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SI7190ADP-T1-RE3

SKU: SI7190ADP-T1-RE3

Regular price ₹ 163.54
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VISHAY SI7190ADP-T1-RE3 Power Field-Effect Transistor

The VISHAY SI7190ADP-T1-RE3 is a high-performance N-Channel Power MOSFET designed for demanding electronic applications. Manufactured in China, this semiconductor offers reliable switching and power management capabilities suitable for various industrial and consumer electronics.

  • Part Number: SI7190ADP-T1-RE3
  • Manufacturer: VISHAY
  • Country of Origin: CN
  • Product Type: Semiconductors
  • Product Category: Semiconductors | MOSFETs
  • Package Type: REEL (PowerPAK SO-8)
  • UOM: EA
  • ECCN: EAR99
  • RoHS Compliant: Yes
  • Datasheet: Download Datasheet

Key Features

  • TrenchFET power MOSFET technology for efficient switching
  • Low thermal resistance PowerPAK package for improved heat dissipation
  • 100% Rg and UIS tested for quality assurance
  • Maximum drain-source voltage (VDS): 250 V
  • Low RDS(on): 0.102 Ω at VGS = 10 V, 0.110 Ω at VGS = 7.5 V
  • Continuous drain current (ID): 14.4 A at 25°C
  • Pulsed drain current (IDM): 30 A
  • Maximum power dissipation: 56.8 W at 25°C
  • Operating junction and storage temperature range: -55°C to +150°C

Electrical Specifications

Parameter Symbol Limit Unit
Drain-source voltage VDS 250 V
Gate-source voltage VGS ±20 V
Continuous drain current (25°C) ID 14.4 A
Maximum power dissipation PD 56.8 W
Operating junction temperature TJ -55 to +150 °C

Thermal and Mechanical Characteristics

Parameter Symbol Typical Maximum Unit
Maximum junction-to-ambient thermal resistance RθJA 20 25 °C/W
Maximum junction-to-case (drain) thermal resistance RθJC 1.7 2.2

Applications

  • Primary side switch
  • Synchronous rectification
  • DC/DC converters
  • Lighting
  • Industrial equipment

For more detailed technical information, please refer to the datasheet. The datasheet was not processed; please search the internet for the part number for more details.

Disclaimers and additional product information are available in the datasheet.


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