VISHAY SEMICONDUCTOR Power Field-Effect Transistor (MOSFET) - SISHA12ADN-T1-GE3
Enhance your electronic designs with the VISHAY SEMICONDUCTOR SISHA12ADN-T1-GE3, a high-performance N-channel power MOSFET optimized for switch mode power supplies, personal computers, servers, telecom bricks, VRMs, and POL applications. This device features a robust PowerPAK 1212-8SH package and is designed for reliable operation in demanding environments.
Key Features
Power MOSFET with trenchFET [®] Gen IV technology for superior efficiency
Maximum drain-source voltage (VDS) of 30 V
Continuous drain current (ID) of 25 A at 25°C
Low RDS(on) of 0.0043 Ω at VGS = 10 V, 0.0060 Ω at VGS = 4.5 V
Pulsed drain current (IDM) of 80 A
Maximum power dissipation of 28 W at 25°C
RoHS compliant, lead (Pb)-free, halogen-free package
Electrical Specifications
Parameter
Symbol
Limit
Unit
Drain-source voltage
VDS
30
V
Gate-source voltage
VGS
+20, -16
V
Continuous drain current (TJ=25°C)
ID
25
A
Maximum power dissipation
PD
28
W
Operating junction temperature range
TJ
-55 to +150
°C
Soldering peak temperature
260
°C
Package and Packaging
Package Type: PowerPAK 1212-8SH
Reel packaging for automated assembly
Additional Details
RoHS compliant
ECCN: EAR99
Part Number: SISHA12ADN-T1-GE3
Manufacturer: VISHAY SEMICONDUCTOR
Country of Origin: CN
Unit of Measure: EA
Datasheet & Resources
For detailed technical information, refer to the datasheet. Additional resources and solder profile guidelines can be found at VISHAY and solder profile information.
Disclaimer
Note: The datasheet was not processed. Please search the internet for the part number SISHA12ADN-T1-GE3 for more detailed specifications and application information.
I'm particularly impressed with how carefully the header pins are packed for the RP2350-PiZero, they arrived in perfect condition without any bent pins, which has been a persistent issue with other competitors. This attention to packaging detail really stands out.
I also received the latest A4 revision of the RP2350, which shows you maintain current inventory, that's really valuable for customers who want the most up to date components.
The delivery was quick and hassle free throughout. I'll definitely be recommending you to others!
App feedback: The discounts offered through the app are a nice bonus, but the component search function could be improved to match the ease of use on the website version. The rest of the app functions work well.
{"id":10021791138109,"title":"SISHA12ADN-T1-GE3","handle":"sisha12adn-t1-ge3","description":"\u003ch3\u003eVISHAY SEMICONDUCTOR Power Field-Effect Transistor (MOSFET) - SISHA12ADN-T1-GE3\u003c\/h3\u003e\n\u003cp\u003eEnhance your electronic designs with the VISHAY SEMICONDUCTOR SISHA12ADN-T1-GE3, a high-performance N-channel power MOSFET optimized for switch mode power supplies, personal computers, servers, telecom bricks, VRMs, and POL applications. This device features a robust PowerPAK 1212-8SH package and is designed for reliable operation in demanding environments.\u003c\/p\u003e\n\u003ch3\u003eKey Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003ePower MOSFET with trenchFET [®] Gen IV technology for superior efficiency\u003c\/li\u003e\n\u003cli\u003eMaximum drain-source voltage (V\u003csub\u003eDS\u003c\/sub\u003e) of 30 V\u003c\/li\u003e\n\u003cli\u003eContinuous drain current (I\u003csub\u003eD\u003c\/sub\u003e) of 25 A at 25°C\u003c\/li\u003e\n\u003cli\u003eLow R\u003csub\u003eDS(on)\u003c\/sub\u003e of 0.0043 Ω at V\u003csub\u003eGS\u003c\/sub\u003e = 10 V, 0.0060 Ω at V\u003csub\u003eGS\u003c\/sub\u003e = 4.5 V\u003c\/li\u003e\n\u003cli\u003ePulsed drain current (I\u003csub\u003eDM\u003c\/sub\u003e) of 80 A\u003c\/li\u003e\n\u003cli\u003eMaximum power dissipation of 28 W at 25°C\u003c\/li\u003e\n\u003cli\u003eRoHS compliant, lead (Pb)-free, halogen-free package\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eLimit\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e30\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e+20, -16\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current (TJ=25°C)\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e25\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e28\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating junction temperature range\u003c\/td\u003e\n\u003ctd\u003eT\u003csub\u003eJ\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-55 to +150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSoldering peak temperature\u003c\/td\u003e\n\u003ctd\u003e260\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003ePackage and Packaging\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003ePackage Type: PowerPAK 1212-8SH\u003c\/li\u003e\n\u003cli\u003eReel packaging for automated assembly\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eAdditional Details\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eRoHS compliant\u003c\/li\u003e\n\u003cli\u003eECCN: EAR99\u003c\/li\u003e\n\u003cli\u003ePart Number: SISHA12ADN-T1-GE3\u003c\/li\u003e\n\u003cli\u003eManufacturer: VISHAY SEMICONDUCTOR\u003c\/li\u003e\n\u003cli\u003eCountry of Origin: CN\u003c\/li\u003e\n\u003cli\u003eUnit of Measure: EA\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eDatasheet \u0026amp; Resources\u003c\/h3\u003e\n\u003cp\u003eFor detailed technical information, refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sisha12adn-t1-ge3.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e. Additional resources and solder profile guidelines can be found at \u003ca href=\"http:\/\/www.vishay.com\" target=\"_blank\"\u003eVISHAY\u003c\/a\u003e and \u003ca href=\"http:\/\/www.vishay.com\/ppg?73257\" target=\"_blank\"\u003esolder profile information\u003c\/a\u003e.\u003c\/p\u003e\n\u003ch3\u003eDisclaimer\u003c\/h3\u003e\n\u003cp\u003eNote: The datasheet was not processed. Please search the internet for the part number SISHA12ADN-T1-GE3 for more detailed specifications and application information.\u003c\/p\u003e","published_at":"2025-08-12T22:35:23+05:30","created_at":"2025-08-12T22:35:23+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["25A","30V","IMPORT_CSV","Mosfets","Power","Semiconductors","VISHA-SEM","WLDM"],"price":5821,"price_min":5821,"price_max":5821,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50613251375421,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"SISHA12ADN-T1-GE3","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"SISHA12ADN-T1-GE3","public_title":null,"options":["Default Title"],"price":5821,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"SISHA12ADN-T1-GE3","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/SISHA12ADN-T1-GE3_55967955_c4e83a61.jpg?v=1755018327"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SISHA12ADN-T1-GE3_55967955_c4e83a61.jpg?v=1755018327","options":["Title"],"media":[{"alt":null,"id":45806496907581,"position":1,"preview_image":{"aspect_ratio":1.07,"height":200,"width":214,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SISHA12ADN-T1-GE3_55967955_c4e83a61.jpg?v=1755018327"},"aspect_ratio":1.07,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SISHA12ADN-T1-GE3_55967955_c4e83a61.jpg?v=1755018327","width":214}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eVISHAY SEMICONDUCTOR Power Field-Effect Transistor (MOSFET) - SISHA12ADN-T1-GE3\u003c\/h3\u003e\n\u003cp\u003eEnhance your electronic designs with the VISHAY SEMICONDUCTOR SISHA12ADN-T1-GE3, a high-performance N-channel power MOSFET optimized for switch mode power supplies, personal computers, servers, telecom bricks, VRMs, and POL applications. This device features a robust PowerPAK 1212-8SH package and is designed for reliable operation in demanding environments.\u003c\/p\u003e\n\u003ch3\u003eKey Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003ePower MOSFET with trenchFET [®] Gen IV technology for superior efficiency\u003c\/li\u003e\n\u003cli\u003eMaximum drain-source voltage (V\u003csub\u003eDS\u003c\/sub\u003e) of 30 V\u003c\/li\u003e\n\u003cli\u003eContinuous drain current (I\u003csub\u003eD\u003c\/sub\u003e) of 25 A at 25°C\u003c\/li\u003e\n\u003cli\u003eLow R\u003csub\u003eDS(on)\u003c\/sub\u003e of 0.0043 Ω at V\u003csub\u003eGS\u003c\/sub\u003e = 10 V, 0.0060 Ω at V\u003csub\u003eGS\u003c\/sub\u003e = 4.5 V\u003c\/li\u003e\n\u003cli\u003ePulsed drain current (I\u003csub\u003eDM\u003c\/sub\u003e) of 80 A\u003c\/li\u003e\n\u003cli\u003eMaximum power dissipation of 28 W at 25°C\u003c\/li\u003e\n\u003cli\u003eRoHS compliant, lead (Pb)-free, halogen-free package\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eLimit\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e30\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e+20, -16\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current (TJ=25°C)\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e25\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e28\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating junction temperature range\u003c\/td\u003e\n\u003ctd\u003eT\u003csub\u003eJ\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-55 to +150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSoldering peak temperature\u003c\/td\u003e\n\u003ctd\u003e260\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003ePackage and Packaging\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003ePackage Type: PowerPAK 1212-8SH\u003c\/li\u003e\n\u003cli\u003eReel packaging for automated assembly\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eAdditional Details\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eRoHS compliant\u003c\/li\u003e\n\u003cli\u003eECCN: EAR99\u003c\/li\u003e\n\u003cli\u003ePart Number: SISHA12ADN-T1-GE3\u003c\/li\u003e\n\u003cli\u003eManufacturer: VISHAY SEMICONDUCTOR\u003c\/li\u003e\n\u003cli\u003eCountry of Origin: CN\u003c\/li\u003e\n\u003cli\u003eUnit of Measure: EA\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eDatasheet \u0026amp; Resources\u003c\/h3\u003e\n\u003cp\u003eFor detailed technical information, refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sisha12adn-t1-ge3.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e. Additional resources and solder profile guidelines can be found at \u003ca href=\"http:\/\/www.vishay.com\" target=\"_blank\"\u003eVISHAY\u003c\/a\u003e and \u003ca href=\"http:\/\/www.vishay.com\/ppg?73257\" target=\"_blank\"\u003esolder profile information\u003c\/a\u003e.\u003c\/p\u003e\n\u003ch3\u003eDisclaimer\u003c\/h3\u003e\n\u003cp\u003eNote: The datasheet was not processed. Please search the internet for the part number SISHA12ADN-T1-GE3 for more detailed specifications and application information.\u003c\/p\u003e"}
