VISHAY SEMICONDUCTOR Power Field-Effect Transistor SIHA22N60E-E3
Introducing the VISHAY SEMICONDUCTOR SIHA22N60E-E3, a high-performance N-channel power MOSFET designed for demanding electronic applications. Manufactured in China, this device offers robust electrical characteristics suitable for switch mode power supplies, power factor correction, lighting, consumer electronics, and computing power supplies.
Product Features:
Low figure-of-merit (FOM) Ron x Qg
Low input capacitance (Ciss) for efficient switching
Reduced switching and conduction losses
Ultra low gate charge (Qg) for fast switching
Avalanche energy rated (UIS) for reliability under transient conditions
Electrical Specifications:
Parameter
Symbol
Limit
Unit
Drain-source voltage at TJ max.
VDS
600
V
Gate-source voltage
VGS
±30
V
Continuous drain current (TJ = 150°C)
ID
8
A
Pulsed drain current
IDM
56
A
Maximum power dissipation
PD
35
W
Drain-source breakdown voltage
VDS
600
V
RDS(on) at VGS = 10 V, ID = 11 A
RDS(on)
0.18
Ω
Total gate charge at VGS = 10 V, ID = 11 A
Qg
86
nC
Soldering peak temperature
300
°C
Thermal and Mechanical Data:
Parameter
Symbol
Typ.
Max.
Unit
Maximum junction-to-ambient thermal resistance
RthJA
-
65
°C/W
Maximum junction-to-case (drain) thermal resistance
{"id":10027509252413,"title":"SIHA22N60E-E3","handle":"siha22n60e-e3","description":"\u003ch3\u003eVISHAY SEMICONDUCTOR Power Field-Effect Transistor SIHA22N60E-E3\u003c\/h3\u003e\n\u003cp\u003eIntroducing the VISHAY SEMICONDUCTOR SIHA22N60E-E3, a high-performance N-channel power MOSFET designed for demanding electronic applications. Manufactured in China, this device offers robust electrical characteristics suitable for switch mode power supplies, power factor correction, lighting, consumer electronics, and computing power supplies.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eProduct Features:\u003c\/strong\u003e\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003eLow figure-of-merit (FOM) R\u003csub\u003eon\u003c\/sub\u003e x Q\u003csub\u003eg\u003c\/sub\u003e\n\u003c\/li\u003e\n\u003cli\u003eLow input capacitance (C\u003csub\u003eiss\u003c\/sub\u003e) for efficient switching\u003c\/li\u003e\n\u003cli\u003eReduced switching and conduction losses\u003c\/li\u003e\n\u003cli\u003eUltra low gate charge (Q\u003csub\u003eg\u003c\/sub\u003e) for fast switching\u003c\/li\u003e\n\u003cli\u003eAvalanche energy rated (UIS) for reliability under transient conditions\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003e\u003cstrong\u003eElectrical Specifications:\u003c\/strong\u003e\u003c\/p\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eLimit\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source voltage at TJ max.\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e600\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e±30\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current (TJ = 150°C)\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e8\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePulsed drain current\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eDM\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e56\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e35\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source breakdown voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e600\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eR\u003csub\u003eDS(on)\u003c\/sub\u003e at V\u003csub\u003eGS\u003c\/sub\u003e = 10 V, I\u003csub\u003eD\u003c\/sub\u003e = 11 A\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003eDS(on)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e0.18\u003c\/td\u003e\n\u003ctd\u003eΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTotal gate charge at V\u003csub\u003eGS\u003c\/sub\u003e = 10 V, I\u003csub\u003eD\u003c\/sub\u003e = 11 A\u003c\/td\u003e\n\u003ctd\u003eQ\u003csub\u003eg\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e86\u003c\/td\u003e\n\u003ctd\u003enC\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSoldering peak temperature\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e300\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003cp\u003e\u003cstrong\u003eThermal and Mechanical Data:\u003c\/strong\u003e\u003c\/p\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eTyp.\u003c\/th\u003e\n\u003cth\u003eMax.\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction-to-ambient thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJA\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e65\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction-to-case (drain) thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJC\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e3.6\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003cp\u003e\u003cstrong\u003ePackage Type:\u003c\/strong\u003e TUBE\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003ePart Number:\u003c\/strong\u003e SIHA22N60E-E3\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eManufacturer:\u003c\/strong\u003e VISHAY SEMICONDUCTOR\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eUOM:\u003c\/strong\u003e EA\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eDatasheet:\u003c\/strong\u003e \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-siha22n60e-e3.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\u003c\/p\u003e\n\u003cp\u003eFor more detailed technical information, please refer to the datasheet or visit \u003ca href=\"http:\/\/www.vishay.com\" target=\"_blank\"\u003eVISHAY Semiconductor\u003c\/a\u003e.\u003c\/p\u003e\n\u003cp\u003e\u003cem\u003eNote: This product description is based solely on provided specifications. Please consult the datasheet for comprehensive details.\u003c\/em\u003e\u003c\/p\u003e\u003cbr\u003e","published_at":"2025-08-16T00:21:20+05:30","created_at":"2025-08-16T00:21:20+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["600V","8A","IMPORT_CSV","IMPORT_PT2","Mosfets","Power","Semiconductors","VISHA-SEM","WLDM"],"price":33262,"price_min":33262,"price_max":33262,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50625516896573,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"SIHA22N60E-E3","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"SIHA22N60E-E3","public_title":null,"options":["Default Title"],"price":33262,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"SIHA22N60E-E3","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHA22N60E-E3_55939992_f3cde957.jpg?v=1755283883"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHA22N60E-E3_55939992_f3cde957.jpg?v=1755283883","options":["Title"],"media":[{"alt":null,"id":45858630926653,"position":1,"preview_image":{"aspect_ratio":1.0,"height":200,"width":200,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHA22N60E-E3_55939992_f3cde957.jpg?v=1755283883"},"aspect_ratio":1.0,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHA22N60E-E3_55939992_f3cde957.jpg?v=1755283883","width":200}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eVISHAY SEMICONDUCTOR Power Field-Effect Transistor SIHA22N60E-E3\u003c\/h3\u003e\n\u003cp\u003eIntroducing the VISHAY SEMICONDUCTOR SIHA22N60E-E3, a high-performance N-channel power MOSFET designed for demanding electronic applications. Manufactured in China, this device offers robust electrical characteristics suitable for switch mode power supplies, power factor correction, lighting, consumer electronics, and computing power supplies.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eProduct Features:\u003c\/strong\u003e\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003eLow figure-of-merit (FOM) R\u003csub\u003eon\u003c\/sub\u003e x Q\u003csub\u003eg\u003c\/sub\u003e\n\u003c\/li\u003e\n\u003cli\u003eLow input capacitance (C\u003csub\u003eiss\u003c\/sub\u003e) for efficient switching\u003c\/li\u003e\n\u003cli\u003eReduced switching and conduction losses\u003c\/li\u003e\n\u003cli\u003eUltra low gate charge (Q\u003csub\u003eg\u003c\/sub\u003e) for fast switching\u003c\/li\u003e\n\u003cli\u003eAvalanche energy rated (UIS) for reliability under transient conditions\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003e\u003cstrong\u003eElectrical Specifications:\u003c\/strong\u003e\u003c\/p\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eLimit\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source voltage at TJ max.\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e600\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e±30\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current (TJ = 150°C)\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e8\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePulsed drain current\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eDM\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e56\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e35\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source breakdown voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e600\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eR\u003csub\u003eDS(on)\u003c\/sub\u003e at V\u003csub\u003eGS\u003c\/sub\u003e = 10 V, I\u003csub\u003eD\u003c\/sub\u003e = 11 A\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003eDS(on)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e0.18\u003c\/td\u003e\n\u003ctd\u003eΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTotal gate charge at V\u003csub\u003eGS\u003c\/sub\u003e = 10 V, I\u003csub\u003eD\u003c\/sub\u003e = 11 A\u003c\/td\u003e\n\u003ctd\u003eQ\u003csub\u003eg\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e86\u003c\/td\u003e\n\u003ctd\u003enC\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSoldering peak temperature\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e300\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003cp\u003e\u003cstrong\u003eThermal and Mechanical Data:\u003c\/strong\u003e\u003c\/p\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eTyp.\u003c\/th\u003e\n\u003cth\u003eMax.\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction-to-ambient thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJA\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e65\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction-to-case (drain) thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJC\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e3.6\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003cp\u003e\u003cstrong\u003ePackage Type:\u003c\/strong\u003e TUBE\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003ePart Number:\u003c\/strong\u003e SIHA22N60E-E3\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eManufacturer:\u003c\/strong\u003e VISHAY SEMICONDUCTOR\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eUOM:\u003c\/strong\u003e EA\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eDatasheet:\u003c\/strong\u003e \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-siha22n60e-e3.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\u003c\/p\u003e\n\u003cp\u003eFor more detailed technical information, please refer to the datasheet or visit \u003ca href=\"http:\/\/www.vishay.com\" target=\"_blank\"\u003eVISHAY Semiconductor\u003c\/a\u003e.\u003c\/p\u003e\n\u003cp\u003e\u003cem\u003eNote: This product description is based solely on provided specifications. Please consult the datasheet for comprehensive details.\u003c\/em\u003e\u003c\/p\u003e\u003cbr\u003e"}
