VISHAY SEMICONDUCTOR IRLZ44PBF N-Channel Power MOSFET
The IRLZ44PBF from Vishay Semiconductor is a high-performance N-Channel Power MOSFET designed for demanding industrial and commercial applications. Manufactured in China, this device offers reliable switching capabilities with a maximum drain-source voltage of 60V and a continuous drain current of 50A at 25°C. Its TO-220AB package ensures excellent thermal management and ease of mounting.
Key Features
Dynamic dV/dt rating for fast switching
Logic-level gate drive compatible
RDS(on) specified at VGS = 4V and 5V
Operating temperature up to 175°C
Low on-resistance for efficient power conduction
Ease of paralleling for higher current applications
Simple drive requirements for ease of integration
Electrical Specifications
Parameter
Symbol
Min.
Typ.
Max.
Unit
Drain-source voltage
VDS
-
-
60
V
Gate-source voltage
VGS
±10
-
-
V
Continuous drain current at 25°C
ID
-
-
50
A
Continuous drain current at 100°C
-
-
-
36
A
Pulsed drain current
IDM
-
-
200
A
Maximum power dissipation
PD
-
-
150
W
Maximum junction temperature
TJ
-55
+175
°C
Thermal and Mechanical Details
Package Type: TO-220AB
Lead (Pb)-free: IRLZ44PbF
Lead (Pb)-free and halogen-free: IRLZ44PbF-BE3
Maximum junction-to-ambient thermal resistance: 62°C/W
Case-to-sink thermal resistance: 0.50°C/W
Soldering peak temperature: 300°C for 10 seconds
Mounting torque: 10 lbf·in (1.1 N·m)
Additional Information
This third-generation power MOSFET from Vishay Siliconix combines fast switching, rugged design, low on-resistance, and cost-effectiveness. It is suitable for various power switching applications, including industrial drives, power supplies, and motor controls.
For detailed technical information, please refer to the datasheet.
Part Number: IRLZ44PBF | Manufacturer: VISHAY SEMICONDUCTOR | COO: CN | UOM: EA | ECCN: EAR99 | Package Type: TUBE
Note: Datasheet was not processed please search the internet for the part number for more details.
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Its TO-220AB package ensures excellent thermal management and ease of mounting.\u003c\/p\u003e\n\u003ch3\u003eKey Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eDynamic dV\/dt rating for fast switching\u003c\/li\u003e\n\u003cli\u003eLogic-level gate drive compatible\u003c\/li\u003e\n\u003cli\u003eR\u003csub\u003eDS(on)\u003c\/sub\u003e specified at V\u003csub\u003eGS\u003c\/sub\u003e = 4V and 5V\u003c\/li\u003e\n\u003cli\u003eOperating temperature up to 175°C\u003c\/li\u003e\n\u003cli\u003eLow on-resistance for efficient power conduction\u003c\/li\u003e\n\u003cli\u003eEase of paralleling for higher current applications\u003c\/li\u003e\n\u003cli\u003eSimple drive requirements for ease of integration\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eMin.\u003c\/th\u003e\n\u003cth\u003eTyp.\u003c\/th\u003e\n\u003cth\u003eMax.\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e60\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e±10\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current at 25°C\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e50\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current at 100°C\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e36\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePulsed drain current\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eDM\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e200\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e150\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction temperature\u003c\/td\u003e\n\u003ctd\u003eT\u003csub\u003eJ\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-55\u003c\/td\u003e\n\u003ctd\u003e+175\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eThermal and Mechanical Details\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003ePackage Type: TO-220AB\u003c\/li\u003e\n\u003cli\u003eLead (Pb)-free: IRLZ44PbF\u003c\/li\u003e\n\u003cli\u003eLead (Pb)-free and halogen-free: IRLZ44PbF-BE3\u003c\/li\u003e\n\u003cli\u003eMaximum junction-to-ambient thermal resistance: 62°C\/W\u003c\/li\u003e\n\u003cli\u003eCase-to-sink thermal resistance: 0.50°C\/W\u003c\/li\u003e\n\u003cli\u003eSoldering peak temperature: 300°C for 10 seconds\u003c\/li\u003e\n\u003cli\u003eMounting torque: 10 lbf·in (1.1 N·m)\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eAdditional Information\u003c\/h3\u003e\n\u003cp\u003eThis third-generation power MOSFET from Vishay Siliconix combines fast switching, rugged design, low on-resistance, and cost-effectiveness. It is suitable for various power switching applications, including industrial drives, power supplies, and motor controls.\u003c\/p\u003e\n\u003cp\u003eFor detailed technical information, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-irlz44pbf.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e.\u003c\/p\u003e\n\u003cp\u003ePart Number: IRLZ44PBF | Manufacturer: VISHAY SEMICONDUCTOR | COO: CN | UOM: EA | ECCN: EAR99 | Package Type: TUBE\u003c\/p\u003e\n\u003cp\u003eNote: Datasheet was not processed please search the internet for the part number for more details.\u003c\/p\u003e","published_at":"2025-08-13T10:15:42+05:30","created_at":"2025-08-13T10:15:42+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["50A","60V","CH","IMPORT_CSV","Mosfets","Semiconductors","VISHA-SEM","WLDM"],"price":16077,"price_min":16077,"price_max":16077,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50614638838077,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"IRLZ44PBF","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"IRLZ44PBF","public_title":null,"options":["Default Title"],"price":16077,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"IRLZ44PBF","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/IRLZ44PBF_44922897_efd2b9da.jpg?v=1755060346"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/IRLZ44PBF_44922897_efd2b9da.jpg?v=1755060346","options":["Title"],"media":[{"alt":null,"id":45813775008061,"position":1,"preview_image":{"aspect_ratio":1.0,"height":200,"width":200,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/IRLZ44PBF_44922897_efd2b9da.jpg?v=1755060346"},"aspect_ratio":1.0,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/IRLZ44PBF_44922897_efd2b9da.jpg?v=1755060346","width":200}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eVISHAY SEMICONDUCTOR IRLZ44PBF N-Channel Power MOSFET\u003c\/h3\u003e\n\u003cp\u003eThe IRLZ44PBF from Vishay Semiconductor is a high-performance N-Channel Power MOSFET designed for demanding industrial and commercial applications. Manufactured in China, this device offers reliable switching capabilities with a maximum drain-source voltage of 60V and a continuous drain current of 50A at 25°C. Its TO-220AB package ensures excellent thermal management and ease of mounting.\u003c\/p\u003e\n\u003ch3\u003eKey Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eDynamic dV\/dt rating for fast switching\u003c\/li\u003e\n\u003cli\u003eLogic-level gate drive compatible\u003c\/li\u003e\n\u003cli\u003eR\u003csub\u003eDS(on)\u003c\/sub\u003e specified at V\u003csub\u003eGS\u003c\/sub\u003e = 4V and 5V\u003c\/li\u003e\n\u003cli\u003eOperating temperature up to 175°C\u003c\/li\u003e\n\u003cli\u003eLow on-resistance for efficient power conduction\u003c\/li\u003e\n\u003cli\u003eEase of paralleling for higher current applications\u003c\/li\u003e\n\u003cli\u003eSimple drive requirements for ease of integration\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eMin.\u003c\/th\u003e\n\u003cth\u003eTyp.\u003c\/th\u003e\n\u003cth\u003eMax.\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e60\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e±10\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current at 25°C\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e50\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current at 100°C\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e36\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePulsed drain current\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eDM\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e200\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e150\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction temperature\u003c\/td\u003e\n\u003ctd\u003eT\u003csub\u003eJ\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-55\u003c\/td\u003e\n\u003ctd\u003e+175\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eThermal and Mechanical Details\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003ePackage Type: TO-220AB\u003c\/li\u003e\n\u003cli\u003eLead (Pb)-free: IRLZ44PbF\u003c\/li\u003e\n\u003cli\u003eLead (Pb)-free and halogen-free: IRLZ44PbF-BE3\u003c\/li\u003e\n\u003cli\u003eMaximum junction-to-ambient thermal resistance: 62°C\/W\u003c\/li\u003e\n\u003cli\u003eCase-to-sink thermal resistance: 0.50°C\/W\u003c\/li\u003e\n\u003cli\u003eSoldering peak temperature: 300°C for 10 seconds\u003c\/li\u003e\n\u003cli\u003eMounting torque: 10 lbf·in (1.1 N·m)\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eAdditional Information\u003c\/h3\u003e\n\u003cp\u003eThis third-generation power MOSFET from Vishay Siliconix combines fast switching, rugged design, low on-resistance, and cost-effectiveness. It is suitable for various power switching applications, including industrial drives, power supplies, and motor controls.\u003c\/p\u003e\n\u003cp\u003eFor detailed technical information, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-irlz44pbf.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e.\u003c\/p\u003e\n\u003cp\u003ePart Number: IRLZ44PBF | Manufacturer: VISHAY SEMICONDUCTOR | COO: CN | UOM: EA | ECCN: EAR99 | Package Type: TUBE\u003c\/p\u003e\n\u003cp\u003eNote: Datasheet was not processed please search the internet for the part number for more details.\u003c\/p\u003e"}
