VISHAY SEMICONDUCTOR SI3493BDV-T1-GE3 Small Signal P-Channel MOSFET
Introducing the VISHAY SEMICONDUCTOR SI3493BDV, a high-performance P-Channel 20V (D-S) MOSFET designed for efficient load switching applications. Manufactured in China, this device is available in a reel package for streamlined automated assembly.
{"id":10026551542077,"title":"SI3493BDV-T1-GE3","handle":"si3493bdv-t1-ge3","description":"\u003ch3\u003eVISHAY SEMICONDUCTOR SI3493BDV-T1-GE3 Small Signal P-Channel MOSFET\u003c\/h3\u003e\n\u003cp\u003eIntroducing the VISHAY SEMICONDUCTOR SI3493BDV, a high-performance P-Channel 20V (D-S) MOSFET designed for efficient load switching applications. Manufactured in China, this device is available in a reel package for streamlined automated assembly.\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003eProduct Details:\u003c\/strong\u003e Part Number: SI3493BDV-T1-GE3\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eManufacturer:\u003c\/strong\u003e VISHAY SEMICONDUCTOR\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eUnit of Measure:\u003c\/strong\u003e EA\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePackage Type:\u003c\/strong\u003e REEL\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eDatasheet:\u003c\/strong\u003e \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-si3493bdv-t1-ge3.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eKey Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eHalogen-free according to IEC 61249-2-21\u003c\/li\u003e\n\u003cli\u003eTrenchFET® Power MOSFET technology for low on-resistance\u003c\/li\u003e\n\u003cli\u003ePWM optimized for efficient switching\u003c\/li\u003e\n\u003cli\u003e100% R-tested for quality assurance\u003c\/li\u003e\n\u003cli\u003eSuitable for load switch applications\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical Characteristics\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\"\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eLimit\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-20\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e±8.0\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous Drain Current (T=25°C)\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-7.0\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Power Dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e2.97\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating Junction Temperature Range\u003c\/td\u003e\n\u003ctd\u003eT\u003csub\u003eJ\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-55 to 150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003cth colspan=\"4\"\u003eThermal Resistance Ratings\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eJunction-to-Ambient (steady state)\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJA\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e50\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eJunction-to-Foot (Drain)\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJF\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e35\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eAbsolute Maximum Ratings\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\"\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eLimit\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-20\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e±8.0\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous Drain Current\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-8.0\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePulsed Drain Current\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eDM\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-25\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Power Dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e2.97\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating Junction Temperature Range\u003c\/td\u003e\n\u003ctd\u003eT\u003csub\u003eJ\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-55 to 150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eAdditional Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eLow R\u003csub\u003eDS(on)\u003c\/sub\u003e characteristics for efficient conduction\u003c\/li\u003e\n\u003cli\u003eBody diode with forward voltage of approximately 0.8 to 1.2V\u003c\/li\u003e\n\u003cli\u003eSuitable for load switching, PWM, and general electronic switching applications\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003eFor detailed electrical characteristics and application information, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-si3493bdv-t1-ge3.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e.\u003c\/p\u003e\n\u003cp\u003eNote: The datasheet was not processed; please search the internet for the part number SI3493BDV for more details.\u003c\/p\u003e","published_at":"2025-08-15T11:00:52+05:30","created_at":"2025-08-15T11:00:54+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["8A","IMPORT_CSV","IMPORT_PT2","Mosfets","Semiconductors","VISHA-SEM","WLDM"],"price":6930,"price_min":6930,"price_max":6930,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50622538842429,"title":"Default Title","option1":"Default 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Title"],"price":6930,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"SI3493BDV-T1-GE3","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/SI3493BDV-T1-GE3_55983240_c55fdff4.jpg?v=1755235854"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SI3493BDV-T1-GE3_55983240_c55fdff4.jpg?v=1755235854","options":["Title"],"media":[{"alt":null,"id":45849475547453,"position":1,"preview_image":{"aspect_ratio":1.0,"height":200,"width":200,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SI3493BDV-T1-GE3_55983240_c55fdff4.jpg?v=1755235854"},"aspect_ratio":1.0,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SI3493BDV-T1-GE3_55983240_c55fdff4.jpg?v=1755235854","width":200}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eVISHAY SEMICONDUCTOR SI3493BDV-T1-GE3 Small Signal P-Channel MOSFET\u003c\/h3\u003e\n\u003cp\u003eIntroducing the VISHAY SEMICONDUCTOR SI3493BDV, a high-performance P-Channel 20V (D-S) MOSFET designed for efficient load switching applications. Manufactured in China, this device is available in a reel package for streamlined automated assembly.\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003eProduct Details:\u003c\/strong\u003e Part Number: SI3493BDV-T1-GE3\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eManufacturer:\u003c\/strong\u003e VISHAY SEMICONDUCTOR\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eUnit of Measure:\u003c\/strong\u003e EA\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePackage Type:\u003c\/strong\u003e REEL\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eDatasheet:\u003c\/strong\u003e \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-si3493bdv-t1-ge3.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eKey Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eHalogen-free according to IEC 61249-2-21\u003c\/li\u003e\n\u003cli\u003eTrenchFET® Power MOSFET technology for low on-resistance\u003c\/li\u003e\n\u003cli\u003ePWM optimized for efficient switching\u003c\/li\u003e\n\u003cli\u003e100% R-tested for quality assurance\u003c\/li\u003e\n\u003cli\u003eSuitable for load switch applications\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical Characteristics\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\"\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eLimit\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-20\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e±8.0\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous Drain Current (T=25°C)\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-7.0\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Power Dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e2.97\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating Junction Temperature Range\u003c\/td\u003e\n\u003ctd\u003eT\u003csub\u003eJ\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-55 to 150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003cth colspan=\"4\"\u003eThermal Resistance Ratings\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eJunction-to-Ambient (steady state)\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJA\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e50\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eJunction-to-Foot (Drain)\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJF\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e35\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eAbsolute Maximum Ratings\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\"\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eLimit\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-20\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e±8.0\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous Drain Current\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-8.0\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePulsed Drain Current\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eDM\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-25\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Power Dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e2.97\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating Junction Temperature Range\u003c\/td\u003e\n\u003ctd\u003eT\u003csub\u003eJ\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-55 to 150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eAdditional Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eLow R\u003csub\u003eDS(on)\u003c\/sub\u003e characteristics for efficient conduction\u003c\/li\u003e\n\u003cli\u003eBody diode with forward voltage of approximately 0.8 to 1.2V\u003c\/li\u003e\n\u003cli\u003eSuitable for load switching, PWM, and general electronic switching applications\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003eFor detailed electrical characteristics and application information, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-si3493bdv-t1-ge3.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e.\u003c\/p\u003e\n\u003cp\u003eNote: The datasheet was not processed; please search the internet for the part number SI3493BDV for more details.\u003c\/p\u003e"}
