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VISHAY
SIAA00DJ-T1-GE3
VISHAY Power Field-Effect Transistor (PRC: VIS)
Part Number: SIAA00DJ-T1-GE3Download Datasheet
Product Overview
The VISHAY SiAA00DJ is an N-Channel 25 V (D-S) MOSFET designed for high-performance power management applications. It features advanced trenchFET technology, optimized for high-frequency switching and low power loss, making it suitable for a variety of power conversion and load switching applications.
Key Features
PowerPAK SC-70-6L Single package for compact design
TrenchFET [®] Gen IV power MOSFET technology
Optimized Qg, Qgd, and Qgs ratios to reduce switching power loss
Very low Rds(on) and excellent Rds(on)·Qg Figure-of-Merit (FOM)
Designed for high-frequency switching applications
100% Rg and UIS tested for reliability
RoHS compliant
Applications
Synchronous rectification
High power density DC/DC converters
Synchronous buck converters
Load switching
Battery charging and management
Electrical Specifications
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Drain-source breakdown voltage
VDS
VGS = 0 V, ID = 250 μA
-
-
25
V
Gate-source threshold voltage
VGS(th)
VDS = VGS, ID = 250 μA
1
-
2.5
V
On-state drain current
ID(on)
VDS ≥ 10 V, VGS = 10 V
-
40
-
A
Maximum Rds(on) at VGS = 10 V
Rds(on)
-
-
0.0056
-
Ω
Maximum Rds(on) at VGS = 4.5 V
Rds(on)
-
-
0.0075
-
Ω
Drain-source voltage
VDS
Continuous
-
-
25
V
Continuous drain current
ID
TA = 25°C
-
20.1
-
A
Absolute Maximum Ratings
Parameter
Symbol
Limit
Unit
Drain-source voltage
VDS
25
V
Gate-source voltage
VGS
+16 / -12
V
Continuous drain current (TJ = 150°C)
ID
40 A
A
Maximum power dissipation
PD
19.2 W
W
Operating junction and storage temperature range
TJ, Tstg
-55 to +150
°C
Thermal Resistance Ratings
Parameter
Symbol
Typical
Maximum
Unit
Maximum junction-to-ambient
RthJA
28
36
°C/W
Maximum junction-to-case (drain)
RthJC
5.3
6.5
Notes
Package limited
Surface mounted on 1" x 1" FR4 board
Soldering peak temperature: 260°C
Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
Material categorization: for compliance details, visit VISHAY documentation
For more detailed specifications, please refer to the datasheet . Datasheet was not processed, please search the internet for the part number for more details.
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{"id":10023231684925,"title":"SIAA00DJ-T1-GE3","handle":"siaa00dj-t1-ge3","description":"\u003ch3\u003eVISHAY Power Field-Effect Transistor (PRC: VIS)\u003c\/h3\u003e\n\u003cp\u003ePart Number: SIAA00DJ-T1-GE3\u003cbr\u003e\nManufacturer: VISHAY\u003cbr\u003e\nCountry of Origin: CN\u003cbr\u003e\nUnit of Measure: EA\u003cbr\u003e\nECCN: EAR99\u003cbr\u003e\nPackage Type: REEL\u003cbr\u003e\nDatasheet: \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-vis\/vis-siaa00dj-t1-ge3.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\u003c\/p\u003e\n\n\u003ch3\u003eProduct Overview\u003c\/h3\u003e\n\u003cp\u003eThe VISHAY SiAA00DJ is an N-Channel 25 V (D-S) MOSFET designed for high-performance power management applications. It features advanced trenchFET technology, optimized for high-frequency switching and low power loss, making it suitable for a variety of power conversion and load switching applications.\u003c\/p\u003e\n\n\u003ch3\u003eKey Features\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003ePowerPAK SC-70-6L Single package for compact design\u003c\/li\u003e\n \u003cli\u003eTrenchFET [®] Gen IV power MOSFET technology\u003c\/li\u003e\n \u003cli\u003eOptimized Qg, Qgd, and Qgs ratios to reduce switching power loss\u003c\/li\u003e\n \u003cli\u003eVery low Rds(on) and excellent Rds(on)·Qg Figure-of-Merit (FOM)\u003c\/li\u003e\n \u003cli\u003eDesigned for high-frequency switching applications\u003c\/li\u003e\n \u003cli\u003e100% Rg and UIS tested for reliability\u003c\/li\u003e\n \u003cli\u003eRoHS compliant\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003ch3\u003eApplications\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003eSynchronous rectification\u003c\/li\u003e\n \u003cli\u003eHigh power density DC\/DC converters\u003c\/li\u003e\n \u003cli\u003eSynchronous buck converters\u003c\/li\u003e\n \u003cli\u003eLoad switching\u003c\/li\u003e\n \u003cli\u003eBattery charging and management\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003ch3\u003eElectrical Specifications\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"4\" cellspacing=\"0\"\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eConditions\u003c\/th\u003e\n \u003cth\u003eMin.\u003c\/th\u003e\n \u003cth\u003eTyp.\u003c\/th\u003e\n \u003cth\u003eMax.\u003c\/th\u003e\n \u003cth\u003eUnit\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-source breakdown voltage\u003c\/td\u003e\n \u003ctd\u003eVDS\u003c\/td\u003e\n \u003ctd\u003eVGS = 0 V, ID = 250 μA\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e25\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate-source threshold voltage\u003c\/td\u003e\n \u003ctd\u003eVGS(th)\u003c\/td\u003e\n \u003ctd\u003eVDS = VGS, ID = 250 μA\u003c\/td\u003e\n \u003ctd\u003e1\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e2.5\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eOn-state drain current\u003c\/td\u003e\n \u003ctd\u003eID(on)\u003c\/td\u003e\n \u003ctd\u003eVDS ≥ 10 V, VGS = 10 V\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e40\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003eA\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum Rds(on) at VGS = 10 V\u003c\/td\u003e\n \u003ctd\u003eRds(on)\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e0.0056\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003eΩ\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum Rds(on) at VGS = 4.5 V\u003c\/td\u003e\n \u003ctd\u003eRds(on)\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e0.0075\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003eΩ\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n \u003ctd\u003eVDS\u003c\/td\u003e\n \u003ctd\u003eContinuous\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e25\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eContinuous drain current\u003c\/td\u003e\n \u003ctd\u003eID\u003c\/td\u003e\n \u003ctd\u003eTA = 25°C\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e20.1\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003eA\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eAbsolute Maximum Ratings\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"4\" cellspacing=\"0\"\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eLimit\u003c\/th\u003e\n \u003cth\u003eUnit\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n \u003ctd\u003eVDS\u003c\/td\u003e\n \u003ctd\u003e25\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate-source voltage\u003c\/td\u003e\n \u003ctd\u003eVGS\u003c\/td\u003e\n \u003ctd\u003e+16 \/ -12\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eContinuous drain current (TJ = 150°C)\u003c\/td\u003e\n \u003ctd\u003eID\u003c\/td\u003e\n \u003ctd\u003e40 A\u003c\/td\u003e\n \u003ctd\u003eA\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n \u003ctd\u003ePD\u003c\/td\u003e\n \u003ctd\u003e19.2 W\u003c\/td\u003e\n \u003ctd\u003eW\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eOperating junction and storage temperature range\u003c\/td\u003e\n \u003ctd\u003eTJ, Tstg\u003c\/td\u003e\n \u003ctd\u003e-55 to +150\u003c\/td\u003e\n \u003ctd\u003e°C\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eThermal Resistance Ratings\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"4\" cellspacing=\"0\"\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eTypical\u003c\/th\u003e\n \u003cth\u003eMaximum\u003c\/th\u003e\n \u003cth\u003eUnit\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum junction-to-ambient\u003c\/td\u003e\n \u003ctd\u003eRthJA\u003c\/td\u003e\n \u003ctd\u003e28\u003c\/td\u003e\n \u003ctd\u003e36\u003c\/td\u003e\n \u003ctd\u003e°C\/W\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum junction-to-case (drain)\u003c\/td\u003e\n \u003ctd\u003eRthJC\u003c\/td\u003e\n \u003ctd\u003e5.3\u003c\/td\u003e\n \u003ctd\u003e6.5\u003c\/td\u003e\n \u003ctd\u003e\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eNotes\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003ePackage limited\u003c\/li\u003e\n \u003cli\u003eSurface mounted on 1\" x 1\" FR4 board\u003c\/li\u003e\n \u003cli\u003eSoldering peak temperature: 260°C\u003c\/li\u003e\n \u003cli\u003eRework conditions: manual soldering with a soldering iron is not recommended for leadless components\u003c\/li\u003e\n \u003cli\u003eMaterial categorization: for compliance details, visit \u003ca href=\"http:\/\/www.vishay.com\/doc?99912\" target=\"_blank\"\u003eVISHAY documentation\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003cp\u003eFor more detailed specifications, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-vis\/vis-siaa00dj-t1-ge3.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e. Datasheet was not processed, please search the internet for the part number for more details.\u003c\/p\u003e\u003cbr\u003e","published_at":"2025-08-13T20:47:30+05:30","created_at":"2025-08-13T20:47:30+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["IMPORT_CSV","Mosfets","Power","Semiconductors","VISHA-X","WLDM"],"price":4989,"price_min":4989,"price_max":4989,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50616064475453,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"SIAA00DJ-T1-GE3","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"SIAA00DJ-T1-GE3","public_title":null,"options":["Default Title"],"price":4989,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"SIAA00DJ-T1-GE3","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/SIAA00DJ-T1-GE3_55983900_1c5e3aa7.jpg?v=1755098254"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIAA00DJ-T1-GE3_55983900_1c5e3aa7.jpg?v=1755098254","options":["Title"],"media":[{"alt":null,"id":45821520740669,"position":1,"preview_image":{"aspect_ratio":1.0,"height":200,"width":200,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIAA00DJ-T1-GE3_55983900_1c5e3aa7.jpg?v=1755098254"},"aspect_ratio":1.0,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIAA00DJ-T1-GE3_55983900_1c5e3aa7.jpg?v=1755098254","width":200}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eVISHAY Power Field-Effect Transistor (PRC: VIS)\u003c\/h3\u003e\n\u003cp\u003ePart Number: SIAA00DJ-T1-GE3\u003cbr\u003e\nManufacturer: VISHAY\u003cbr\u003e\nCountry of Origin: CN\u003cbr\u003e\nUnit of Measure: EA\u003cbr\u003e\nECCN: EAR99\u003cbr\u003e\nPackage Type: REEL\u003cbr\u003e\nDatasheet: \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-vis\/vis-siaa00dj-t1-ge3.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\u003c\/p\u003e\n\n\u003ch3\u003eProduct Overview\u003c\/h3\u003e\n\u003cp\u003eThe VISHAY SiAA00DJ is an N-Channel 25 V (D-S) MOSFET designed for high-performance power management applications. It features advanced trenchFET technology, optimized for high-frequency switching and low power loss, making it suitable for a variety of power conversion and load switching applications.\u003c\/p\u003e\n\n\u003ch3\u003eKey Features\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003ePowerPAK SC-70-6L Single package for compact design\u003c\/li\u003e\n \u003cli\u003eTrenchFET [®] Gen IV power MOSFET technology\u003c\/li\u003e\n \u003cli\u003eOptimized Qg, Qgd, and Qgs ratios to reduce switching power loss\u003c\/li\u003e\n \u003cli\u003eVery low Rds(on) and excellent Rds(on)·Qg Figure-of-Merit (FOM)\u003c\/li\u003e\n \u003cli\u003eDesigned for high-frequency switching applications\u003c\/li\u003e\n \u003cli\u003e100% Rg and UIS tested for reliability\u003c\/li\u003e\n \u003cli\u003eRoHS compliant\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003ch3\u003eApplications\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003eSynchronous rectification\u003c\/li\u003e\n \u003cli\u003eHigh power density DC\/DC converters\u003c\/li\u003e\n \u003cli\u003eSynchronous buck converters\u003c\/li\u003e\n \u003cli\u003eLoad switching\u003c\/li\u003e\n \u003cli\u003eBattery charging and management\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003ch3\u003eElectrical Specifications\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"4\" cellspacing=\"0\"\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eConditions\u003c\/th\u003e\n \u003cth\u003eMin.\u003c\/th\u003e\n \u003cth\u003eTyp.\u003c\/th\u003e\n \u003cth\u003eMax.\u003c\/th\u003e\n \u003cth\u003eUnit\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-source breakdown voltage\u003c\/td\u003e\n \u003ctd\u003eVDS\u003c\/td\u003e\n \u003ctd\u003eVGS = 0 V, ID = 250 μA\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e25\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate-source threshold voltage\u003c\/td\u003e\n \u003ctd\u003eVGS(th)\u003c\/td\u003e\n \u003ctd\u003eVDS = VGS, ID = 250 μA\u003c\/td\u003e\n \u003ctd\u003e1\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e2.5\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eOn-state drain current\u003c\/td\u003e\n \u003ctd\u003eID(on)\u003c\/td\u003e\n \u003ctd\u003eVDS ≥ 10 V, VGS = 10 V\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e40\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003eA\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum Rds(on) at VGS = 10 V\u003c\/td\u003e\n \u003ctd\u003eRds(on)\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e0.0056\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003eΩ\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum Rds(on) at VGS = 4.5 V\u003c\/td\u003e\n \u003ctd\u003eRds(on)\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e0.0075\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003eΩ\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n \u003ctd\u003eVDS\u003c\/td\u003e\n \u003ctd\u003eContinuous\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e25\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eContinuous drain current\u003c\/td\u003e\n \u003ctd\u003eID\u003c\/td\u003e\n \u003ctd\u003eTA = 25°C\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e20.1\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003eA\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eAbsolute Maximum Ratings\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"4\" cellspacing=\"0\"\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eLimit\u003c\/th\u003e\n \u003cth\u003eUnit\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n \u003ctd\u003eVDS\u003c\/td\u003e\n \u003ctd\u003e25\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate-source voltage\u003c\/td\u003e\n \u003ctd\u003eVGS\u003c\/td\u003e\n \u003ctd\u003e+16 \/ -12\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eContinuous drain current (TJ = 150°C)\u003c\/td\u003e\n \u003ctd\u003eID\u003c\/td\u003e\n \u003ctd\u003e40 A\u003c\/td\u003e\n \u003ctd\u003eA\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n \u003ctd\u003ePD\u003c\/td\u003e\n \u003ctd\u003e19.2 W\u003c\/td\u003e\n \u003ctd\u003eW\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eOperating junction and storage temperature range\u003c\/td\u003e\n \u003ctd\u003eTJ, Tstg\u003c\/td\u003e\n \u003ctd\u003e-55 to +150\u003c\/td\u003e\n \u003ctd\u003e°C\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eThermal Resistance Ratings\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"4\" cellspacing=\"0\"\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eTypical\u003c\/th\u003e\n \u003cth\u003eMaximum\u003c\/th\u003e\n \u003cth\u003eUnit\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum junction-to-ambient\u003c\/td\u003e\n \u003ctd\u003eRthJA\u003c\/td\u003e\n \u003ctd\u003e28\u003c\/td\u003e\n \u003ctd\u003e36\u003c\/td\u003e\n \u003ctd\u003e°C\/W\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum junction-to-case (drain)\u003c\/td\u003e\n \u003ctd\u003eRthJC\u003c\/td\u003e\n \u003ctd\u003e5.3\u003c\/td\u003e\n \u003ctd\u003e6.5\u003c\/td\u003e\n \u003ctd\u003e\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eNotes\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003ePackage limited\u003c\/li\u003e\n \u003cli\u003eSurface mounted on 1\" x 1\" FR4 board\u003c\/li\u003e\n \u003cli\u003eSoldering peak temperature: 260°C\u003c\/li\u003e\n \u003cli\u003eRework conditions: manual soldering with a soldering iron is not recommended for leadless components\u003c\/li\u003e\n \u003cli\u003eMaterial categorization: for compliance details, visit \u003ca href=\"http:\/\/www.vishay.com\/doc?99912\" target=\"_blank\"\u003eVISHAY documentation\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003cp\u003eFor more detailed specifications, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-vis\/vis-siaa00dj-t1-ge3.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e. Datasheet was not processed, please search the internet for the part number for more details.\u003c\/p\u003e\u003cbr\u003e"}
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