The VISHAY SEMICONDUCTOR SiHP10N40D is a high-performance N-channel Power Field-Effect Transistor designed for demanding electronic applications. Manufactured in China, this MOSFET offers reliable operation with a maximum drain-source voltage of 400V and a continuous drain current of 10A at 25°C. It is supplied in a TO-220AB package, suitable for various industrial and consumer electronics applications.
Product Features
Optimal design with low area-specific on-resistance
Reduced capacitive switching losses and high body diode ruggedness
Avalanche energy rated (UIS) available for high reliability
Simple gate drive circuitry for ease of use
Low figure-of-merit (RDS(on) x Qg) for efficiency
Fast switching capabilities suitable for high-speed applications
Key Specifications
Parameter
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Voltage
VDS
-
-
400
V
Gate-Source Voltage
VGS
±30
-
-
V
Continuous Drain Current
ID
10
-
-
A
Pulsed Drain Current
IDM
-
-
23
A
Maximum Power Dissipation
PD
-
-
147
W
Operating Junction & Storage Temperature Range
TJ, Tstg
-55
-
150
°C
Drain-Source Breakdown Voltage
VDS
-
-
400
V
Gate-Source Threshold Voltage
VGS(th)
3
-
5
V
On-Resistance (VGS=10V, ID=5A)
RDS(on)
-
-
0.6
Ω
Thermal & Mechanical Specifications
Parameter
Symbol
Typ.
Max.
Unit
Maximum Junction-to-Ambient Thermal Resistance
RthJA
-
62
°C/W
Maximum Junction-to-Case (Drain) Thermal Resistance
For more detailed specifications and technical information, please refer to the datasheet linked above. The datasheet provides comprehensive details about the SiHP10N40D's electrical characteristics, switching times, and application guidelines.
Note: This datasheet provides information about parts that are RoHS-compliant and/or non-RoHS-compliant. Please review the datasheet for specific compliance details.
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{"id":10027509449021,"title":"SIHP10N40D-E3","handle":"sihp10n40d-e3","description":"\u003ch3\u003eVISHAY SEMICONDUCTOR SiHP10N40D Power MOSFET\u003c\/h3\u003e\n\u003cp\u003eThe VISHAY SEMICONDUCTOR SiHP10N40D is a high-performance N-channel Power Field-Effect Transistor designed for demanding electronic applications. Manufactured in China, this MOSFET offers reliable operation with a maximum drain-source voltage of 400V and a continuous drain current of 10A at 25°C. It is supplied in a TO-220AB package, suitable for various industrial and consumer electronics applications.\u003c\/p\u003e\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eOptimal design with low area-specific on-resistance\u003c\/li\u003e\n\u003cli\u003eReduced capacitive switching losses and high body diode ruggedness\u003c\/li\u003e\n\u003cli\u003eAvalanche energy rated (UIS) available for high reliability\u003c\/li\u003e\n\u003cli\u003eSimple gate drive circuitry for ease of use\u003c\/li\u003e\n\u003cli\u003eLow figure-of-merit (R\u003csub\u003eDS(on)\u003c\/sub\u003e x Q\u003csub\u003eg\u003c\/sub\u003e) for efficiency\u003c\/li\u003e\n\u003cli\u003eFast switching capabilities suitable for high-speed applications\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eKey Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eMin.\u003c\/th\u003e\n\u003cth\u003eTyp.\u003c\/th\u003e\n\u003cth\u003eMax.\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e400\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e±30\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous Drain Current\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e10\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePulsed Drain Current\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eDM\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e23\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Power Dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e147\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating Junction \u0026amp; Storage Temperature Range\u003c\/td\u003e\n\u003ctd\u003eT\u003csub\u003eJ, T\u003csub\u003estg\u003c\/sub\u003e\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-55\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source Breakdown Voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e400\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-Source Threshold Voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS(th)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e3\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e5\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOn-Resistance (V\u003csub\u003eGS\u003c\/sub\u003e=10V, I\u003csub\u003eD\u003c\/sub\u003e=5A)\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003eDS(on)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e0.6\u003c\/td\u003e\n\u003ctd\u003eΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eThermal \u0026amp; Mechanical Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eTyp.\u003c\/th\u003e\n\u003cth\u003eMax.\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Junction-to-Ambient Thermal Resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJA\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e62\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Junction-to-Case (Drain) Thermal Resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJC\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e0.85\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eAdditional Details\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003ePackage Type: TO-220AB\u003c\/li\u003e\n\u003cli\u003eLead (Pb)-free: SiHP10N40D-E3\u003c\/li\u003e\n\u003cli\u003eLead (Pb)-free and Halogen-free: SiHP10N40D-GE3\u003c\/li\u003e\n\u003cli\u003eECCN: EAR99\u003c\/li\u003e\n\u003cli\u003eProduct Type: Semiconductors | MOSFETs\u003c\/li\u003e\n\u003cli\u003eProduct Category: Semiconductors\u003c\/li\u003e\n\u003cli\u003eDatasheet: \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sihp10n40d-e3.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003eFor more detailed specifications and technical information, please refer to the datasheet linked above. The datasheet provides comprehensive details about the SiHP10N40D's electrical characteristics, switching times, and application guidelines.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eNote:\u003c\/strong\u003e This datasheet provides information about parts that are RoHS-compliant and\/or non-RoHS-compliant. Please review the datasheet for specific compliance details.\u003c\/p\u003e\u003cbr\u003e","published_at":"2025-08-16T00:21:24+05:30","created_at":"2025-08-16T00:21:24+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["10A","400V","IMPORT_CSV","IMPORT_PT2","Mosfets","Power","Semiconductors","VISHA-SEM","WLDM"],"price":10117,"price_min":10117,"price_max":10117,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50625517355325,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"SIHP10N40D-E3","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"SIHP10N40D-E3","public_title":null,"options":["Default Title"],"price":10117,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"SIHP10N40D-E3","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHP10N40D-E3_55939993_06a7bc90.jpg?v=1755283887"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHP10N40D-E3_55939993_06a7bc90.jpg?v=1755283887","options":["Title"],"media":[{"alt":null,"id":45858631287101,"position":1,"preview_image":{"aspect_ratio":1.0,"height":200,"width":200,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHP10N40D-E3_55939993_06a7bc90.jpg?v=1755283887"},"aspect_ratio":1.0,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHP10N40D-E3_55939993_06a7bc90.jpg?v=1755283887","width":200}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eVISHAY SEMICONDUCTOR SiHP10N40D Power MOSFET\u003c\/h3\u003e\n\u003cp\u003eThe VISHAY SEMICONDUCTOR SiHP10N40D is a high-performance N-channel Power Field-Effect Transistor designed for demanding electronic applications. Manufactured in China, this MOSFET offers reliable operation with a maximum drain-source voltage of 400V and a continuous drain current of 10A at 25°C. It is supplied in a TO-220AB package, suitable for various industrial and consumer electronics applications.\u003c\/p\u003e\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eOptimal design with low area-specific on-resistance\u003c\/li\u003e\n\u003cli\u003eReduced capacitive switching losses and high body diode ruggedness\u003c\/li\u003e\n\u003cli\u003eAvalanche energy rated (UIS) available for high reliability\u003c\/li\u003e\n\u003cli\u003eSimple gate drive circuitry for ease of use\u003c\/li\u003e\n\u003cli\u003eLow figure-of-merit (R\u003csub\u003eDS(on)\u003c\/sub\u003e x Q\u003csub\u003eg\u003c\/sub\u003e) for efficiency\u003c\/li\u003e\n\u003cli\u003eFast switching capabilities suitable for high-speed applications\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eKey Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eMin.\u003c\/th\u003e\n\u003cth\u003eTyp.\u003c\/th\u003e\n\u003cth\u003eMax.\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e400\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e±30\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous Drain Current\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e10\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePulsed Drain Current\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eDM\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e23\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Power Dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e147\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating Junction \u0026amp; Storage Temperature Range\u003c\/td\u003e\n\u003ctd\u003eT\u003csub\u003eJ, T\u003csub\u003estg\u003c\/sub\u003e\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-55\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source Breakdown Voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e400\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-Source Threshold Voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS(th)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e3\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e5\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOn-Resistance (V\u003csub\u003eGS\u003c\/sub\u003e=10V, I\u003csub\u003eD\u003c\/sub\u003e=5A)\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003eDS(on)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e0.6\u003c\/td\u003e\n\u003ctd\u003eΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eThermal \u0026amp; Mechanical Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eTyp.\u003c\/th\u003e\n\u003cth\u003eMax.\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Junction-to-Ambient Thermal Resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJA\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e62\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Junction-to-Case (Drain) Thermal Resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJC\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e0.85\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eAdditional Details\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003ePackage Type: TO-220AB\u003c\/li\u003e\n\u003cli\u003eLead (Pb)-free: SiHP10N40D-E3\u003c\/li\u003e\n\u003cli\u003eLead (Pb)-free and Halogen-free: SiHP10N40D-GE3\u003c\/li\u003e\n\u003cli\u003eECCN: EAR99\u003c\/li\u003e\n\u003cli\u003eProduct Type: Semiconductors | MOSFETs\u003c\/li\u003e\n\u003cli\u003eProduct Category: Semiconductors\u003c\/li\u003e\n\u003cli\u003eDatasheet: \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sihp10n40d-e3.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003eFor more detailed specifications and technical information, please refer to the datasheet linked above. The datasheet provides comprehensive details about the SiHP10N40D's electrical characteristics, switching times, and application guidelines.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eNote:\u003c\/strong\u003e This datasheet provides information about parts that are RoHS-compliant and\/or non-RoHS-compliant. Please review the datasheet for specific compliance details.\u003c\/p\u003e\u003cbr\u003e"}
