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IRFD220PBF
VISHAY SEMICONDUCTOR IRFD220PBF 200V N-Channel Power MOSFET
The VISHAY SEMICONDUCTOR IRFD220PBF is a high-performance, third-generation power MOSFET designed for efficient switching applications. Manufactured in China, this device offers a robust combination of fast switching, low on-resistance, and ruggedized construction, making it suitable for various power management and switching circuits.
Product Features
Dynamic dV/dt rating for high-speed switching
Repetitive avalanche rated for reliable operation under transient conditions
Designed for automatic insertion and end-stackable configurations
Fast switching capabilities with simple drive requirements
Ease of paralleling for higher current handling
Material categorization: for definitions of compliance, see Vishay documentation
Technical Specifications
Parameter
Symbol
Typical
Maximum
Unit
Drain-source voltage
VDS
-
200
V
Gate-source voltage
VGS
-
±20
V
Continuous drain current at 25°C
ID
0.80
-
A
Maximum power dissipation
PD
-
1.0
W
Drain-source on-resistance (VGS = 10 V)
RDS(on)
0.80
-
Ω
Gate charge (VGS = 10 V)
Qg
-
14
nC
Absolute Maximum Ratings
Parameter
Symbol
Limit
Unit
Drain-source voltage
VDS
200
V
Gate-source voltage
VGS
±20
V
Peak diode recovery dV/dt
dV/dt
5.0
V/ns
Operating junction temperature range
TJ, Tstg
-55 to +150
°C
Maximum power dissipation at 25°C
PD
1.0
W
Additional Details
Package Type: TUBE
UOM: EA
ECCN: EAR99
Product Category: Semiconductors | MOSFETs
Part Number: IRFD220PBF
Manufacturer: VISHAY SEMICONDUCTOR
Country of Origin: CN
Datasheet: IRFD220PBF Datasheet
For more detailed technical information, please refer to the datasheet linked above. The datasheet was not processed; please search the internet for the part number IRFD220PBF for additional details.
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Manufactured in China, this device offers a robust combination of fast switching, low on-resistance, and ruggedized construction, making it suitable for various power management and switching circuits.\u003c\/p\u003e\n\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003eDynamic dV\/dt rating for high-speed switching\u003c\/li\u003e\n \u003cli\u003eRepetitive avalanche rated for reliable operation under transient conditions\u003c\/li\u003e\n \u003cli\u003eDesigned for automatic insertion and end-stackable configurations\u003c\/li\u003e\n \u003cli\u003eFast switching capabilities with simple drive requirements\u003c\/li\u003e\n \u003cli\u003eEase of paralleling for higher current handling\u003c\/li\u003e\n \u003cli\u003eMaterial categorization: for definitions of compliance, see \u003ca href=\"http:\/\/www.vishay.com\/doc?99912\"\u003eVishay documentation\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003ch3\u003eTechnical Specifications\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"4\" cellspacing=\"0\"\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eTypical\u003c\/th\u003e\n \u003cth\u003eMaximum\u003c\/th\u003e\n \u003cth\u003eUnit\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n \u003ctd\u003eVDS\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e200\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate-source voltage\u003c\/td\u003e\n \u003ctd\u003eVGS\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e±20\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eContinuous drain current at 25°C\u003c\/td\u003e\n \u003ctd\u003eID\u003c\/td\u003e\n \u003ctd\u003e0.80\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003eA\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n \u003ctd\u003ePD\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e1.0\u003c\/td\u003e\n \u003ctd\u003eW\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-source on-resistance (VGS = 10 V)\u003c\/td\u003e\n \u003ctd\u003eRDS(on)\u003c\/td\u003e\n \u003ctd\u003e0.80\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003eΩ\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate charge (VGS = 10 V)\u003c\/td\u003e\n \u003ctd\u003eQg\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e14\u003c\/td\u003e\n \u003ctd\u003enC\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eAbsolute Maximum Ratings\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"4\" cellspacing=\"0\"\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eLimit\u003c\/th\u003e\n \u003cth\u003eUnit\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n \u003ctd\u003eVDS\u003c\/td\u003e\n \u003ctd\u003e200\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate-source voltage\u003c\/td\u003e\n \u003ctd\u003eVGS\u003c\/td\u003e\n \u003ctd\u003e±20\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003ePeak diode recovery dV\/dt\u003c\/td\u003e\n \u003ctd\u003edV\/dt\u003c\/td\u003e\n \u003ctd\u003e5.0\u003c\/td\u003e\n \u003ctd\u003eV\/ns\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eOperating junction temperature range\u003c\/td\u003e\n \u003ctd\u003eTJ, Tstg\u003c\/td\u003e\n \u003ctd\u003e-55 to +150\u003c\/td\u003e\n \u003ctd\u003e°C\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum power dissipation at 25°C\u003c\/td\u003e\n \u003ctd\u003ePD\u003c\/td\u003e\n \u003ctd\u003e1.0\u003c\/td\u003e\n \u003ctd\u003eW\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eAdditional Details\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003ePackage Type: TUBE\u003c\/li\u003e\n \u003cli\u003eUOM: EA\u003c\/li\u003e\n \u003cli\u003eECCN: EAR99\u003c\/li\u003e\n \u003cli\u003eProduct Category: Semiconductors | MOSFETs\u003c\/li\u003e\n \u003cli\u003ePart Number: IRFD220PBF\u003c\/li\u003e\n \u003cli\u003eManufacturer: VISHAY SEMICONDUCTOR\u003c\/li\u003e\n \u003cli\u003eCountry of Origin: CN\u003c\/li\u003e\n \u003cli\u003eDatasheet: \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-irfd220pbf.pdf\"\u003eIRFD220PBF Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003cp\u003eFor more detailed technical information, please refer to the datasheet linked above. The datasheet was not processed; please search the internet for the part number IRFD220PBF for additional details.\u003c\/p\u003e","published_at":"2025-08-15T06:31:55+05:30","created_at":"2025-08-15T06:31:56+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["200V","IMPORT_CSV","IMPORT_PT2","Mosfets","Semiconductors","VISHA-SEM","WLDM"],"price":7623,"price_min":7623,"price_max":7623,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50622109286717,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"IRFD220PBF","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"IRFD220PBF","public_title":null,"options":["Default Title"],"price":7623,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"IRFD220PBF","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/IRFD220PBF_44926324_0e81224a.jpg?v=1755219716"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/IRFD220PBF_44926324_0e81224a.jpg?v=1755219716","options":["Title"],"media":[{"alt":null,"id":45847116775741,"position":1,"preview_image":{"aspect_ratio":0.91,"height":200,"width":182,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/IRFD220PBF_44926324_0e81224a.jpg?v=1755219716"},"aspect_ratio":0.91,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/IRFD220PBF_44926324_0e81224a.jpg?v=1755219716","width":182}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eVISHAY SEMICONDUCTOR IRFD220PBF 200V N-Channel Power MOSFET\u003c\/h3\u003e\n\n\u003cp\u003eThe VISHAY SEMICONDUCTOR IRFD220PBF is a high-performance, third-generation power MOSFET designed for efficient switching applications. Manufactured in China, this device offers a robust combination of fast switching, low on-resistance, and ruggedized construction, making it suitable for various power management and switching circuits.\u003c\/p\u003e\n\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003eDynamic dV\/dt rating for high-speed switching\u003c\/li\u003e\n \u003cli\u003eRepetitive avalanche rated for reliable operation under transient conditions\u003c\/li\u003e\n \u003cli\u003eDesigned for automatic insertion and end-stackable configurations\u003c\/li\u003e\n \u003cli\u003eFast switching capabilities with simple drive requirements\u003c\/li\u003e\n \u003cli\u003eEase of paralleling for higher current handling\u003c\/li\u003e\n \u003cli\u003eMaterial categorization: for definitions of compliance, see \u003ca href=\"http:\/\/www.vishay.com\/doc?99912\"\u003eVishay documentation\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003ch3\u003eTechnical Specifications\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"4\" cellspacing=\"0\"\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eTypical\u003c\/th\u003e\n \u003cth\u003eMaximum\u003c\/th\u003e\n \u003cth\u003eUnit\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n \u003ctd\u003eVDS\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e200\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate-source voltage\u003c\/td\u003e\n \u003ctd\u003eVGS\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e±20\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eContinuous drain current at 25°C\u003c\/td\u003e\n \u003ctd\u003eID\u003c\/td\u003e\n \u003ctd\u003e0.80\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003eA\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n \u003ctd\u003ePD\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e1.0\u003c\/td\u003e\n \u003ctd\u003eW\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-source on-resistance (VGS = 10 V)\u003c\/td\u003e\n \u003ctd\u003eRDS(on)\u003c\/td\u003e\n \u003ctd\u003e0.80\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003eΩ\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate charge (VGS = 10 V)\u003c\/td\u003e\n \u003ctd\u003eQg\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e14\u003c\/td\u003e\n \u003ctd\u003enC\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eAbsolute Maximum Ratings\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"4\" cellspacing=\"0\"\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eLimit\u003c\/th\u003e\n \u003cth\u003eUnit\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n \u003ctd\u003eVDS\u003c\/td\u003e\n \u003ctd\u003e200\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate-source voltage\u003c\/td\u003e\n \u003ctd\u003eVGS\u003c\/td\u003e\n \u003ctd\u003e±20\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003ePeak diode recovery dV\/dt\u003c\/td\u003e\n \u003ctd\u003edV\/dt\u003c\/td\u003e\n \u003ctd\u003e5.0\u003c\/td\u003e\n \u003ctd\u003eV\/ns\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eOperating junction temperature range\u003c\/td\u003e\n \u003ctd\u003eTJ, Tstg\u003c\/td\u003e\n \u003ctd\u003e-55 to +150\u003c\/td\u003e\n \u003ctd\u003e°C\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum power dissipation at 25°C\u003c\/td\u003e\n \u003ctd\u003ePD\u003c\/td\u003e\n \u003ctd\u003e1.0\u003c\/td\u003e\n \u003ctd\u003eW\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eAdditional Details\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003ePackage Type: TUBE\u003c\/li\u003e\n \u003cli\u003eUOM: EA\u003c\/li\u003e\n \u003cli\u003eECCN: EAR99\u003c\/li\u003e\n \u003cli\u003eProduct Category: Semiconductors | MOSFETs\u003c\/li\u003e\n \u003cli\u003ePart Number: IRFD220PBF\u003c\/li\u003e\n \u003cli\u003eManufacturer: VISHAY SEMICONDUCTOR\u003c\/li\u003e\n \u003cli\u003eCountry of Origin: CN\u003c\/li\u003e\n \u003cli\u003eDatasheet: \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-irfd220pbf.pdf\"\u003eIRFD220PBF Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003cp\u003eFor more detailed technical information, please refer to the datasheet linked above. The datasheet was not processed; please search the internet for the part number IRFD220PBF for additional details.\u003c\/p\u003e"}
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