VISHAY SEMICONDUCTOR Power Field-Effect Transistor (SISF02DN-T1-GE3)
Introducing the VISHAY SEMICONDUCTOR SISF02DN, a high-performance power MOSFET designed for demanding electronic applications. Manufactured in China, this N-channel MOSFET offers reliable power switching capabilities with a maximum drain current of 60A and a voltage rating of 25V. Ideal for use in battery protection switches, bi-directional switches, and load switches, this device ensures efficient circuit operation in compact, thermally enhanced packages.
Product Features
PowerPAK 1212-8SCD package for compact and thermally efficient design
Very low source-to-source on resistance (RDS(on)) at VGS = 10 V (max. 0.0035 Ω)
Integrated common-drain dual N-channel MOSFET configuration for bi-directional current flow
100% Rg and UIS tested for reliability
Optimized for circuit layouts requiring bi-directional switching
Electrical Specifications
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source breakdown voltage
VDS
VGS = 0 V, ID = 250 μA
-
-
-
V
Gate-source threshold voltage
VGS(th)
VS1S2 = VGS, ID = 250 μA
1
-
2.3
V
On-state drain current
IS1S2(on)
VS1S2 ≥ 10 V, VGS = 10 V
-
20
-
A
Drain-source on-resistance
RDS(on)
VGS = 10 V, ID = 7 A
-
0.0027
0.0035
Ω
Maximum drain current (pulsed)
IS1S2M
t = 100 μs
-
-
140
A
Maximum power dissipation
PD
TC = 25 °C
-
69.4
-
W
Operating junction temperature range
TJ
-55 to +150
-
-
°C
Thermal and Mechanical Specifications
Parameter
Symbol
Typical
Maximum
Unit
Maximum junction-to-ambient thermal resistance
RthJA
19
24
°C/W
Maximum junction-to-case (drain)
RthJC
1.4
1.8
Package and Compliance
Package Type: PowerPAK 1212-8SCD
Lead (Pb)-free and halogen-free: SiSF02DN-T1-GE3
ECCN: EAR99
Datasheet & Additional Information
For detailed technical specifications and application guidelines, please refer to the datasheet.
Note: The datasheet was not processed; please search the internet for the part number SISF02DN for more details.
I'm particularly impressed with how carefully the header pins are packed for the RP2350-PiZero, they arrived in perfect condition without any bent pins, which has been a persistent issue with other competitors. This attention to packaging detail really stands out.
I also received the latest A4 revision of the RP2350, which shows you maintain current inventory, that's really valuable for customers who want the most up to date components.
The delivery was quick and hassle free throughout. I'll definitely be recommending you to others!
App feedback: The discounts offered through the app are a nice bonus, but the component search function could be improved to match the ease of use on the website version. The rest of the app functions work well.
{"id":10021791039805,"title":"SISF02DN-T1-GE3","handle":"sisf02dn-t1-ge3","description":"\u003ch3\u003eVISHAY SEMICONDUCTOR Power Field-Effect Transistor (SISF02DN-T1-GE3)\u003c\/h3\u003e\n\u003cp\u003eIntroducing the VISHAY SEMICONDUCTOR SISF02DN, a high-performance power MOSFET designed for demanding electronic applications. Manufactured in China, this N-channel MOSFET offers reliable power switching capabilities with a maximum drain current of 60A and a voltage rating of 25V. Ideal for use in battery protection switches, bi-directional switches, and load switches, this device ensures efficient circuit operation in compact, thermally enhanced packages.\u003c\/p\u003e\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003ePowerPAK 1212-8SCD package for compact and thermally efficient design\u003c\/li\u003e\n\u003cli\u003eVery low source-to-source on resistance (R\u003csub\u003eDS(on)\u003c\/sub\u003e) at V\u003csub\u003eGS\u003c\/sub\u003e = 10 V (max. 0.0035 Ω)\u003c\/li\u003e\n\u003cli\u003eIntegrated common-drain dual N-channel MOSFET configuration for bi-directional current flow\u003c\/li\u003e\n\u003cli\u003e100% R\u003csub\u003eg\u003c\/sub\u003e and UIS tested for reliability\u003c\/li\u003e\n\u003cli\u003eOptimized for circuit layouts requiring bi-directional switching\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eConditions\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source breakdown voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e = 0 V, I\u003csub\u003eD\u003c\/sub\u003e = 250 μA\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source threshold voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS(th)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eS1S2\u003c\/sub\u003e = V\u003csub\u003eGS\u003c\/sub\u003e, I\u003csub\u003eD\u003c\/sub\u003e = 250 μA\u003c\/td\u003e\n\u003ctd\u003e1\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e2.3\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOn-state drain current\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eS1S2(on)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eS1S2\u003c\/sub\u003e ≥ 10 V, V\u003csub\u003eGS\u003c\/sub\u003e = 10 V\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e20\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source on-resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003eDS(on)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e = 10 V, I\u003csub\u003eD\u003c\/sub\u003e = 7 A\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e0.0027\u003c\/td\u003e\n\u003ctd\u003e0.0035\u003c\/td\u003e\n\u003ctd\u003eΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum drain current (pulsed)\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eS1S2M\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003et = 100 μs\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e140\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003eTC = 25 °C\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e69.4\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating junction temperature range\u003c\/td\u003e\n\u003ctd\u003eT\u003csub\u003eJ\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-55 to +150\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eThermal and Mechanical Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eTypical\u003c\/th\u003e\n\u003cth\u003eMaximum\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction-to-ambient thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJA\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e19\u003c\/td\u003e\n\u003ctd\u003e24\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction-to-case (drain)\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJC\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e1.4\u003c\/td\u003e\n\u003ctd\u003e1.8\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003ePackage and Compliance\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003ePackage Type: PowerPAK 1212-8SCD\u003c\/li\u003e\n\u003cli\u003eLead (Pb)-free and halogen-free: SiSF02DN-T1-GE3\u003c\/li\u003e\n\u003cli\u003eECCN: EAR99\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eDatasheet \u0026amp; Additional Information\u003c\/h3\u003e\n\u003cp\u003eFor detailed technical specifications and application guidelines, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sisf02dn-t1-ge3.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e.\u003c\/p\u003e\n\u003cp\u003eNote: The datasheet was not processed; please search the internet for the part number SISF02DN for more details.\u003c\/p\u003e\n\u003cp\u003eDisclaimers and additional product information are available at \u003ca href=\"https:\/\/www.vishay.com\/doc?91000\" target=\"_blank\"\u003eVishay's official documentation\u003c\/a\u003e.\u003c\/p\u003e","published_at":"2025-08-12T22:35:17+05:30","created_at":"2025-08-12T22:35:17+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["25V","60A","IMPORT_CSV","Mosfets","Power","Semiconductors","VISHA-SEM","WLDM"],"price":11780,"price_min":11780,"price_max":11780,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50613251277117,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"SISF02DN-T1-GE3","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"SISF02DN-T1-GE3","public_title":null,"options":["Default Title"],"price":11780,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"SISF02DN-T1-GE3","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/SISF02DN-T1-GE3_55967953_1065d671.jpg?v=1755018321"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SISF02DN-T1-GE3_55967953_1065d671.jpg?v=1755018321","options":["Title"],"media":[{"alt":null,"id":45806495891773,"position":1,"preview_image":{"aspect_ratio":1.07,"height":200,"width":214,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SISF02DN-T1-GE3_55967953_1065d671.jpg?v=1755018321"},"aspect_ratio":1.07,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SISF02DN-T1-GE3_55967953_1065d671.jpg?v=1755018321","width":214}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eVISHAY SEMICONDUCTOR Power Field-Effect Transistor (SISF02DN-T1-GE3)\u003c\/h3\u003e\n\u003cp\u003eIntroducing the VISHAY SEMICONDUCTOR SISF02DN, a high-performance power MOSFET designed for demanding electronic applications. Manufactured in China, this N-channel MOSFET offers reliable power switching capabilities with a maximum drain current of 60A and a voltage rating of 25V. Ideal for use in battery protection switches, bi-directional switches, and load switches, this device ensures efficient circuit operation in compact, thermally enhanced packages.\u003c\/p\u003e\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003ePowerPAK 1212-8SCD package for compact and thermally efficient design\u003c\/li\u003e\n\u003cli\u003eVery low source-to-source on resistance (R\u003csub\u003eDS(on)\u003c\/sub\u003e) at V\u003csub\u003eGS\u003c\/sub\u003e = 10 V (max. 0.0035 Ω)\u003c\/li\u003e\n\u003cli\u003eIntegrated common-drain dual N-channel MOSFET configuration for bi-directional current flow\u003c\/li\u003e\n\u003cli\u003e100% R\u003csub\u003eg\u003c\/sub\u003e and UIS tested for reliability\u003c\/li\u003e\n\u003cli\u003eOptimized for circuit layouts requiring bi-directional switching\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eConditions\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source breakdown voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e = 0 V, I\u003csub\u003eD\u003c\/sub\u003e = 250 μA\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source threshold voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS(th)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eS1S2\u003c\/sub\u003e = V\u003csub\u003eGS\u003c\/sub\u003e, I\u003csub\u003eD\u003c\/sub\u003e = 250 μA\u003c\/td\u003e\n\u003ctd\u003e1\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e2.3\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOn-state drain current\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eS1S2(on)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eS1S2\u003c\/sub\u003e ≥ 10 V, V\u003csub\u003eGS\u003c\/sub\u003e = 10 V\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e20\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source on-resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003eDS(on)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e = 10 V, I\u003csub\u003eD\u003c\/sub\u003e = 7 A\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e0.0027\u003c\/td\u003e\n\u003ctd\u003e0.0035\u003c\/td\u003e\n\u003ctd\u003eΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum drain current (pulsed)\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eS1S2M\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003et = 100 μs\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e140\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003eTC = 25 °C\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e69.4\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating junction temperature range\u003c\/td\u003e\n\u003ctd\u003eT\u003csub\u003eJ\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-55 to +150\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eThermal and Mechanical Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eTypical\u003c\/th\u003e\n\u003cth\u003eMaximum\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction-to-ambient thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJA\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e19\u003c\/td\u003e\n\u003ctd\u003e24\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction-to-case (drain)\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJC\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e1.4\u003c\/td\u003e\n\u003ctd\u003e1.8\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003ePackage and Compliance\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003ePackage Type: PowerPAK 1212-8SCD\u003c\/li\u003e\n\u003cli\u003eLead (Pb)-free and halogen-free: SiSF02DN-T1-GE3\u003c\/li\u003e\n\u003cli\u003eECCN: EAR99\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eDatasheet \u0026amp; Additional Information\u003c\/h3\u003e\n\u003cp\u003eFor detailed technical specifications and application guidelines, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sisf02dn-t1-ge3.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e.\u003c\/p\u003e\n\u003cp\u003eNote: The datasheet was not processed; please search the internet for the part number SISF02DN for more details.\u003c\/p\u003e\n\u003cp\u003eDisclaimers and additional product information are available at \u003ca href=\"https:\/\/www.vishay.com\/doc?91000\" target=\"_blank\"\u003eVishay's official documentation\u003c\/a\u003e.\u003c\/p\u003e"}
