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003ctd\u003eV = 10 V, I = 0.5 A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eForward Transconductance (G\u003csub\u003efs\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e100\u003c\/td\u003e\n\u003ctd\u003emS\u003c\/td\u003e\n\u003ctd\u003eV = 10 V, I = 0.2 A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eInput Capacitance (C\u003csub\u003eiss\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e60\u003c\/td\u003e\n\u003ctd\u003epF\u003c\/td\u003e\n\u003ctd\u003eV = 25 V, f = 1 MHz\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOutput Capacitance (C\u003csub\u003eoss\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e25\u003c\/td\u003e\n\u003ctd\u003epF\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eReverse Transfer Capacitance (C\u003csub\u003erss\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e5\u003c\/td\u003e\n\u003ctd\u003epF\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTurn-On Time (t\u003csub\u003eon\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e10\u003c\/td\u003e\n\u003ctd\u003ens\u003c\/td\u003e\n\u003ctd\u003eV = 15 V, I = 0.5 A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTurn-Off Time (t\u003csub\u003eoff\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e10\u003c\/td\u003e\n\u003ctd\u003ens\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\n\u003c\/table\u003e\n\u003cp\u003eFor detailed electrical characteristics and application information, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/productfiles\/mf-op\/hct7000mtxtxv.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e.\u003c\/p\u003e\n\u003cp\u003e\u003cem\u003eNote: The datasheet was not processed; please search the internet for the part number for more details.\u003c\/em\u003e\u003c\/p\u003e\u003cbr\u003e","published_at":"2025-08-15T00:31:50+05:30","created_at":"2025-08-15T00:31:53+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["IMPORT_CSV","Mosfets","OPTEK-TTEL","Semiconductors","WLDM"],"price":251820,"price_min":251820,"price_max":251820,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50621150724413,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"HCT7000M","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"HCT7000M","public_title":null,"options":["Default Title"],"price":251820,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"HCT7000M","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/HCT7000M_51290951_57506eb6.jpg?v=1755198113"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/HCT7000M_51290951_57506eb6.jpg?v=1755198113","options":["Title"],"media":[{"alt":null,"id":45843622297917,"position":1,"preview_image":{"aspect_ratio":1.0,"height":200,"width":200,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/HCT7000M_51290951_57506eb6.jpg?v=1755198113"},"aspect_ratio":1.0,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/HCT7000M_51290951_57506eb6.jpg?v=1755198113","width":200}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eHCT7000M Small Signal Field-Effect Transistor\u003c\/h3\u003e\n\u003cp\u003eThe \u003cstrong\u003eHCT7000M\u003c\/strong\u003e is a high-performance enhancement mode N-channel MOSFET manufactured by \u003cstrong\u003eOPTEK\/TT ELECTRONICS\u003c\/strong\u003e. Designed for various switching applications, this transistor offers reliable performance in compact surface-mount packages.\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003ePart Number: HCT7000M\u003c\/li\u003e\n\u003cli\u003eManufacturer: OPTEK\/TT ELECTRONICS\u003c\/li\u003e\n\u003cli\u003eCountry of Origin: MX\u003c\/li\u003e\n\u003cli\u003eUnit of Measure: EA\u003c\/li\u003e\n\u003cli\u003eECCN: EAR99\u003c\/li\u003e\n\u003cli\u003ePackage Type: BLK\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003eFeatures:\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003eMaximum Drain Source Voltage: 60V\u003c\/li\u003e\n\u003cli\u003eMaximum Gate-Source Voltage: ±40V\u003c\/li\u003e\n\u003cli\u003eMaximum Drain Current: 200mA\u003c\/li\u003e\n\u003cli\u003ePower Dissipation: 300mW at 25°C (600mW with proper mounting)\u003c\/li\u003e\n\u003cli\u003eR\u003csub\u003eDS(ON)\u003c\/sub\u003e: Less than 5Ω\u003c\/li\u003e\n\u003cli\u003eSurface-mount ceramic package with ultra-small footprint\u003c\/li\u003e\n\u003cli\u003ePin-out compatible with most SOT23 MOSFETs\u003c\/li\u003e\n\u003cli\u003eElectrical characteristics similar to JEDEC 2N7000\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003eKey Electrical Characteristics (at 25°C):\u003c\/p\u003e\n\u003ctable\u003e\n\u003cthead\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnits\u003c\/th\u003e\n\u003cth\u003eTest Conditions\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003c\/thead\u003e\n\u003ctbody\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain Source Voltage (V\u003csub\u003eDSS\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e60\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003ctd\u003eV = 0 V, I = 10 µA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate Threshold Voltage (V\u003csub\u003eGS(TH)\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e0.8\u003c\/td\u003e\n\u003ctd\u003e3.0\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003ctd\u003eV = V\u003csub\u003eGS\u003c\/sub\u003e, I = 1 mA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate Leakage (I\u003csub\u003eGSS\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e±10\u003c\/td\u003e\n\u003ctd\u003enA\u003c\/td\u003e\n\u003ctd\u003eV = 0 V, V = ±15 V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eZero Gate Voltage Drain Current (I\u003csub\u003eDSS\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e1\u003c\/td\u003e\n\u003ctd\u003eµA\u003c\/td\u003e\n\u003ctd\u003eV = 0 V, V = 48 V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOn-State Drain Current (I\u003csub\u003eD(ON)\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e75\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003emA\u003c\/td\u003e\n\u003ctd\u003eV = 10 V, V\u003csub\u003eGS\u003c\/sub\u003e = 4.5 V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain Source On-Resistance (R\u003csub\u003eDS(ON)\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e5\u003c\/td\u003e\n\u003ctd\u003eΩ\u003c\/td\u003e\n\u003ctd\u003eV = 10 V, I = 0.5 A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain Source On-Voltage (V\u003csub\u003eDS(ON)\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e2.5\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003ctd\u003eV = 10 V, I = 0.5 A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eForward Transconductance (G\u003csub\u003efs\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e100\u003c\/td\u003e\n\u003ctd\u003emS\u003c\/td\u003e\n\u003ctd\u003eV = 10 V, I = 0.2 A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eInput Capacitance (C\u003csub\u003eiss\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e60\u003c\/td\u003e\n\u003ctd\u003epF\u003c\/td\u003e\n\u003ctd\u003eV = 25 V, f = 1 MHz\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOutput Capacitance (C\u003csub\u003eoss\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e25\u003c\/td\u003e\n\u003ctd\u003epF\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eReverse Transfer Capacitance (C\u003csub\u003erss\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e5\u003c\/td\u003e\n\u003ctd\u003epF\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTurn-On Time (t\u003csub\u003eon\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e10\u003c\/td\u003e\n\u003ctd\u003ens\u003c\/td\u003e\n\u003ctd\u003eV = 15 V, I = 0.5 A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTurn-Off Time (t\u003csub\u003eoff\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e10\u003c\/td\u003e\n\u003ctd\u003ens\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\n\u003c\/table\u003e\n\u003cp\u003eFor detailed electrical characteristics and application information, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/productfiles\/mf-op\/hct7000mtxtxv.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e.\u003c\/p\u003e\n\u003cp\u003e\u003cem\u003eNote: The datasheet was not processed; please search the internet for the part number for more details.\u003c\/em\u003e\u003c\/p\u003e\u003cbr\u003e"}
