Enhance your electronic projects with the high-performance VISHAY SEMICONDUCTOR IRF740ALPBF Power MOSFET. Designed for switch mode power supplies, uninterruptible power supplies, and high-speed power switching applications, this N-channel MOSFET offers reliable operation and robust specifications.
Fully characterized capacitance and avalanche voltage and current
Low gate charge (Qg), resulting in simple drive requirements
Improved gate, avalanche, and dynamic dV/dt ruggedness
Effective Rds(on) with Vgs = 10 V
RoHS-compliant options available
Key Specifications
Parameter
Symbol
Min
Typ
Max
Unit
Drain-Source Voltage
Vds
-
-
400
V
Gate-Source Voltage
Vgs
±30
-
-
V
Continuous Drain Current at 25°C
Id
-
10
-
A
Drain Current at 100°C
Id
-
6.3
-
A
Pulsed Drain Current
Idm
-
40
-
A
Maximum Power Dissipation
Pd
-
3.1
-
W
Maximum Power Dissipation at 125°C
Pd
-
125
-
W
Maximum Junction Temperature
Tj
-55
150
-
°C
Maximum Storage Temperature
Tstg
-55
150
-
°C
Gate Charge (Qg)
Qg
-
36
-
nC
Rds(on) Vgs=10V
Rds(on)
-
0.55
-
Ω
Additional Details
Effective capacitance and avalanche energy are fully characterized for reliable switching performance.
Maximum junction-to-ambient thermal resistance: 40°C/W (when mounted on 1" square PCB).
Maximum junction-to-case resistance: 1.0Ω.
Soldering temperature peak: 300°C for 10 seconds.
For more detailed specifications and application information, please refer to the datasheet. Datasheet was not processed, please search the internet for the part number for more details.
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{"id":10025200156989,"title":"IRF740ALPBF","handle":"irf740alpbf","description":"\u003ch3\u003eVISHAY SEMICONDUCTOR IRF740ALPBF Transistor MOSFET N-CH 400V 10A 3-Pin TO-262\u003c\/h3\u003e\n\u003cp\u003eEnhance your electronic projects with the high-performance VISHAY SEMICONDUCTOR IRF740ALPBF Power MOSFET. Designed for switch mode power supplies, uninterruptible power supplies, and high-speed power switching applications, this N-channel MOSFET offers reliable operation and robust specifications.\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003ePart Number:\u003c\/strong\u003e IRF740ALPBF\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eManufacturer:\u003c\/strong\u003e VISHAY SEMICONDUCTOR\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eUnit of Measure:\u003c\/strong\u003e EA\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePackage Type:\u003c\/strong\u003e TO-262 (3-Pin, 3+Tab)\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePackage Format:\u003c\/strong\u003e TUBE\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eDatasheet:\u003c\/strong\u003e \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-irf740alpbf.pdf\" target=\"_blank\"\u003eIRF740ALPBF Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eFully characterized capacitance and avalanche voltage and current\u003c\/li\u003e\n\u003cli\u003eLow gate charge (Qg), resulting in simple drive requirements\u003c\/li\u003e\n\u003cli\u003eImproved gate, avalanche, and dynamic dV\/dt ruggedness\u003c\/li\u003e\n\u003cli\u003eEffective Rds(on) with Vgs = 10 V\u003c\/li\u003e\n\u003cli\u003eRoHS-compliant options available\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eKey Specifications\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\"\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eVds\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e400\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eVgs\u003c\/td\u003e\n\u003ctd\u003e±30\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous Drain Current at 25°C\u003c\/td\u003e\n\u003ctd\u003eId\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e10\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain Current at 100°C\u003c\/td\u003e\n\u003ctd\u003eId\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e6.3\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePulsed Drain Current\u003c\/td\u003e\n\u003ctd\u003eIdm\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e40\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Power Dissipation\u003c\/td\u003e\n\u003ctd\u003ePd\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e3.1\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Power Dissipation at 125°C\u003c\/td\u003e\n\u003ctd\u003ePd\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e125\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Junction Temperature\u003c\/td\u003e\n\u003ctd\u003eTj\u003c\/td\u003e\n\u003ctd\u003e-55\u003c\/td\u003e\n\u003ctd\u003e150\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Storage Temperature\u003c\/td\u003e\n\u003ctd\u003eTstg\u003c\/td\u003e\n\u003ctd\u003e-55\u003c\/td\u003e\n\u003ctd\u003e150\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate Charge (Qg)\u003c\/td\u003e\n\u003ctd\u003eQg\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e36\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003enC\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eRds(on) Vgs=10V\u003c\/td\u003e\n\u003ctd\u003eRds(on)\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e0.55\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eAdditional Details\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eEffective capacitance and avalanche energy are fully characterized for reliable switching performance.\u003c\/li\u003e\n\u003cli\u003eMaximum junction-to-ambient thermal resistance: 40°C\/W (when mounted on 1\" square PCB).\u003c\/li\u003e\n\u003cli\u003eMaximum junction-to-case resistance: 1.0Ω.\u003c\/li\u003e\n\u003cli\u003eSoldering temperature peak: 300°C for 10 seconds.\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003eFor more detailed specifications and application information, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-irf740alpbf.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e. Datasheet was not processed, please search the internet for the part number for more details.\u003c\/p\u003e\u003cbr\u003e","published_at":"2025-08-14T17:38:42+05:30","created_at":"2025-08-14T17:38:43+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["10A","400V","CH","IMPORT_CSV","Mosfets","Semiconductors","VISHA-SEM","WLDM"],"price":16077,"price_min":16077,"price_max":16077,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50619747893565,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"IRF740ALPBF","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"IRF740ALPBF","public_title":null,"options":["Default Title"],"price":16077,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"IRF740ALPBF","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/IRF740ALPBF_55984051_48b03e41.jpg?v=1755173326"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/IRF740ALPBF_55984051_48b03e41.jpg?v=1755173326","options":["Title"],"media":[{"alt":null,"id":45837604913469,"position":1,"preview_image":{"aspect_ratio":1.0,"height":200,"width":200,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/IRF740ALPBF_55984051_48b03e41.jpg?v=1755173326"},"aspect_ratio":1.0,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/IRF740ALPBF_55984051_48b03e41.jpg?v=1755173326","width":200}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eVISHAY SEMICONDUCTOR IRF740ALPBF Transistor MOSFET N-CH 400V 10A 3-Pin TO-262\u003c\/h3\u003e\n\u003cp\u003eEnhance your electronic projects with the high-performance VISHAY SEMICONDUCTOR IRF740ALPBF Power MOSFET. Designed for switch mode power supplies, uninterruptible power supplies, and high-speed power switching applications, this N-channel MOSFET offers reliable operation and robust specifications.\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003ePart Number:\u003c\/strong\u003e IRF740ALPBF\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eManufacturer:\u003c\/strong\u003e VISHAY SEMICONDUCTOR\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eUnit of Measure:\u003c\/strong\u003e EA\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePackage Type:\u003c\/strong\u003e TO-262 (3-Pin, 3+Tab)\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePackage Format:\u003c\/strong\u003e TUBE\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eDatasheet:\u003c\/strong\u003e \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-irf740alpbf.pdf\" target=\"_blank\"\u003eIRF740ALPBF Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eFully characterized capacitance and avalanche voltage and current\u003c\/li\u003e\n\u003cli\u003eLow gate charge (Qg), resulting in simple drive requirements\u003c\/li\u003e\n\u003cli\u003eImproved gate, avalanche, and dynamic dV\/dt ruggedness\u003c\/li\u003e\n\u003cli\u003eEffective Rds(on) with Vgs = 10 V\u003c\/li\u003e\n\u003cli\u003eRoHS-compliant options available\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eKey Specifications\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\"\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eVds\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e400\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eVgs\u003c\/td\u003e\n\u003ctd\u003e±30\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous Drain Current at 25°C\u003c\/td\u003e\n\u003ctd\u003eId\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e10\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain Current at 100°C\u003c\/td\u003e\n\u003ctd\u003eId\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e6.3\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePulsed Drain Current\u003c\/td\u003e\n\u003ctd\u003eIdm\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e40\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Power Dissipation\u003c\/td\u003e\n\u003ctd\u003ePd\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e3.1\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Power Dissipation at 125°C\u003c\/td\u003e\n\u003ctd\u003ePd\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e125\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Junction Temperature\u003c\/td\u003e\n\u003ctd\u003eTj\u003c\/td\u003e\n\u003ctd\u003e-55\u003c\/td\u003e\n\u003ctd\u003e150\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Storage Temperature\u003c\/td\u003e\n\u003ctd\u003eTstg\u003c\/td\u003e\n\u003ctd\u003e-55\u003c\/td\u003e\n\u003ctd\u003e150\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate Charge (Qg)\u003c\/td\u003e\n\u003ctd\u003eQg\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e36\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003enC\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eRds(on) Vgs=10V\u003c\/td\u003e\n\u003ctd\u003eRds(on)\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e0.55\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eAdditional Details\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eEffective capacitance and avalanche energy are fully characterized for reliable switching performance.\u003c\/li\u003e\n\u003cli\u003eMaximum junction-to-ambient thermal resistance: 40°C\/W (when mounted on 1\" square PCB).\u003c\/li\u003e\n\u003cli\u003eMaximum junction-to-case resistance: 1.0Ω.\u003c\/li\u003e\n\u003cli\u003eSoldering temperature peak: 300°C for 10 seconds.\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003eFor more detailed specifications and application information, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-irf740alpbf.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e. Datasheet was not processed, please search the internet for the part number for more details.\u003c\/p\u003e\u003cbr\u003e"}
