The DIODES ZETEX DMP2021UTS-13 is a high-performance P-Channel enhancement mode MOSFET designed for efficient power management applications. Manufactured in China, this device offers low on-resistance and superior switching capabilities, making it ideal for battery management, power management functions, and DC-DC converters.
Low Gate Threshold Voltage for efficient switching
Low On-Resistance (RDS(ON)) — 16mΩ at VGS = -4.5V, 22mΩ at VGS = -2.5V
ESD Protected Gate for enhanced durability
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free ("Green" Device)
Qualified to AEC-Q101 standards for high reliability
Package: TSSOP-8 with molded plastic, UL 94V-0 flammability rating
Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Conditions
Drain-Source Breakdown Voltage
BVDSS
-20
—
—
V
VGS = 0V, ID = -250μA
Gate-Source Leakage
IGSS
—
—
±10
μA
VGS = ±8V, VDS = 0V
Gate Threshold Voltage
VGS(TH)
-0.35
—
-1.0
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS(ON)
—
12
16
mΩ
VGS = -4.5V, ID = -4.5A
Thermal and Mechanical Data
Characteristic
Symbol
Value
Unit
Total Power Dissipation
PD
0.9
W
Thermal Resistance, Junction to Ambient
RθJA
146
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Application and Usage
This MOSFET is optimized for high-efficiency power management, including battery management, DC-DC conversion, and general power switching applications. Its low RDS(ON) and robust design ensure reliable performance under demanding conditions.
For detailed electrical characteristics and application notes, please refer to the full datasheet.
Note: Datasheet was not processed, please search the internet for the part number for more details.
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{"id":10013474390333,"title":"DMP2021UTS-13","handle":"dmp2021uts-13","description":"\u003ch3\u003eDIODES ZETEX DMP2021UTS-13 P-CHANNEL MOSFET\u003c\/h3\u003e\n\u003cp\u003eThe DIODES ZETEX DMP2021UTS-13 is a high-performance P-Channel enhancement mode MOSFET designed for efficient power management applications. Manufactured in China, this device offers low on-resistance and superior switching capabilities, making it ideal for battery management, power management functions, and DC-DC converters.\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003ePart Number:\u003c\/strong\u003e DMP2021UTS-13\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eManufacturer:\u003c\/strong\u003e DIODES ZETEX\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eUnit of Measure:\u003c\/strong\u003e Each (EA)\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePackage Type:\u003c\/strong\u003e TAPE (TSSOP-8)\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eDatasheet:\u003c\/strong\u003e \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-di\/di-dmp2021uts-13.pdf\" target=\"_blank\" rel=\"noopener noreferrer\"\u003eDownload Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eLow Gate Threshold Voltage for efficient switching\u003c\/li\u003e\n\u003cli\u003eLow On-Resistance (RDS(ON)) — 16mΩ at VGS = -4.5V, 22mΩ at VGS = -2.5V\u003c\/li\u003e\n\u003cli\u003eESD Protected Gate for enhanced durability\u003c\/li\u003e\n\u003cli\u003eTotally Lead-Free \u0026amp; Fully RoHS Compliant\u003c\/li\u003e\n\u003cli\u003eHalogen and Antimony Free (\"Green\" Device)\u003c\/li\u003e\n\u003cli\u003eQualified to AEC-Q101 standards for high reliability\u003c\/li\u003e\n\u003cli\u003ePackage: TSSOP-8 with molded plastic, UL 94V-0 flammability rating\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical Characteristics\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\" width=\"100%\"\u003e\n\u003ctr\u003e\n\u003cth\u003eCharacteristic\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003cth\u003eConditions\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source Breakdown Voltage\u003c\/td\u003e\n\u003ctd\u003eBVDSS\u003c\/td\u003e\n\u003ctd\u003e-20\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003ctd\u003eVGS = 0V, ID = -250μA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-Source Leakage\u003c\/td\u003e\n\u003ctd\u003eIGSS\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e±10\u003c\/td\u003e\n\u003ctd\u003eμA\u003c\/td\u003e\n\u003ctd\u003eVGS = ±8V, VDS = 0V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate Threshold Voltage\u003c\/td\u003e\n\u003ctd\u003eVGS(TH)\u003c\/td\u003e\n\u003ctd\u003e-0.35\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e-1.0\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003ctd\u003eVDS = VGS, ID = -250μA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eStatic Drain-Source On-Resistance\u003c\/td\u003e\n\u003ctd\u003eRDS(ON)\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e12\u003c\/td\u003e\n\u003ctd\u003e16\u003c\/td\u003e\n\u003ctd\u003emΩ\u003c\/td\u003e\n\u003ctd\u003eVGS = -4.5V, ID = -4.5A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eThermal and Mechanical Data\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\" width=\"100%\"\u003e\n\u003ctr\u003e\n\u003cth\u003eCharacteristic\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eValue\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTotal Power Dissipation\u003c\/td\u003e\n\u003ctd\u003ePD\u003c\/td\u003e\n\u003ctd\u003e0.9\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eThermal Resistance, Junction to Ambient\u003c\/td\u003e\n\u003ctd\u003eRθJA\u003c\/td\u003e\n\u003ctd\u003e146\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating and Storage Temperature Range\u003c\/td\u003e\n\u003ctd\u003eTJ, TSTG\u003c\/td\u003e\n\u003ctd\u003e-55 to +150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eApplication and Usage\u003c\/h3\u003e\n\u003cp\u003eThis MOSFET is optimized for high-efficiency power management, including battery management, DC-DC conversion, and general power switching applications. Its low RDS(ON) and robust design ensure reliable performance under demanding conditions.\u003c\/p\u003e\n\u003cp\u003eFor detailed electrical characteristics and application notes, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-di\/di-dmp2021uts-13.pdf\" target=\"_blank\" rel=\"noopener noreferrer\"\u003efull datasheet\u003c\/a\u003e.\u003c\/p\u003e\n\u003cp\u003e\u003cem\u003eNote: Datasheet was not processed, please search the internet for the part number for more details.\u003c\/em\u003e\u003c\/p\u003e","published_at":"2025-08-10T17:34:24+05:30","created_at":"2025-08-10T17:34:24+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["18A","20V","CH","DIODE","IMPORT_CSV","Mosfets","Semiconductors","WLDM"],"price":5405,"price_min":5405,"price_max":5405,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50578435932477,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"DMP2021UTS-13","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"DMP2021UTS-13","public_title":null,"options":["Default Title"],"price":5405,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"DMP2021UTS-13","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/DMP2021UTS-13_55984094_a0209642.jpg?v=1754827468"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/DMP2021UTS-13_55984094_a0209642.jpg?v=1754827468","options":["Title"],"media":[{"alt":null,"id":45763371598141,"position":1,"preview_image":{"aspect_ratio":1.0,"height":200,"width":200,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/DMP2021UTS-13_55984094_a0209642.jpg?v=1754827468"},"aspect_ratio":1.0,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/DMP2021UTS-13_55984094_a0209642.jpg?v=1754827468","width":200}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eDIODES ZETEX DMP2021UTS-13 P-CHANNEL MOSFET\u003c\/h3\u003e\n\u003cp\u003eThe DIODES ZETEX DMP2021UTS-13 is a high-performance P-Channel enhancement mode MOSFET designed for efficient power management applications. Manufactured in China, this device offers low on-resistance and superior switching capabilities, making it ideal for battery management, power management functions, and DC-DC converters.\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003ePart Number:\u003c\/strong\u003e DMP2021UTS-13\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eManufacturer:\u003c\/strong\u003e DIODES ZETEX\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eUnit of Measure:\u003c\/strong\u003e Each (EA)\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePackage Type:\u003c\/strong\u003e TAPE (TSSOP-8)\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eDatasheet:\u003c\/strong\u003e \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-di\/di-dmp2021uts-13.pdf\" target=\"_blank\" rel=\"noopener noreferrer\"\u003eDownload Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eLow Gate Threshold Voltage for efficient switching\u003c\/li\u003e\n\u003cli\u003eLow On-Resistance (RDS(ON)) — 16mΩ at VGS = -4.5V, 22mΩ at VGS = -2.5V\u003c\/li\u003e\n\u003cli\u003eESD Protected Gate for enhanced durability\u003c\/li\u003e\n\u003cli\u003eTotally Lead-Free \u0026amp; Fully RoHS Compliant\u003c\/li\u003e\n\u003cli\u003eHalogen and Antimony Free (\"Green\" Device)\u003c\/li\u003e\n\u003cli\u003eQualified to AEC-Q101 standards for high reliability\u003c\/li\u003e\n\u003cli\u003ePackage: TSSOP-8 with molded plastic, UL 94V-0 flammability rating\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical Characteristics\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\" width=\"100%\"\u003e\n\u003ctr\u003e\n\u003cth\u003eCharacteristic\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003cth\u003eConditions\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source Breakdown Voltage\u003c\/td\u003e\n\u003ctd\u003eBVDSS\u003c\/td\u003e\n\u003ctd\u003e-20\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003ctd\u003eVGS = 0V, ID = -250μA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-Source Leakage\u003c\/td\u003e\n\u003ctd\u003eIGSS\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e±10\u003c\/td\u003e\n\u003ctd\u003eμA\u003c\/td\u003e\n\u003ctd\u003eVGS = ±8V, VDS = 0V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate Threshold Voltage\u003c\/td\u003e\n\u003ctd\u003eVGS(TH)\u003c\/td\u003e\n\u003ctd\u003e-0.35\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e-1.0\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003ctd\u003eVDS = VGS, ID = -250μA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eStatic Drain-Source On-Resistance\u003c\/td\u003e\n\u003ctd\u003eRDS(ON)\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e12\u003c\/td\u003e\n\u003ctd\u003e16\u003c\/td\u003e\n\u003ctd\u003emΩ\u003c\/td\u003e\n\u003ctd\u003eVGS = -4.5V, ID = -4.5A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eThermal and Mechanical Data\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\" width=\"100%\"\u003e\n\u003ctr\u003e\n\u003cth\u003eCharacteristic\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eValue\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTotal Power Dissipation\u003c\/td\u003e\n\u003ctd\u003ePD\u003c\/td\u003e\n\u003ctd\u003e0.9\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eThermal Resistance, Junction to Ambient\u003c\/td\u003e\n\u003ctd\u003eRθJA\u003c\/td\u003e\n\u003ctd\u003e146\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating and Storage Temperature Range\u003c\/td\u003e\n\u003ctd\u003eTJ, TSTG\u003c\/td\u003e\n\u003ctd\u003e-55 to +150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eApplication and Usage\u003c\/h3\u003e\n\u003cp\u003eThis MOSFET is optimized for high-efficiency power management, including battery management, DC-DC conversion, and general power switching applications. Its low RDS(ON) and robust design ensure reliable performance under demanding conditions.\u003c\/p\u003e\n\u003cp\u003eFor detailed electrical characteristics and application notes, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-di\/di-dmp2021uts-13.pdf\" target=\"_blank\" rel=\"noopener noreferrer\"\u003efull datasheet\u003c\/a\u003e.\u003c\/p\u003e\n\u003cp\u003e\u003cem\u003eNote: Datasheet was not processed, please search the internet for the part number for more details.\u003c\/em\u003e\u003c\/p\u003e"}
Unfortunately I havent tested the 5G, Only difficult part was connecting antennas. But everything is good, by default it runs on Qualcom's QMI mode, Had to switch to MBIM and it works good with Windows. Planning to run with OpenWRT soon.
