VISHAY SEMICONDUCTOR Power Field-Effect Transistor (Part Number: SIHU4N80AE-GE3)
Introducing the VISHAY SEMICONDUCTOR SIHU4N80AE-GE3, an advanced N-Channel Power MOSFET designed for high-performance applications. Manufactured in China, this semiconductor offers reliable switching and conduction capabilities suitable for a wide range of industrial, server, telecom, and lighting power supplies.
Product Features
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss) for efficient switching
Reduced switching and conduction losses
Ultra low gate charge (Qg) for fast switching
Avalanche energy rated (UIS) for rugged operation
Package Type: TUBE (TO-251)
RoHS compliant (not specified)
ECCN: EAR99
Electrical and Thermal Specifications
Parameter
Symbol
Min.
Typ.
Max.
Unit
Drain-source voltage
VDS
-
-
800 V
Gate-source voltage
VGS
±30 V
-
-
Continuous drain current (TJ=150°C)
ID
4.1 A
-
-
Maximum power dissipation
PD
-
-
62.5 W
Maximum junction-to-ambient thermal resistance
RthJA
-
-
62 °C/W
Maximum junction-to-case (drain)
RthJC
-
-
2.0 °C/W
Absolute Maximum Ratings
Parameter
Symbol
Limit
Unit
Drain-source voltage
VDS
800 V
Gate-source voltage
VGS
±30 V
Drain current (pulsed)
IDM
7.0 A
Single pulse avalanche energy
EAS
6.9 mJ
Soldering peak temperature
-
260 °C (for 10 s)
Key Features & Applications
Ideal for server and telecom power supplies, switch mode power supplies (SMPS), and power factor correction (PFC)
Suitable for lighting applications such as HID and fluorescent ballast lighting
Industrial applications including welding, induction heating, motor drives, battery chargers, and renewable energy systems like solar inverters
Datasheet & Additional Resources
For detailed technical specifications, download the datasheet here: SIHU4N80AE-GE3 Datasheet. For more information about Vishay Siliconix products, visit Vishay Siliconix.
Disclaimer
Note: Datasheet was not processed please search the internet for the part number for more details.
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{"id":10021791007037,"title":"SIHU4N80AE-GE3","handle":"sihu4n80ae-ge3","description":"\u003ch3\u003eVISHAY SEMICONDUCTOR Power Field-Effect Transistor (Part Number: SIHU4N80AE-GE3)\u003c\/h3\u003e\n\u003cp\u003eIntroducing the VISHAY SEMICONDUCTOR SIHU4N80AE-GE3, an advanced N-Channel Power MOSFET designed for high-performance applications. Manufactured in China, this semiconductor offers reliable switching and conduction capabilities suitable for a wide range of industrial, server, telecom, and lighting power supplies.\u003c\/p\u003e\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eLow figure-of-merit (FOM) R\u003csub\u003eon\u003c\/sub\u003e x Q\u003csub\u003eg\u003c\/sub\u003e\n\u003c\/li\u003e\n\u003cli\u003eLow effective capacitance (C\u003csub\u003eiss\u003c\/sub\u003e) for efficient switching\u003c\/li\u003e\n\u003cli\u003eReduced switching and conduction losses\u003c\/li\u003e\n\u003cli\u003eUltra low gate charge (Q\u003csub\u003eg\u003c\/sub\u003e) for fast switching\u003c\/li\u003e\n\u003cli\u003eAvalanche energy rated (UIS) for rugged operation\u003c\/li\u003e\n\u003cli\u003ePackage Type: TUBE (TO-251)\u003c\/li\u003e\n\u003cli\u003eRoHS compliant (not specified)\u003c\/li\u003e\n\u003cli\u003eECCN: EAR99\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical and Thermal Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eMin.\u003c\/th\u003e\n\u003cth\u003eTyp.\u003c\/th\u003e\n\u003cth\u003eMax.\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e800 V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e±30 V\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current (TJ=150°C)\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e4.1 A\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e62.5 W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction-to-ambient thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJA\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e62 °C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction-to-case (drain)\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJC\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e2.0 °C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eAbsolute Maximum Ratings\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eLimit\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e800 V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e±30 V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain current (pulsed)\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eDM\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e7.0 A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSingle pulse avalanche energy\u003c\/td\u003e\n\u003ctd\u003eE\u003csub\u003eAS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e6.9 mJ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSoldering peak temperature\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e260 °C (for 10 s)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eKey Features \u0026amp; Applications\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eIdeal for server and telecom power supplies, switch mode power supplies (SMPS), and power factor correction (PFC)\u003c\/li\u003e\n\u003cli\u003eSuitable for lighting applications such as HID and fluorescent ballast lighting\u003c\/li\u003e\n\u003cli\u003eIndustrial applications including welding, induction heating, motor drives, battery chargers, and renewable energy systems like solar inverters\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eDatasheet \u0026amp; Additional Resources\u003c\/h3\u003e\n\u003cp\u003eFor detailed technical specifications, download the datasheet here: \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sihu4n80ae-ge3.pdf\" target=\"_blank\"\u003eSIHU4N80AE-GE3 Datasheet\u003c\/a\u003e. For more information about Vishay Siliconix products, visit \u003ca href=\"http:\/\/www.vishay.com\" target=\"_blank\"\u003eVishay Siliconix\u003c\/a\u003e.\u003c\/p\u003e\n\u003ch3\u003eDisclaimer\u003c\/h3\u003e\n\u003cp\u003eNote: Datasheet was not processed please search the internet for the part number for more details.\u003c\/p\u003e","published_at":"2025-08-12T22:35:14+05:30","created_at":"2025-08-12T22:35:14+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["IMPORT_CSV","Mosfets","Power","Semiconductors","VISHA-SEM","WLDM"],"price":12057,"price_min":12057,"price_max":12057,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50613250654525,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"SIHU4N80AE-GE3","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"SIHU4N80AE-GE3","public_title":null,"options":["Default Title"],"price":12057,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"SIHU4N80AE-GE3","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHU4N80AE-GE3_55967951_4556df0b.jpg?v=1755018318"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHU4N80AE-GE3_55967951_4556df0b.jpg?v=1755018318","options":["Title"],"media":[{"alt":null,"id":45806494744893,"position":1,"preview_image":{"aspect_ratio":1.0,"height":200,"width":200,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHU4N80AE-GE3_55967951_4556df0b.jpg?v=1755018318"},"aspect_ratio":1.0,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHU4N80AE-GE3_55967951_4556df0b.jpg?v=1755018318","width":200}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eVISHAY SEMICONDUCTOR Power Field-Effect Transistor (Part Number: SIHU4N80AE-GE3)\u003c\/h3\u003e\n\u003cp\u003eIntroducing the VISHAY SEMICONDUCTOR SIHU4N80AE-GE3, an advanced N-Channel Power MOSFET designed for high-performance applications. Manufactured in China, this semiconductor offers reliable switching and conduction capabilities suitable for a wide range of industrial, server, telecom, and lighting power supplies.\u003c\/p\u003e\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eLow figure-of-merit (FOM) R\u003csub\u003eon\u003c\/sub\u003e x Q\u003csub\u003eg\u003c\/sub\u003e\n\u003c\/li\u003e\n\u003cli\u003eLow effective capacitance (C\u003csub\u003eiss\u003c\/sub\u003e) for efficient switching\u003c\/li\u003e\n\u003cli\u003eReduced switching and conduction losses\u003c\/li\u003e\n\u003cli\u003eUltra low gate charge (Q\u003csub\u003eg\u003c\/sub\u003e) for fast switching\u003c\/li\u003e\n\u003cli\u003eAvalanche energy rated (UIS) for rugged operation\u003c\/li\u003e\n\u003cli\u003ePackage Type: TUBE (TO-251)\u003c\/li\u003e\n\u003cli\u003eRoHS compliant (not specified)\u003c\/li\u003e\n\u003cli\u003eECCN: EAR99\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical and Thermal Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eMin.\u003c\/th\u003e\n\u003cth\u003eTyp.\u003c\/th\u003e\n\u003cth\u003eMax.\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e800 V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e±30 V\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current (TJ=150°C)\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e4.1 A\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e62.5 W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction-to-ambient thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJA\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e62 °C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction-to-case (drain)\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJC\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e2.0 °C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eAbsolute Maximum Ratings\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eLimit\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e800 V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e±30 V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain current (pulsed)\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eDM\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e7.0 A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSingle pulse avalanche energy\u003c\/td\u003e\n\u003ctd\u003eE\u003csub\u003eAS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e6.9 mJ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSoldering peak temperature\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e260 °C (for 10 s)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eKey Features \u0026amp; Applications\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eIdeal for server and telecom power supplies, switch mode power supplies (SMPS), and power factor correction (PFC)\u003c\/li\u003e\n\u003cli\u003eSuitable for lighting applications such as HID and fluorescent ballast lighting\u003c\/li\u003e\n\u003cli\u003eIndustrial applications including welding, induction heating, motor drives, battery chargers, and renewable energy systems like solar inverters\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eDatasheet \u0026amp; Additional Resources\u003c\/h3\u003e\n\u003cp\u003eFor detailed technical specifications, download the datasheet here: \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sihu4n80ae-ge3.pdf\" target=\"_blank\"\u003eSIHU4N80AE-GE3 Datasheet\u003c\/a\u003e. For more information about Vishay Siliconix products, visit \u003ca href=\"http:\/\/www.vishay.com\" target=\"_blank\"\u003eVishay Siliconix\u003c\/a\u003e.\u003c\/p\u003e\n\u003ch3\u003eDisclaimer\u003c\/h3\u003e\n\u003cp\u003eNote: Datasheet was not processed please search the internet for the part number for more details.\u003c\/p\u003e"}
I'm particularly impressed with how carefully the header pins are packed for the RP2350-PiZero, they arrived in perfect condition without any bent pins, which has been a persistent issue with other competitors. This attention to packaging detail really stands out.
I also received the latest A4 revision of the RP2350, which shows you maintain current inventory, that's really valuable for customers who want the most up to date components.
The delivery was quick and hassle free throughout. I'll definitely be recommending you to others!
App feedback: The discounts offered through the app are a nice bonus, but the component search function could be improved to match the ease of use on the website version. The rest of the app functions work well.
