Part Number: DMT10H072LFDF
Manufacturer: DIODES ZETEX
Country of Origin: CN
UOM: EA
ECCN: EAR99
Package Type: U-DFN2020-6 (Type F)
Datasheet: Download Datasheet
This advanced generation N-channel MOSFET is engineered to deliver minimal on-state resistance (RDS(on)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. Its compact U-DFN2020-6 package with a 0.6mm profile is suitable for low-profile designs and space-constrained environments.
Key Features and Benefits
Low Profile: 0.6mm height for low-profile applications
Compact PCB footprint: 4mm
Low On-Resistance: RDS(on) max 62mΩ at VGS = 10V
High Reliability: 100% unclamped inductive switching (UIS) tested in production
RoHS & Fully Lead-Free: Compliant with EU directives, halogen and antimony free
Electrical Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Drain-Source Breakdown Voltage
BVDSS
100
—
—
V
VGS = 0V, ID = 250μA
Continuous Drain Current
ID
3.2
4
—
A
TA = +70°C, VGS = 10V
Maximum Body Diode Continuous Current
IS
1.6
—
—
A
Gate Threshold Voltage
VGS(TH)
1
—
3
V
Static Drain-Source On-Resistance
RDS(on)
47
62
—
mΩ
VGS = 10V, ID = 4.5A
Thermal and Mechanical Data
Characteristic
Symbol
Value
Unit
Total Power Dissipation
PD
0.8
W
TA = +25°C
Thermal Resistance, Junction to Ambient
Rθ>JA
149
°C/W
Package Material
Green Molded Plastic
Flammability Rating
94V-0
Moisture Sensitivity Level
Level 1
Lead Finish
NiPdAu over Copper Leadframe
Applications
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers for Relays, Solenoids, Lamps, Displays, Memories, Transistors, etc.
For more detailed specifications, please refer to the full datasheet.
Note: The datasheet was not processed; please search the internet for the part number for more details.
Unfortunately I havent tested the 5G, Only difficult part was connecting antennas. But everything is good, by default it runs on Qualcom's QMI mode, Had to switch to MBIM and it works good with Windows. Planning to run with OpenWRT soon.
{"id":10013474455869,"title":"DMT10H072LFDF-7","handle":"dmt10h072lfdf-7","description":"\u003ch3\u003eDIODES ZETEX DMT10H072LFDF - 100V N-Channel Enhancement Mode MOSFET\u003c\/h3\u003e\n\u003cp\u003ePart Number: DMT10H072LFDF\u003cbr\u003e\nManufacturer: DIODES ZETEX\u003cbr\u003e\nCountry of Origin: CN\u003cbr\u003e\nUOM: EA\u003cbr\u003e\nECCN: EAR99\u003cbr\u003e\nPackage Type: U-DFN2020-6 (Type F)\u003cbr\u003e\nDatasheet: \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-di\/di-dmt10h072lfdf-7.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\u003c\/p\u003e\n\n\u003cp\u003eThis advanced generation N-channel MOSFET is engineered to deliver minimal on-state resistance (R\u003csub\u003eDS(on)\u003c\/sub\u003e) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. Its compact U-DFN2020-6 package with a 0.6mm profile is suitable for low-profile designs and space-constrained environments.\u003c\/p\u003e\n\n\u003ch3\u003eKey Features and Benefits\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eLow Profile: 0.6mm height for low-profile applications\u003c\/li\u003e\n\u003cli\u003eCompact PCB footprint: 4mm\u003c\/li\u003e\n\u003cli\u003eLow On-Resistance: R\u003csub\u003eDS(on)\u003c\/sub\u003e max 62mΩ at V\u003csub\u003eGS\u003c\/sub\u003e = 10V\u003c\/li\u003e\n\u003cli\u003eHigh Reliability: 100% unclamped inductive switching (UIS) tested in production\u003c\/li\u003e\n\u003cli\u003eRoHS \u0026amp; Fully Lead-Free: Compliant with EU directives, halogen and antimony free\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003ch3\u003eElectrical Characteristics\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003cth\u003eConditions\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source Breakdown Voltage\u003c\/td\u003e\n\u003ctd\u003eBVDSS\u003c\/td\u003e\n\u003ctd\u003e100\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e = 0V, I\u003csub\u003eD\u003c\/sub\u003e = 250μA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous Drain Current\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e3.2\u003c\/td\u003e\n\u003ctd\u003e4\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003ctd\u003eTA = +70°C, V\u003csub\u003eGS\u003c\/sub\u003e = 10V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Body Diode Continuous Current\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e1.6\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate Threshold Voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS(TH)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e1\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e3\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eStatic Drain-Source On-Resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003eDS(on)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e47\u003c\/td\u003e\n\u003ctd\u003e62\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003emΩ\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e = 10V, I\u003csub\u003eD\u003c\/sub\u003e = 4.5A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eThermal and Mechanical Data\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eCharacteristic\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eValue\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTotal Power Dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e0.8\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003ctd\u003eTA = +25°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eThermal Resistance, Junction to Ambient\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003eθ\u0026gt;JA\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e149\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePackage Material\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003eGreen Molded Plastic\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eFlammability Rating\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e94V-0\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMoisture Sensitivity Level\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003eLevel 1\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eLead Finish\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003eNiPdAu over Copper Leadframe\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eApplications\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003ePower Management Functions\u003c\/li\u003e\n\u003cli\u003eBattery Operated Systems and Solid-State Relays\u003c\/li\u003e\n\u003cli\u003eDrivers for Relays, Solenoids, Lamps, Displays, Memories, Transistors, etc.\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003cp\u003eFor more detailed specifications, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-di\/di-dmt10h072lfdf-7.pdf\" target=\"_blank\"\u003efull datasheet\u003c\/a\u003e.\u003c\/p\u003e\n\n\u003cp\u003eNote: The datasheet was not processed; please search the internet for the part number for more details.\u003c\/p\u003e","published_at":"2025-08-10T17:34:29+05:30","created_at":"2025-08-10T17:34:29+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["100V","DFN2020","DIODE","IMPORT_CSV","Mosfets","Semiconductors","WLDM"],"price":5959,"price_min":5959,"price_max":5959,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50578435998013,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"DMT10H072LFDF-7","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"DMT10H072LFDF-7","public_title":null,"options":["Default Title"],"price":5959,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"DMT10H072LFDF-7","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/DMT10H072LFDF-7_55984096_f31613f9.jpg?v=1754827473"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/DMT10H072LFDF-7_55984096_f31613f9.jpg?v=1754827473","options":["Title"],"media":[{"alt":null,"id":45763372745021,"position":1,"preview_image":{"aspect_ratio":1.0,"height":200,"width":200,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/DMT10H072LFDF-7_55984096_f31613f9.jpg?v=1754827473"},"aspect_ratio":1.0,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/DMT10H072LFDF-7_55984096_f31613f9.jpg?v=1754827473","width":200}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eDIODES ZETEX DMT10H072LFDF - 100V N-Channel Enhancement Mode MOSFET\u003c\/h3\u003e\n\u003cp\u003ePart Number: DMT10H072LFDF\u003cbr\u003e\nManufacturer: DIODES ZETEX\u003cbr\u003e\nCountry of Origin: CN\u003cbr\u003e\nUOM: EA\u003cbr\u003e\nECCN: EAR99\u003cbr\u003e\nPackage Type: U-DFN2020-6 (Type F)\u003cbr\u003e\nDatasheet: \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-di\/di-dmt10h072lfdf-7.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\u003c\/p\u003e\n\n\u003cp\u003eThis advanced generation N-channel MOSFET is engineered to deliver minimal on-state resistance (R\u003csub\u003eDS(on)\u003c\/sub\u003e) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. Its compact U-DFN2020-6 package with a 0.6mm profile is suitable for low-profile designs and space-constrained environments.\u003c\/p\u003e\n\n\u003ch3\u003eKey Features and Benefits\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eLow Profile: 0.6mm height for low-profile applications\u003c\/li\u003e\n\u003cli\u003eCompact PCB footprint: 4mm\u003c\/li\u003e\n\u003cli\u003eLow On-Resistance: R\u003csub\u003eDS(on)\u003c\/sub\u003e max 62mΩ at V\u003csub\u003eGS\u003c\/sub\u003e = 10V\u003c\/li\u003e\n\u003cli\u003eHigh Reliability: 100% unclamped inductive switching (UIS) tested in production\u003c\/li\u003e\n\u003cli\u003eRoHS \u0026amp; Fully Lead-Free: Compliant with EU directives, halogen and antimony free\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003ch3\u003eElectrical Characteristics\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003cth\u003eConditions\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source Breakdown Voltage\u003c\/td\u003e\n\u003ctd\u003eBVDSS\u003c\/td\u003e\n\u003ctd\u003e100\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e = 0V, I\u003csub\u003eD\u003c\/sub\u003e = 250μA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous Drain Current\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e3.2\u003c\/td\u003e\n\u003ctd\u003e4\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003ctd\u003eTA = +70°C, V\u003csub\u003eGS\u003c\/sub\u003e = 10V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Body Diode Continuous Current\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e1.6\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate Threshold Voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS(TH)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e1\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e3\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eStatic Drain-Source On-Resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003eDS(on)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e47\u003c\/td\u003e\n\u003ctd\u003e62\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003emΩ\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e = 10V, I\u003csub\u003eD\u003c\/sub\u003e = 4.5A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eThermal and Mechanical Data\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eCharacteristic\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eValue\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTotal Power Dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e0.8\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003ctd\u003eTA = +25°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eThermal Resistance, Junction to Ambient\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003eθ\u0026gt;JA\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e149\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePackage Material\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003eGreen Molded Plastic\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eFlammability Rating\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e94V-0\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMoisture Sensitivity Level\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003eLevel 1\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eLead Finish\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003eNiPdAu over Copper Leadframe\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eApplications\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003ePower Management Functions\u003c\/li\u003e\n\u003cli\u003eBattery Operated Systems and Solid-State Relays\u003c\/li\u003e\n\u003cli\u003eDrivers for Relays, Solenoids, Lamps, Displays, Memories, Transistors, etc.\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003cp\u003eFor more detailed specifications, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-di\/di-dmt10h072lfdf-7.pdf\" target=\"_blank\"\u003efull datasheet\u003c\/a\u003e.\u003c\/p\u003e\n\n\u003cp\u003eNote: The datasheet was not processed; please search the internet for the part number for more details.\u003c\/p\u003e"}
