VISHAY SEMICONDUCTOR IRFD9210PBF Trans MOSFET P-CH 200V 0.4A HVMDIP
The IRFD9210PBF is a high-performance P-channel power MOSFET manufactured by Vishay Semiconductor, designed for efficient switching applications. This device features a robust 200V drain-source voltage rating and a low on-state resistance, making it suitable for various power management and switching circuits.
Product Features
Dynamic dV/dt rating for reliable switching
Repetitive avalanche rated for durability under transient conditions
Designed for automatic insertion with end stackable capability
Fast switching characteristics for high-speed applications
Ease of paralleling for higher current handling
P-channel configuration for complementary power circuits
Specifications
Parameter
Symbol
Rating
Unit
Drain-source voltage
VDS
-200
V
Gate-source voltage
VGS
±20
V
Continuous drain current at 25°C
ID
-0.40
A
Maximum power dissipation at 25°C
PD
1.0
W
Maximum junction temperature
TJ, Tstg
-55 to +150
°C
Additional Electrical Characteristics
Parameter
Symbol
Typ.
Max.
Unit
Drain-source breakdown voltage
VDS
-
-200
V
Gate-source threshold voltage
VGS(th)
-2.0
-4.0
V
On-state resistance at VGS = -10V
RDS(on)
-
3.0
Ω
Total gate charge at VGS = -10V
Qg
-
8.9
nC
Mechanical and Packaging
Package Type: HVMDIP
Lead (Pb)-free: IRFD9210PbF
Package is suitable for automated insertion and stacking
Additional Information
For detailed electrical characteristics, application guidelines, and handling instructions, please refer to the datasheet.
Product is ECCN EAR99 classified and complies with RoHS standards.
Datasheet was not processed please search the internet for the part number for more details.
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{"id":10025347842365,"title":"IRFD9210PBF","handle":"irfd9210pbf","description":"\u003ch3\u003eVISHAY SEMICONDUCTOR IRFD9210PBF Trans MOSFET P-CH 200V 0.4A HVMDIP\u003c\/h3\u003e\n\u003cp\u003eThe IRFD9210PBF is a high-performance P-channel power MOSFET manufactured by Vishay Semiconductor, designed for efficient switching applications. This device features a robust 200V drain-source voltage rating and a low on-state resistance, making it suitable for various power management and switching circuits.\u003c\/p\u003e\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003eDynamic dV\/dt rating for reliable switching\u003c\/li\u003e\n \u003cli\u003eRepetitive avalanche rated for durability under transient conditions\u003c\/li\u003e\n \u003cli\u003eDesigned for automatic insertion with end stackable capability\u003c\/li\u003e\n \u003cli\u003eFast switching characteristics for high-speed applications\u003c\/li\u003e\n \u003cli\u003eEase of paralleling for higher current handling\u003c\/li\u003e\n \u003cli\u003eP-channel configuration for complementary power circuits\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eSpecifications\u003c\/h3\u003e\n\u003ctable\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eRating\u003c\/th\u003e\n \u003cth\u003eUnit\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n \u003ctd\u003eVDS\u003c\/td\u003e\n \u003ctd\u003e-200\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate-source voltage\u003c\/td\u003e\n \u003ctd\u003eVGS\u003c\/td\u003e\n \u003ctd\u003e±20\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eContinuous drain current at 25°C\u003c\/td\u003e\n \u003ctd\u003eID\u003c\/td\u003e\n \u003ctd\u003e-0.40\u003c\/td\u003e\n \u003ctd\u003eA\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum power dissipation at 25°C\u003c\/td\u003e\n \u003ctd\u003ePD\u003c\/td\u003e\n \u003ctd\u003e1.0\u003c\/td\u003e\n \u003ctd\u003eW\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum junction temperature\u003c\/td\u003e\n \u003ctd\u003eTJ, Tstg\u003c\/td\u003e\n \u003ctd\u003e-55 to +150\u003c\/td\u003e\n \u003ctd\u003e°C\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eAdditional Electrical Characteristics\u003c\/h3\u003e\n\u003ctable\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eTyp.\u003c\/th\u003e\n \u003cth\u003eMax.\u003c\/th\u003e\n \u003cth\u003eUnit\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-source breakdown voltage\u003c\/td\u003e\n \u003ctd\u003eVDS\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e-200\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate-source threshold voltage\u003c\/td\u003e\n \u003ctd\u003eVGS(th)\u003c\/td\u003e\n \u003ctd\u003e-2.0\u003c\/td\u003e\n \u003ctd\u003e-4.0\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eOn-state resistance at VGS = -10V\u003c\/td\u003e\n \u003ctd\u003eRDS(on)\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e3.0\u003c\/td\u003e\n \u003ctd\u003eΩ\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eTotal gate charge at VGS = -10V\u003c\/td\u003e\n \u003ctd\u003eQg\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e8.9\u003c\/td\u003e\n \u003ctd\u003enC\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eMechanical and Packaging\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003ePackage Type: HVMDIP\u003c\/li\u003e\n \u003cli\u003eLead (Pb)-free: IRFD9210PbF\u003c\/li\u003e\n \u003cli\u003ePackage is suitable for automated insertion and stacking\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eAdditional Information\u003c\/h3\u003e\n\u003cp\u003eFor detailed electrical characteristics, application guidelines, and handling instructions, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-irfd9210pbf.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e.\u003c\/p\u003e\n\u003cp\u003eProduct is ECCN EAR99 classified and complies with RoHS standards.\u003c\/p\u003e\n\u003cp\u003eDatasheet was not processed please search the internet for the part number for more details.\u003c\/p\u003e\u003cbr\u003e","published_at":"2025-08-14T18:42:48+05:30","created_at":"2025-08-14T18:42:48+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["200V","4A","CH","IMPORT_CSV","Mosfets","Semiconductors","VISHA-SEM","WLDM"],"price":6375,"price_min":6375,"price_max":6375,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50619927331133,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"IRFD9210PBF","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"IRFD9210PBF","public_title":null,"options":["Default Title"],"price":6375,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"IRFD9210PBF","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/45025557.jpg?v=1755177171"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/45025557.jpg?v=1755177171","options":["Title"],"media":[{"alt":null,"id":45838418837821,"position":1,"preview_image":{"aspect_ratio":1.0,"height":420,"width":420,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/45025557.jpg?v=1755177171"},"aspect_ratio":1.0,"height":420,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/45025557.jpg?v=1755177171","width":420}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eVISHAY SEMICONDUCTOR IRFD9210PBF Trans MOSFET P-CH 200V 0.4A HVMDIP\u003c\/h3\u003e\n\u003cp\u003eThe IRFD9210PBF is a high-performance P-channel power MOSFET manufactured by Vishay Semiconductor, designed for efficient switching applications. This device features a robust 200V drain-source voltage rating and a low on-state resistance, making it suitable for various power management and switching circuits.\u003c\/p\u003e\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003eDynamic dV\/dt rating for reliable switching\u003c\/li\u003e\n \u003cli\u003eRepetitive avalanche rated for durability under transient conditions\u003c\/li\u003e\n \u003cli\u003eDesigned for automatic insertion with end stackable capability\u003c\/li\u003e\n \u003cli\u003eFast switching characteristics for high-speed applications\u003c\/li\u003e\n \u003cli\u003eEase of paralleling for higher current handling\u003c\/li\u003e\n \u003cli\u003eP-channel configuration for complementary power circuits\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eSpecifications\u003c\/h3\u003e\n\u003ctable\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eRating\u003c\/th\u003e\n \u003cth\u003eUnit\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n \u003ctd\u003eVDS\u003c\/td\u003e\n \u003ctd\u003e-200\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate-source voltage\u003c\/td\u003e\n \u003ctd\u003eVGS\u003c\/td\u003e\n \u003ctd\u003e±20\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eContinuous drain current at 25°C\u003c\/td\u003e\n \u003ctd\u003eID\u003c\/td\u003e\n \u003ctd\u003e-0.40\u003c\/td\u003e\n \u003ctd\u003eA\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum power dissipation at 25°C\u003c\/td\u003e\n \u003ctd\u003ePD\u003c\/td\u003e\n \u003ctd\u003e1.0\u003c\/td\u003e\n \u003ctd\u003eW\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum junction temperature\u003c\/td\u003e\n \u003ctd\u003eTJ, Tstg\u003c\/td\u003e\n \u003ctd\u003e-55 to +150\u003c\/td\u003e\n \u003ctd\u003e°C\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eAdditional Electrical Characteristics\u003c\/h3\u003e\n\u003ctable\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eTyp.\u003c\/th\u003e\n \u003cth\u003eMax.\u003c\/th\u003e\n \u003cth\u003eUnit\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-source breakdown voltage\u003c\/td\u003e\n \u003ctd\u003eVDS\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e-200\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate-source threshold voltage\u003c\/td\u003e\n \u003ctd\u003eVGS(th)\u003c\/td\u003e\n \u003ctd\u003e-2.0\u003c\/td\u003e\n \u003ctd\u003e-4.0\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eOn-state resistance at VGS = -10V\u003c\/td\u003e\n \u003ctd\u003eRDS(on)\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e3.0\u003c\/td\u003e\n \u003ctd\u003eΩ\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eTotal gate charge at VGS = -10V\u003c\/td\u003e\n \u003ctd\u003eQg\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e8.9\u003c\/td\u003e\n \u003ctd\u003enC\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eMechanical and Packaging\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003ePackage Type: HVMDIP\u003c\/li\u003e\n \u003cli\u003eLead (Pb)-free: IRFD9210PbF\u003c\/li\u003e\n \u003cli\u003ePackage is suitable for automated insertion and stacking\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eAdditional Information\u003c\/h3\u003e\n\u003cp\u003eFor detailed electrical characteristics, application guidelines, and handling instructions, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-irfd9210pbf.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e.\u003c\/p\u003e\n\u003cp\u003eProduct is ECCN EAR99 classified and complies with RoHS standards.\u003c\/p\u003e\n\u003cp\u003eDatasheet was not processed please search the internet for the part number for more details.\u003c\/p\u003e\u003cbr\u003e"}
