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SI1400DL-T1-GE3

SKU: SI1400DL-T1-GE3

Regular price ₹ 17.88
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VISHAY SI1400DL Small Signal Field-Effect Transistor

The VISHAY SI1400DL is a high-performance N-Channel 20 V (D-S) MOSFET designed for various electronic applications. Manufactured in China, this semiconductor offers reliable switching characteristics and low on-resistance, making it suitable for power management, switching regulators, and load switching circuits.

Product Details:

  • Part Number: SI1400DL-T1-GE3
  • Manufacturer: VISHAY
  • Country of Origin: CN
  • Package Type: REEL
  • UOM: Not specified
  • ECCN: EAR99
  • RoHS Compliant: Yes
  • Datasheet: Download Datasheet

Key Features:

  • TrenchFET Power MOSFET technology with 2.5 V rated gate threshold voltage
  • Halogen-free according to IEC 61249-2-21
  • RoHS compliant for environmentally friendly applications
  • High current handling capability with continuous drain current of 1.7 A at 25°C
  • Low on-resistance: 0.150 Ω at VGS = 4.5 V and 0.235 Ω at VGS = 2.5 V
  • Maximum drain-source voltage of 20 V
  • Gate-Source voltage rating of ±12 V
  • Package: SOT-363 (SC-70, 6-lead) in reel packaging for automated assembly

Electrical Specifications:

Parameter Symbol Min. Typ. Max. Unit
Drain-Source Voltage VDS - - 20 V
Gate-Source Voltage VGS - ±12 - V
Continuous Drain Current ID 1.6 1.7 - A
Maximum Power Dissipation PD 0.568 - - W
Operating Junction Temperature Range TJ -55 150 - °C

Thermal Resistance:

Parameter Symbol Typical Maximum Unit
Junction-to-Ambient RthJA 165 200 °C/W
Junction-to-Foot (Drain) RthJF 105 130 °C/W

For more detailed specifications, please refer to the datasheet.

Note: Datasheet was not processed please search the internet for the part number for more details.


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