Enhance your electronic applications with the VISHAY SEMICONDUCTOR IRFZ20PBF Power MOSFET, a high-performance N-channel transistor designed for switching power supplies, motor controls, inverters, and other low voltage systems. Manufactured in China, this device offers reliable operation and excellent electrical characteristics.
Extremely low RDS(on) for efficient power switching
Compact plastic TO-220AB package for easy integration
Fast switching capabilities suitable for high-frequency applications
Low gate drive current for energy-efficient operation
Ease of paralleling multiple devices for higher current capacity
Excellent temperature stability ensuring reliable performance
Parts per million quality standards
Electrical Specifications
Parameter
Symbol
Limit
Unit
Drain-source voltage
VDS
50
V
Gate-source voltage
VGS
± 20
V
Continuous drain current at 25°C
ID
15
A
Continuous drain current at 100°C
10
A
Pulsed drain current
IDM
60
A
Maximum power dissipation
PD
40
W
Maximum junction and storage temperature
TJ, Tstg
-55 to +150
°C
Soldering peak temperature
300 (10 s)
°C
Thermal and Mechanical Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Junction-to-ambient thermal resistance
RθJA
-
80
°C/W
Case-to-sink thermal resistance
RθCS
1.0
-
°C/W
Junction-to-case thermal resistance
RθJC
-
3.12
°C/W
Additional Information
This Power MOSFET features a low RDS(on) of 0.10 Ω at VGS = 10 V, enabling efficient power switching with minimal energy loss. It supports high pulsed currents and operates reliably within a wide temperature range. The device is suitable for applications requiring fast switching, high efficiency, and thermal stability.
For more detailed specifications and application guidelines, please refer to the full datasheet.
Note: This datasheet provides information about parts that are RoHS-compliant and/or non RoHS-compliant. Please review the datasheet for specific compliance details.
{"id":10026344481085,"title":"IRFZ20PBF","handle":"irfz20pbf","description":"\u003ch3\u003eVISHAY SEMICONDUCTOR IRFZ20PBF Power MOSFET\u003c\/h3\u003e\n\u003cp\u003eEnhance your electronic applications with the VISHAY SEMICONDUCTOR IRFZ20PBF Power MOSFET, a high-performance N-channel transistor designed for switching power supplies, motor controls, inverters, and other low voltage systems. Manufactured in China, this device offers reliable operation and excellent electrical characteristics.\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003ePart Number:\u003c\/strong\u003e IRFZ20PBF\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eManufacturer:\u003c\/strong\u003e VISHAY SEMICONDUCTOR\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eUnit of Measure:\u003c\/strong\u003e EA\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePackage Type:\u003c\/strong\u003e TUBE\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eDatasheet:\u003c\/strong\u003e \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-irfz20pbf.pdf\" target=\"_blank\"\u003eIRFZ20PBF Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eKey Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eExtremely low R\u003csub\u003eDS(on)\u003c\/sub\u003e for efficient power switching\u003c\/li\u003e\n\u003cli\u003eCompact plastic TO-220AB package for easy integration\u003c\/li\u003e\n\u003cli\u003eFast switching capabilities suitable for high-frequency applications\u003c\/li\u003e\n\u003cli\u003eLow gate drive current for energy-efficient operation\u003c\/li\u003e\n\u003cli\u003eEase of paralleling multiple devices for higher current capacity\u003c\/li\u003e\n\u003cli\u003eExcellent temperature stability ensuring reliable performance\u003c\/li\u003e\n\u003cli\u003eParts per million quality standards\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eLimit\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e50\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e± 20\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current at 25°C\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e15\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current at 100°C\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e10\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePulsed drain current\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eDM\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e60\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e40\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction and storage temperature\u003c\/td\u003e\n\u003ctd\u003eT\u003csub\u003eJ, Tstg\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-55 to +150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSoldering peak temperature\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e300 (10 s)\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eThermal and Mechanical Characteristics\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eMin.\u003c\/th\u003e\n\u003cth\u003eTyp.\u003c\/th\u003e\n\u003cth\u003eMax.\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eJunction-to-ambient thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003eθJA\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e80\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCase-to-sink thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003eθCS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e1.0\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eJunction-to-case thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003eθJC\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e3.12\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eAdditional Information\u003c\/h3\u003e\n\u003cp\u003eThis Power MOSFET features a low R\u003csub\u003eDS(on)\u003c\/sub\u003e of 0.10 Ω at V\u003csub\u003eGS\u003c\/sub\u003e = 10 V, enabling efficient power switching with minimal energy loss. It supports high pulsed currents and operates reliably within a wide temperature range. The device is suitable for applications requiring fast switching, high efficiency, and thermal stability.\u003c\/p\u003e\n\u003cp\u003eFor more detailed specifications and application guidelines, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-irfz20pbf.pdf\" target=\"_blank\"\u003efull datasheet\u003c\/a\u003e.\u003c\/p\u003e\n\u003cp\u003e\u003cem\u003eNote: This datasheet provides information about parts that are RoHS-compliant and\/or non RoHS-compliant. Please review the datasheet for specific compliance details.\u003c\/em\u003e\u003c\/p\u003e","published_at":"2025-08-15T06:27:47+05:30","created_at":"2025-08-15T06:27:49+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["IMPORT_CSV","IMPORT_PT2","Mosfets","Semiconductors","VISHA-SEM","WLDM"],"price":8454,"price_min":8454,"price_max":8454,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50622100439357,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"IRFZ20PBF","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"IRFZ20PBF","public_title":null,"options":["Default Title"],"price":8454,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"IRFZ20PBF","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/IRFZ20PBF_44920319_0db48fa5.jpg?v=1755219469"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/IRFZ20PBF_44920319_0db48fa5.jpg?v=1755219469","options":["Title"],"media":[{"alt":null,"id":45847074013501,"position":1,"preview_image":{"aspect_ratio":1.0,"height":200,"width":200,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/IRFZ20PBF_44920319_0db48fa5.jpg?v=1755219469"},"aspect_ratio":1.0,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/IRFZ20PBF_44920319_0db48fa5.jpg?v=1755219469","width":200}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eVISHAY SEMICONDUCTOR IRFZ20PBF Power MOSFET\u003c\/h3\u003e\n\u003cp\u003eEnhance your electronic applications with the VISHAY SEMICONDUCTOR IRFZ20PBF Power MOSFET, a high-performance N-channel transistor designed for switching power supplies, motor controls, inverters, and other low voltage systems. Manufactured in China, this device offers reliable operation and excellent electrical characteristics.\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003ePart Number:\u003c\/strong\u003e IRFZ20PBF\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eManufacturer:\u003c\/strong\u003e VISHAY SEMICONDUCTOR\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eUnit of Measure:\u003c\/strong\u003e EA\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePackage Type:\u003c\/strong\u003e TUBE\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eDatasheet:\u003c\/strong\u003e \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-irfz20pbf.pdf\" target=\"_blank\"\u003eIRFZ20PBF Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eKey Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eExtremely low R\u003csub\u003eDS(on)\u003c\/sub\u003e for efficient power switching\u003c\/li\u003e\n\u003cli\u003eCompact plastic TO-220AB package for easy integration\u003c\/li\u003e\n\u003cli\u003eFast switching capabilities suitable for high-frequency applications\u003c\/li\u003e\n\u003cli\u003eLow gate drive current for energy-efficient operation\u003c\/li\u003e\n\u003cli\u003eEase of paralleling multiple devices for higher current capacity\u003c\/li\u003e\n\u003cli\u003eExcellent temperature stability ensuring reliable performance\u003c\/li\u003e\n\u003cli\u003eParts per million quality standards\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eLimit\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e50\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e± 20\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current at 25°C\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e15\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current at 100°C\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e10\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePulsed drain current\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eDM\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e60\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e40\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction and storage temperature\u003c\/td\u003e\n\u003ctd\u003eT\u003csub\u003eJ, Tstg\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-55 to +150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSoldering peak temperature\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e300 (10 s)\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eThermal and Mechanical Characteristics\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eMin.\u003c\/th\u003e\n\u003cth\u003eTyp.\u003c\/th\u003e\n\u003cth\u003eMax.\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eJunction-to-ambient thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003eθJA\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e80\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCase-to-sink thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003eθCS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e1.0\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eJunction-to-case thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003eθJC\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e3.12\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eAdditional Information\u003c\/h3\u003e\n\u003cp\u003eThis Power MOSFET features a low R\u003csub\u003eDS(on)\u003c\/sub\u003e of 0.10 Ω at V\u003csub\u003eGS\u003c\/sub\u003e = 10 V, enabling efficient power switching with minimal energy loss. It supports high pulsed currents and operates reliably within a wide temperature range. The device is suitable for applications requiring fast switching, high efficiency, and thermal stability.\u003c\/p\u003e\n\u003cp\u003eFor more detailed specifications and application guidelines, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-irfz20pbf.pdf\" target=\"_blank\"\u003efull datasheet\u003c\/a\u003e.\u003c\/p\u003e\n\u003cp\u003e\u003cem\u003eNote: This datasheet provides information about parts that are RoHS-compliant and\/or non RoHS-compliant. Please review the datasheet for specific compliance details.\u003c\/em\u003e\u003c\/p\u003e"}
