VISHAY SEMICONDUCTOR Power Field-Effect Transistor (MOSFET) - SISF20DN-T1-GE3
Introducing the VISHAY SEMICONDUCTOR SISF20DN, a high-performance N-channel power MOSFET designed for demanding electronic applications. Manufactured in China, this device offers robust electrical characteristics and thermal efficiency in a compact PowerPAK 1212-8SCD package, supplied on a reel for easy automation and handling.
Key Features
TrenchFET® Gen IV power MOSFET technology for very low source-to-source on resistance
Maximum drain-source voltage (VDS) of 60 V
Continuous drain current (ID) of 52 A at 25°C
Low RDS(on) of 0.013 Ω at VGS = 10 V
Integrated common-drain N-channel MOSFETs in a thermally enhanced package
Optimized for bi-directional current flow, ideal for load switches, battery protection, and 24 V systems
For detailed technical specifications, please refer to the provided datasheet. The datasheet was not processed; please search the internet for the part number for more details.
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{"id":10021791072573,"title":"SISF20DN-T1-GE3","handle":"sisf20dn-t1-ge3","description":"\u003ch3\u003eVISHAY SEMICONDUCTOR Power Field-Effect Transistor (MOSFET) - SISF20DN-T1-GE3\u003c\/h3\u003e\n\u003cp\u003eIntroducing the VISHAY SEMICONDUCTOR SISF20DN, a high-performance N-channel power MOSFET designed for demanding electronic applications. Manufactured in China, this device offers robust electrical characteristics and thermal efficiency in a compact PowerPAK 1212-8SCD package, supplied on a reel for easy automation and handling.\u003c\/p\u003e\n\u003ch3\u003eKey Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eTrenchFET® Gen IV power MOSFET technology for very low source-to-source on resistance\u003c\/li\u003e\n\u003cli\u003eMaximum drain-source voltage (V\u003csub\u003eDS\u003c\/sub\u003e) of 60 V\u003c\/li\u003e\n\u003cli\u003eContinuous drain current (I\u003csub\u003eD\u003c\/sub\u003e) of 52 A at 25°C\u003c\/li\u003e\n\u003cli\u003eLow R\u003csub\u003eDS(on)\u003c\/sub\u003e of 0.013 Ω at V\u003csub\u003eGS\u003c\/sub\u003e = 10 V\u003c\/li\u003e\n\u003cli\u003eIntegrated common-drain N-channel MOSFETs in a thermally enhanced package\u003c\/li\u003e\n\u003cli\u003eOptimized for bi-directional current flow, ideal for load switches, battery protection, and 24 V systems\u003c\/li\u003e\n\u003cli\u003e100% R\u003csub\u003eg\u003c\/sub\u003e and UIS tested for reliability\u003c\/li\u003e\n\u003cli\u003eRoHS compliant, lead-free, halogen-free\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical and Thermal Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eLimit\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e60\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e±20\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current (TJ=25°C)\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e52\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e69.4\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating junction temperature range\u003c\/td\u003e\n\u003ctd\u003eT\u003csub\u003eJ\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-55 to +150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSoldering peak temperature\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e260\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eThermal Resistance Ratings\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eTypical\u003c\/th\u003e\n\u003cth\u003eMaximum\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eJunction-to-ambient\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJA\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e19\u003c\/td\u003e\n\u003ctd\u003e24\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eJunction-to-case (drain)\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJC\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e1.4\u003c\/td\u003e\n\u003ctd\u003e1.8\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eOrdering Information\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003ePackage: PowerPAK 1212-8SCD\u003c\/li\u003e\n\u003cli\u003ePart Number: SISF20DN-T1-GE3\u003c\/li\u003e\n\u003cli\u003eLead (Pb)-free and halogen-free\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eAdditional Details\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003ePart Number: SISF20DN-T1-GE3\u003c\/li\u003e\n\u003cli\u003eManufacturer: VISHAY SEMICONDUCTOR\u003c\/li\u003e\n\u003cli\u003eCountry of Origin: CN\u003c\/li\u003e\n\u003cli\u003eUnit of Measure: EA\u003c\/li\u003e\n\u003cli\u003eECCN: EAR99\u003c\/li\u003e\n\u003cli\u003ePackage Type: REEL\u003c\/li\u003e\n\u003cli\u003eDatasheet: \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sisf20dn-t1-ge3.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eNote\u003c\/h3\u003e\n\u003cp\u003eFor detailed technical specifications, please refer to the provided datasheet. The datasheet was not processed; please search the internet for the part number for more details.\u003c\/p\u003e","published_at":"2025-08-12T22:35:20+05:30","created_at":"2025-08-12T22:35:20+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["52A","60V","IMPORT_CSV","Mosfets","Power","Semiconductors","VISHA-SEM","WLDM"],"price":13998,"price_min":13998,"price_max":13998,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50613251309885,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"SISF20DN-T1-GE3","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"SISF20DN-T1-GE3","public_title":null,"options":["Default Title"],"price":13998,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"SISF20DN-T1-GE3","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/SISF20DN-T1-GE3_55967954_12597aa9.jpg?v=1755018324"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SISF20DN-T1-GE3_55967954_12597aa9.jpg?v=1755018324","options":["Title"],"media":[{"alt":null,"id":45806496350525,"position":1,"preview_image":{"aspect_ratio":1.0,"height":200,"width":200,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SISF20DN-T1-GE3_55967954_12597aa9.jpg?v=1755018324"},"aspect_ratio":1.0,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SISF20DN-T1-GE3_55967954_12597aa9.jpg?v=1755018324","width":200}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eVISHAY SEMICONDUCTOR Power Field-Effect Transistor (MOSFET) - SISF20DN-T1-GE3\u003c\/h3\u003e\n\u003cp\u003eIntroducing the VISHAY SEMICONDUCTOR SISF20DN, a high-performance N-channel power MOSFET designed for demanding electronic applications. Manufactured in China, this device offers robust electrical characteristics and thermal efficiency in a compact PowerPAK 1212-8SCD package, supplied on a reel for easy automation and handling.\u003c\/p\u003e\n\u003ch3\u003eKey Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eTrenchFET® Gen IV power MOSFET technology for very low source-to-source on resistance\u003c\/li\u003e\n\u003cli\u003eMaximum drain-source voltage (V\u003csub\u003eDS\u003c\/sub\u003e) of 60 V\u003c\/li\u003e\n\u003cli\u003eContinuous drain current (I\u003csub\u003eD\u003c\/sub\u003e) of 52 A at 25°C\u003c\/li\u003e\n\u003cli\u003eLow R\u003csub\u003eDS(on)\u003c\/sub\u003e of 0.013 Ω at V\u003csub\u003eGS\u003c\/sub\u003e = 10 V\u003c\/li\u003e\n\u003cli\u003eIntegrated common-drain N-channel MOSFETs in a thermally enhanced package\u003c\/li\u003e\n\u003cli\u003eOptimized for bi-directional current flow, ideal for load switches, battery protection, and 24 V systems\u003c\/li\u003e\n\u003cli\u003e100% R\u003csub\u003eg\u003c\/sub\u003e and UIS tested for reliability\u003c\/li\u003e\n\u003cli\u003eRoHS compliant, lead-free, halogen-free\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical and Thermal Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eLimit\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e60\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e±20\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current (TJ=25°C)\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e52\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e69.4\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating junction temperature range\u003c\/td\u003e\n\u003ctd\u003eT\u003csub\u003eJ\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-55 to +150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSoldering peak temperature\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e260\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eThermal Resistance Ratings\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eTypical\u003c\/th\u003e\n\u003cth\u003eMaximum\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eJunction-to-ambient\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJA\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e19\u003c\/td\u003e\n\u003ctd\u003e24\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eJunction-to-case (drain)\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJC\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e1.4\u003c\/td\u003e\n\u003ctd\u003e1.8\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eOrdering Information\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003ePackage: PowerPAK 1212-8SCD\u003c\/li\u003e\n\u003cli\u003ePart Number: SISF20DN-T1-GE3\u003c\/li\u003e\n\u003cli\u003eLead (Pb)-free and halogen-free\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eAdditional Details\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003ePart Number: SISF20DN-T1-GE3\u003c\/li\u003e\n\u003cli\u003eManufacturer: VISHAY SEMICONDUCTOR\u003c\/li\u003e\n\u003cli\u003eCountry of Origin: CN\u003c\/li\u003e\n\u003cli\u003eUnit of Measure: EA\u003c\/li\u003e\n\u003cli\u003eECCN: EAR99\u003c\/li\u003e\n\u003cli\u003ePackage Type: REEL\u003c\/li\u003e\n\u003cli\u003eDatasheet: \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sisf20dn-t1-ge3.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eNote\u003c\/h3\u003e\n\u003cp\u003eFor detailed technical specifications, please refer to the provided datasheet. The datasheet was not processed; please search the internet for the part number for more details.\u003c\/p\u003e"}
I'm particularly impressed with how carefully the header pins are packed for the RP2350-PiZero, they arrived in perfect condition without any bent pins, which has been a persistent issue with other competitors. This attention to packaging detail really stands out.
I also received the latest A4 revision of the RP2350, which shows you maintain current inventory, that's really valuable for customers who want the most up to date components.
The delivery was quick and hassle free throughout. I'll definitely be recommending you to others!
App feedback: The discounts offered through the app are a nice bonus, but the component search function could be improved to match the ease of use on the website version. The rest of the app functions work well.
