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SISC06DN-T1-GE3

SKU: SISC06DN-T1-GE3

Regular price ₹ 72.07
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VISHAY SISC06DN-T1-GE3 Power Field-Effect Transistor

Enhance your electronic designs with the VISHAY SISC06DN-T1-GE3, a high-performance Power Field-Effect Transistor (FET) optimized for various semiconductor applications. Manufactured in China, this MOSFET is designed to deliver reliable switching and power management capabilities.

  • Part Number: SISC06DN-T1-GE3
  • Manufacturer: VISHAY
  • Country of Origin: CN
  • Product Type: Semiconductors
  • Product Category: Semiconductors | MOSFETs
  • Package Type: REEL
  • UOM: EA
  • ECCN: EAR99
  • RoHS Compliant: Yes
  • Datasheet: Download Datasheet

Product Features

  • High efficiency power switching suitable for demanding electronic applications
  • Designed for low on-resistance and fast switching performance
  • Reliable operation in power management circuits
  • RoHS compliant, ensuring environmentally friendly manufacturing

Specifications

Parameter Value
Part Number SISC06DN-T1-GE3
Package Type REEL
Country of Origin CN
UOM EA
ECCN EAR99
RoHS Yes

For detailed technical specifications and application information, please refer to the datasheet.

Note: Datasheet was not processed, please search the internet for the part number for more details.


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