Introducing the VISHAY SEMICONDUCTOR SIHP21N60EF-GE3, a high-performance N-channel Power Field-Effect Transistor designed for demanding electronic applications. Manufactured in China, this MOSFET offers robust electrical characteristics and reliable operation for various power management solutions.
Part Number: SIHP21N60EF-GE3
Manufacturer: VISHAY SEMICONDUCTOR
Country of Origin: CN
Unit of Measure: EA
ECCN: EAR99
Package Type: TUBE
For detailed technical specifications, refer to the datasheet.
Key Features
Fast body diode MOSFET utilizing E series technology for improved switching performance
Reduced reverse recovery time (t_rr), reverse recovery charge (Q_rr), and reverse recovery current (I_RRM)
Low figure-of-merit (FOM): R_on x Q_g for efficient conduction and switching
Low input capacitance (C_iss) for faster switching speeds
Enhanced robustness with low Q_rr and avalanche energy rated (UIS)
Ultra low gate charge (Q_g) for reduced drive power
Maximum drain-source voltage (V_DS) of 600V and continuous drain current (I_D) of 21A at 25°C
Package: TO-220AB, suitable for high power applications
Electrical Specifications
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source voltage
V_DS
-
-
600
V
Gate-source voltage
V_GS
±30
-
-
V
Continuous drain current
I_D
V_GS=10V, TJ=25°C
-
-
21
A
Maximum power dissipation
P_D
-
-
227
W
Drain-source on-resistance
R_DS(on)
V_GS=10V, I_D=11A
-
-
0.176
Ω
Maximum junction temperature
T_J
-55
to
150
°C
Soldering peak temperature
For 10 seconds
-
-
300
°C
Additional Features & Applications
Suitable for telecommunications, server and telecom power supplies, lighting, consumer electronics, industrial welding, battery chargers, and renewable energy systems such as solar PV inverters.
Designed for switch mode power supplies (SMPS) and topologies including LLC, phase shifted bridge (ZVS), 3-level inverter, and AC/DC bridge.
For more detailed information, please consult the datasheet.
Note: Datasheet was not processed, please search the internet for the part number for more details.
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{"id":10027751080253,"title":"SIHP21N60EF-GE3","handle":"sihp21n60ef-ge3","description":"\u003ch3\u003eVISHAY SEMICONDUCTOR SIHP21N60EF-GE3 Power MOSFET\u003c\/h3\u003e\n\u003cp\u003eIntroducing the VISHAY SEMICONDUCTOR SIHP21N60EF-GE3, a high-performance N-channel Power Field-Effect Transistor designed for demanding electronic applications. Manufactured in China, this MOSFET offers robust electrical characteristics and reliable operation for various power management solutions.\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003ePart Number:\u003c\/strong\u003e SIHP21N60EF-GE3\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eManufacturer:\u003c\/strong\u003e VISHAY SEMICONDUCTOR\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eUnit of Measure:\u003c\/strong\u003e EA\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePackage Type:\u003c\/strong\u003e TUBE\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003eFor detailed technical specifications, refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sihp21n60ef-ge3.pdf\" target=\"_blank\" rel=\"noopener noreferrer\"\u003edatasheet\u003c\/a\u003e.\u003c\/p\u003e\n\u003ch3\u003eKey Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eFast body diode MOSFET utilizing E series technology for improved switching performance\u003c\/li\u003e\n\u003cli\u003eReduced reverse recovery time (t_rr), reverse recovery charge (Q_rr), and reverse recovery current (I_RRM)\u003c\/li\u003e\n\u003cli\u003eLow figure-of-merit (FOM): R_on x Q_g for efficient conduction and switching\u003c\/li\u003e\n\u003cli\u003eLow input capacitance (C_iss) for faster switching speeds\u003c\/li\u003e\n\u003cli\u003eEnhanced robustness with low Q_rr and avalanche energy rated (UIS)\u003c\/li\u003e\n\u003cli\u003eUltra low gate charge (Q_g) for reduced drive power\u003c\/li\u003e\n\u003cli\u003eMaximum drain-source voltage (V_DS) of 600V and continuous drain current (I_D) of 21A at 25°C\u003c\/li\u003e\n\u003cli\u003ePackage: TO-220AB, suitable for high power applications\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eConditions\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n\u003ctd\u003eV_DS\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e600\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source voltage\u003c\/td\u003e\n\u003ctd\u003eV_GS\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e±30\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current\u003c\/td\u003e\n\u003ctd\u003eI_D\u003c\/td\u003e\n\u003ctd\u003eV_GS=10V, TJ=25°C\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e21\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003eP_D\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e227\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source on-resistance\u003c\/td\u003e\n\u003ctd\u003eR_DS(on)\u003c\/td\u003e\n\u003ctd\u003eV_GS=10V, I_D=11A\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e0.176\u003c\/td\u003e\n\u003ctd\u003eΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction temperature\u003c\/td\u003e\n\u003ctd\u003eT_J\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-55\u003c\/td\u003e\n\u003ctd\u003eto\u003c\/td\u003e\n\u003ctd\u003e150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSoldering peak temperature\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003eFor 10 seconds\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e300\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eAdditional Features \u0026amp; Applications\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eSuitable for telecommunications, server and telecom power supplies, lighting, consumer electronics, industrial welding, battery chargers, and renewable energy systems such as solar PV inverters.\u003c\/li\u003e\n\u003cli\u003eDesigned for switch mode power supplies (SMPS) and topologies including LLC, phase shifted bridge (ZVS), 3-level inverter, and AC\/DC bridge.\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003eFor more detailed information, please consult the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sihp21n60ef-ge3.pdf\" target=\"_blank\" rel=\"noopener noreferrer\"\u003edatasheet\u003c\/a\u003e.\u003c\/p\u003e\n\u003cp\u003e\u003cem\u003eNote: Datasheet was not processed, please search the internet for the part number for more details.\u003c\/em\u003e\u003c\/p\u003e\u003cbr\u003e","published_at":"2025-08-16T02:42:22+05:30","created_at":"2025-08-16T02:42:22+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["21A","600V","IMPORT_CSV","IMPORT_PT2","Mosfets","Power","Semiconductors","VISHA-SEM","WLDM"],"price":37004,"price_min":37004,"price_max":37004,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50625989706045,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"SIHP21N60EF-GE3","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"SIHP21N60EF-GE3","public_title":null,"options":["Default Title"],"price":37004,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"SIHP21N60EF-GE3","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHP21N60EF-GE3_55939994_7faec033.jpg?v=1755292345"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHP21N60EF-GE3_55939994_7faec033.jpg?v=1755292345","options":["Title"],"media":[{"alt":null,"id":45860404986173,"position":1,"preview_image":{"aspect_ratio":1.0,"height":200,"width":200,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHP21N60EF-GE3_55939994_7faec033.jpg?v=1755292345"},"aspect_ratio":1.0,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHP21N60EF-GE3_55939994_7faec033.jpg?v=1755292345","width":200}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eVISHAY SEMICONDUCTOR SIHP21N60EF-GE3 Power MOSFET\u003c\/h3\u003e\n\u003cp\u003eIntroducing the VISHAY SEMICONDUCTOR SIHP21N60EF-GE3, a high-performance N-channel Power Field-Effect Transistor designed for demanding electronic applications. Manufactured in China, this MOSFET offers robust electrical characteristics and reliable operation for various power management solutions.\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003ePart Number:\u003c\/strong\u003e SIHP21N60EF-GE3\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eManufacturer:\u003c\/strong\u003e VISHAY SEMICONDUCTOR\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eUnit of Measure:\u003c\/strong\u003e EA\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePackage Type:\u003c\/strong\u003e TUBE\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003eFor detailed technical specifications, refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sihp21n60ef-ge3.pdf\" target=\"_blank\" rel=\"noopener noreferrer\"\u003edatasheet\u003c\/a\u003e.\u003c\/p\u003e\n\u003ch3\u003eKey Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eFast body diode MOSFET utilizing E series technology for improved switching performance\u003c\/li\u003e\n\u003cli\u003eReduced reverse recovery time (t_rr), reverse recovery charge (Q_rr), and reverse recovery current (I_RRM)\u003c\/li\u003e\n\u003cli\u003eLow figure-of-merit (FOM): R_on x Q_g for efficient conduction and switching\u003c\/li\u003e\n\u003cli\u003eLow input capacitance (C_iss) for faster switching speeds\u003c\/li\u003e\n\u003cli\u003eEnhanced robustness with low Q_rr and avalanche energy rated (UIS)\u003c\/li\u003e\n\u003cli\u003eUltra low gate charge (Q_g) for reduced drive power\u003c\/li\u003e\n\u003cli\u003eMaximum drain-source voltage (V_DS) of 600V and continuous drain current (I_D) of 21A at 25°C\u003c\/li\u003e\n\u003cli\u003ePackage: TO-220AB, suitable for high power applications\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eConditions\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n\u003ctd\u003eV_DS\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e600\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source voltage\u003c\/td\u003e\n\u003ctd\u003eV_GS\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e±30\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current\u003c\/td\u003e\n\u003ctd\u003eI_D\u003c\/td\u003e\n\u003ctd\u003eV_GS=10V, TJ=25°C\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e21\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003eP_D\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e227\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source on-resistance\u003c\/td\u003e\n\u003ctd\u003eR_DS(on)\u003c\/td\u003e\n\u003ctd\u003eV_GS=10V, I_D=11A\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e0.176\u003c\/td\u003e\n\u003ctd\u003eΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction temperature\u003c\/td\u003e\n\u003ctd\u003eT_J\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-55\u003c\/td\u003e\n\u003ctd\u003eto\u003c\/td\u003e\n\u003ctd\u003e150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSoldering peak temperature\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003eFor 10 seconds\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e300\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eAdditional Features \u0026amp; Applications\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eSuitable for telecommunications, server and telecom power supplies, lighting, consumer electronics, industrial welding, battery chargers, and renewable energy systems such as solar PV inverters.\u003c\/li\u003e\n\u003cli\u003eDesigned for switch mode power supplies (SMPS) and topologies including LLC, phase shifted bridge (ZVS), 3-level inverter, and AC\/DC bridge.\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003eFor more detailed information, please consult the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sihp21n60ef-ge3.pdf\" target=\"_blank\" rel=\"noopener noreferrer\"\u003edatasheet\u003c\/a\u003e.\u003c\/p\u003e\n\u003cp\u003e\u003cem\u003eNote: Datasheet was not processed, please search the internet for the part number for more details.\u003c\/em\u003e\u003c\/p\u003e\u003cbr\u003e"}
