The VISHAY SEMICONDUCTOR SIHD2N80AE-GE3 is a high-performance N-channel power MOSFET designed for various demanding electronic applications. Manufactured in China, this MOSFET offers reliable switching and conduction capabilities suitable for power supplies, industrial equipment, and lighting systems.
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{"id":10022485262653,"title":"SIHD2N80AE-GE3","handle":"sihd2n80ae-ge3","description":"\u003ch3\u003eVISHAY SEMICONDUCTOR SIHD2N80AE-GE3 MOSFET TRANSISTOR\u003c\/h3\u003e\n\u003cp\u003eThe VISHAY SEMICONDUCTOR SIHD2N80AE-GE3 is a high-performance N-channel power MOSFET designed for various demanding electronic applications. Manufactured in China, this MOSFET offers reliable switching and conduction capabilities suitable for power supplies, industrial equipment, and lighting systems.\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003ePart Number:\u003c\/strong\u003e SIHD2N80AE-GE3\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eManufacturer:\u003c\/strong\u003e VISHAY SEMICONDUCTOR\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eUnit of Measure:\u003c\/strong\u003e EA\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePackage Type:\u003c\/strong\u003e DPAK (TO-252) in TUBE packaging\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eDatasheet:\u003c\/strong\u003e \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sihd2n80ae-ge3.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eLow figure-of-merit (FOM) R\u003csub\u003eon\u003c\/sub\u003e x Q\u003csub\u003eg\u003c\/sub\u003e\n\u003c\/li\u003e\n\u003cli\u003eLow effective capacitance (C\u003csub\u003eiss\u003c\/sub\u003e) for efficient switching\u003c\/li\u003e\n\u003cli\u003eReduced switching and conduction losses\u003c\/li\u003e\n\u003cli\u003eUltra low gate charge (Q\u003csub\u003eg\u003c\/sub\u003e) for fast switching\u003c\/li\u003e\n\u003cli\u003eAvalanche energy rated (UIS) for rugged performance\u003c\/li\u003e\n\u003cli\u003eIntegrated Zener diode ESD protection\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eApplications\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eServer and telecom power supplies\u003c\/li\u003e\n\u003cli\u003eSwitch mode power supplies (SMPS)\u003c\/li\u003e\n\u003cli\u003ePower factor correction (PFC)\u003c\/li\u003e\n\u003cli\u003eLighting: High-intensity discharge (HID), Fluorescent ballast lighting\u003c\/li\u003e\n\u003cli\u003eIndustrial: Welding, Induction heating, Motor drives, Battery chargers, Renewable energy, Solar (PV inverters)\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eConditions\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source breakdown voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e=0 V, I\u003csub\u003eD\u003c\/sub\u003e=250 μA\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e800\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source threshold voltage (N)\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS(th)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e=V\u003csub\u003eGS\u003c\/sub\u003e, I\u003csub\u003eD\u003c\/sub\u003e=250 μA\u003c\/td\u003e\n\u003ctd\u003e2.0\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e4.0\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source on-resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003eDS(on)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e=10 V, I\u003csub\u003eD\u003c\/sub\u003e=0.5 A\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e2.9\u003c\/td\u003e\n\u003ctd\u003e2.9\u003c\/td\u003e\n\u003ctd\u003eΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum drain current (TJ=25°C)\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e2.9\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e62.5\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source voltage (V\u003csub\u003eDS\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e800\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source voltage (V\u003csub\u003eGS\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e±30\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating junction temperature range\u003c\/td\u003e\n\u003ctd\u003eT\u003csub\u003eJ\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-55 to +150\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eThermal and Mechanical Details\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eTyp.\u003c\/th\u003e\n\u003cth\u003eMax.\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction-to-ambient thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJA\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e62\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction-to-case (drain) thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJC\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e2.0\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003cp\u003eFor detailed electrical characteristics, switching times, capacitance values, and more, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sihd2n80ae-ge3.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e.\u003c\/p\u003e\n\u003cp\u003eNote: The datasheet was not processed; please search the internet for the part number for more details.\u003c\/p\u003e","published_at":"2025-08-13T10:07:12+05:30","created_at":"2025-08-13T10:07:12+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["IMPORT_CSV","Mosfets","Semiconductors","VISHA-SEM","WLDM"],"price":9008,"price_min":9008,"price_max":9008,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50614630187325,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"SIHD2N80AE-GE3","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"SIHD2N80AE-GE3","public_title":null,"options":["Default Title"],"price":9008,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"SIHD2N80AE-GE3","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHD2N80AE-GE3_55999320_362d3b56.jpg?v=1755059836"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHD2N80AE-GE3_55999320_362d3b56.jpg?v=1755059836","options":["Title"],"media":[{"alt":null,"id":45813674410301,"position":1,"preview_image":{"aspect_ratio":1.0,"height":200,"width":200,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHD2N80AE-GE3_55999320_362d3b56.jpg?v=1755059836"},"aspect_ratio":1.0,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHD2N80AE-GE3_55999320_362d3b56.jpg?v=1755059836","width":200}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eVISHAY SEMICONDUCTOR SIHD2N80AE-GE3 MOSFET TRANSISTOR\u003c\/h3\u003e\n\u003cp\u003eThe VISHAY SEMICONDUCTOR SIHD2N80AE-GE3 is a high-performance N-channel power MOSFET designed for various demanding electronic applications. Manufactured in China, this MOSFET offers reliable switching and conduction capabilities suitable for power supplies, industrial equipment, and lighting systems.\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003ePart Number:\u003c\/strong\u003e SIHD2N80AE-GE3\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eManufacturer:\u003c\/strong\u003e VISHAY SEMICONDUCTOR\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eUnit of Measure:\u003c\/strong\u003e EA\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePackage Type:\u003c\/strong\u003e DPAK (TO-252) in TUBE packaging\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eDatasheet:\u003c\/strong\u003e \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sihd2n80ae-ge3.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eLow figure-of-merit (FOM) R\u003csub\u003eon\u003c\/sub\u003e x Q\u003csub\u003eg\u003c\/sub\u003e\n\u003c\/li\u003e\n\u003cli\u003eLow effective capacitance (C\u003csub\u003eiss\u003c\/sub\u003e) for efficient switching\u003c\/li\u003e\n\u003cli\u003eReduced switching and conduction losses\u003c\/li\u003e\n\u003cli\u003eUltra low gate charge (Q\u003csub\u003eg\u003c\/sub\u003e) for fast switching\u003c\/li\u003e\n\u003cli\u003eAvalanche energy rated (UIS) for rugged performance\u003c\/li\u003e\n\u003cli\u003eIntegrated Zener diode ESD protection\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eApplications\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eServer and telecom power supplies\u003c\/li\u003e\n\u003cli\u003eSwitch mode power supplies (SMPS)\u003c\/li\u003e\n\u003cli\u003ePower factor correction (PFC)\u003c\/li\u003e\n\u003cli\u003eLighting: High-intensity discharge (HID), Fluorescent ballast lighting\u003c\/li\u003e\n\u003cli\u003eIndustrial: Welding, Induction heating, Motor drives, Battery chargers, Renewable energy, Solar (PV inverters)\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eConditions\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source breakdown voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e=0 V, I\u003csub\u003eD\u003c\/sub\u003e=250 μA\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e800\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source threshold voltage (N)\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS(th)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e=V\u003csub\u003eGS\u003c\/sub\u003e, I\u003csub\u003eD\u003c\/sub\u003e=250 μA\u003c\/td\u003e\n\u003ctd\u003e2.0\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e4.0\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source on-resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003eDS(on)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e=10 V, I\u003csub\u003eD\u003c\/sub\u003e=0.5 A\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e2.9\u003c\/td\u003e\n\u003ctd\u003e2.9\u003c\/td\u003e\n\u003ctd\u003eΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum drain current (TJ=25°C)\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e2.9\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e62.5\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source voltage (V\u003csub\u003eDS\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e800\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source voltage (V\u003csub\u003eGS\u003c\/sub\u003e)\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e±30\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating junction temperature range\u003c\/td\u003e\n\u003ctd\u003eT\u003csub\u003eJ\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-55 to +150\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eThermal and Mechanical Details\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eTyp.\u003c\/th\u003e\n\u003cth\u003eMax.\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction-to-ambient thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJA\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e62\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction-to-case (drain) thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJC\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e2.0\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003cp\u003eFor detailed electrical characteristics, switching times, capacitance values, and more, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sihd2n80ae-ge3.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e.\u003c\/p\u003e\n\u003cp\u003eNote: The datasheet was not processed; please search the internet for the part number for more details.\u003c\/p\u003e"}
