VISHAY Power Field-Effect Transistor IRFS11N50APBF
Enhance your electronic projects with the VISHAY IRFS11N50APBF Power MOSFET, a high-performance N-channel device designed for demanding power switching applications. Manufactured in China, this RoHS-compliant semiconductor offers reliable operation and robust features suitable for switch mode power supplies, uninterruptible power supplies, and high-speed power switching systems.
Product Features
Low gate charge (Qg) for simplified drive requirements
Enhanced gate, avalanche, and dynamic dV/dt ruggedness
Fully characterized capacitance with specified avalanche voltage and current
Effective output capacitance (Coss eff.) for efficient switching
This product is RoHS compliant. For more information, please visit VISHAY. The datasheet provides comprehensive details about this part. If additional information is needed, please search the internet for the part number IRFS11N50APBF.
I'm particularly impressed with how carefully the header pins are packed for the RP2350-PiZero, they arrived in perfect condition without any bent pins, which has been a persistent issue with other competitors. This attention to packaging detail really stands out.
I also received the latest A4 revision of the RP2350, which shows you maintain current inventory, that's really valuable for customers who want the most up to date components.
The delivery was quick and hassle free throughout. I'll definitely be recommending you to others!
App feedback: The discounts offered through the app are a nice bonus, but the component search function could be improved to match the ease of use on the website version. The rest of the app functions work well.
{"id":10022087229757,"title":"IRFS11N50APBF","handle":"irfs11n50apbf","description":"\u003ch3\u003eVISHAY Power Field-Effect Transistor IRFS11N50APBF\u003c\/h3\u003e\n\u003cp\u003eEnhance your electronic projects with the VISHAY IRFS11N50APBF Power MOSFET, a high-performance N-channel device designed for demanding power switching applications. Manufactured in China, this RoHS-compliant semiconductor offers reliable operation and robust features suitable for switch mode power supplies, uninterruptible power supplies, and high-speed power switching systems.\u003c\/p\u003e\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eLow gate charge (Qg) for simplified drive requirements\u003c\/li\u003e\n\u003cli\u003eEnhanced gate, avalanche, and dynamic dV\/dt ruggedness\u003c\/li\u003e\n\u003cli\u003eFully characterized capacitance with specified avalanche voltage and current\u003c\/li\u003e\n\u003cli\u003eEffective output capacitance (Coss eff.) for efficient switching\u003c\/li\u003e\n\u003cli\u003ePackage Type: TUBE (D2PAK\/TO-263)\u003c\/li\u003e\n\u003cli\u003eRoHS compliant\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eKey Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eLimits\u003c\/th\u003e\n\u003cth\u003eUnits\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eVDS\u003c\/td\u003e\n\u003ctd\u003e500\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eVGS\u003c\/td\u003e\n\u003ctd\u003e±30\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous Drain Current at 25°C\u003c\/td\u003e\n\u003ctd\u003eID\u003c\/td\u003e\n\u003ctd\u003e11\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous Drain Current at 100°C\u003c\/td\u003e\n\u003ctd\u003eID\u003c\/td\u003e\n\u003ctd\u003e7.0\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePulsed Drain Current\u003c\/td\u003e\n\u003ctd\u003eIDM\u003c\/td\u003e\n\u003ctd\u003e44\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Power Dissipation\u003c\/td\u003e\n\u003ctd\u003ePD\u003c\/td\u003e\n\u003ctd\u003e170\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Junction-to-Case Resistance\u003c\/td\u003e\n\u003ctd\u003eRthJC\u003c\/td\u003e\n\u003ctd\u003e0.75\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Junction-to-Ambient Resistance\u003c\/td\u003e\n\u003ctd\u003eRthJA\u003c\/td\u003e\n\u003ctd\u003e62\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source Breakdown Voltage\u003c\/td\u003e\n\u003ctd\u003eVDS\u003c\/td\u003e\n\u003ctd\u003e500\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-Source Threshold Voltage\u003c\/td\u003e\n\u003ctd\u003eVGS(th)\u003c\/td\u003e\n\u003ctd\u003e2.0 - 4.0\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source On-Resistance\u003c\/td\u003e\n\u003ctd\u003eRDS(on)\u003c\/td\u003e\n\u003ctd\u003e0.52\u003c\/td\u003e\n\u003ctd\u003eΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate Charge (VGS = 10 V)\u003c\/td\u003e\n\u003ctd\u003eQg\u003c\/td\u003e\n\u003ctd\u003e52\u003c\/td\u003e\n\u003ctd\u003enC\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Operating Junction Temperature\u003c\/td\u003e\n\u003ctd\u003eTJ\u003c\/td\u003e\n\u003ctd\u003e-55 to +150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eAdditional Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eRepetitive avalanche current: 11 A\u003c\/li\u003e\n\u003cli\u003eRepetitive avalanche energy: 17 mJ\u003c\/li\u003e\n\u003cli\u003ePeak diode recovery dV\/dt: 6.9 V\/ns\u003c\/li\u003e\n\u003cli\u003eSoldering temperature (10s): 300°C\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eThermal Resistance Ratings\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eTyp.\u003c\/th\u003e\n\u003cth\u003eMax.\u003c\/th\u003e\n\u003cth\u003eUnits\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eJunction-to-Case\u003c\/td\u003e\n\u003ctd\u003eRthJC\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e0.75\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCase-to-Sink\u003c\/td\u003e\n\u003ctd\u003eRthCS\u003c\/td\u003e\n\u003ctd\u003e0.50\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eJunction-to-Ambient\u003c\/td\u003e\n\u003ctd\u003eRthJA\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e62\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eDatasheet\u003c\/h3\u003e\n\u003cp\u003eFor detailed technical specifications, download the datasheet here: \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-vis\/vis-irfs11n50apbf.pdf\" target=\"_blank\"\u003eIRFS11N50APBF Datasheet\u003c\/a\u003e\u003c\/p\u003e\n\u003ch3\u003eNote\u003c\/h3\u003e\n\u003cp\u003eThis product is RoHS compliant. For more information, please visit \u003ca href=\"http:\/\/www.vishay.com\" target=\"_blank\"\u003eVISHAY\u003c\/a\u003e. The datasheet provides comprehensive details about this part. If additional information is needed, please search the internet for the part number IRFS11N50APBF.\u003c\/p\u003e","published_at":"2025-08-13T03:11:53+05:30","created_at":"2025-08-13T03:11:54+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["IMPORT_CSV","Mosfets","Power","Semiconductors","VISHA-X","WLDM"],"price":23006,"price_min":23006,"price_max":23006,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50613895594301,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"IRFS11N50APBF","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"IRFS11N50APBF","public_title":null,"options":["Default Title"],"price":23006,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"IRFS11N50APBF","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/IRFS11N50APBF_54989732_65562c09.jpg?v=1755034917"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/IRFS11N50APBF_54989732_65562c09.jpg?v=1755034917","options":["Title"],"media":[{"alt":null,"id":45809458053437,"position":1,"preview_image":{"aspect_ratio":1.0,"height":200,"width":200,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/IRFS11N50APBF_54989732_65562c09.jpg?v=1755034917"},"aspect_ratio":1.0,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/IRFS11N50APBF_54989732_65562c09.jpg?v=1755034917","width":200}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eVISHAY Power Field-Effect Transistor IRFS11N50APBF\u003c\/h3\u003e\n\u003cp\u003eEnhance your electronic projects with the VISHAY IRFS11N50APBF Power MOSFET, a high-performance N-channel device designed for demanding power switching applications. Manufactured in China, this RoHS-compliant semiconductor offers reliable operation and robust features suitable for switch mode power supplies, uninterruptible power supplies, and high-speed power switching systems.\u003c\/p\u003e\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eLow gate charge (Qg) for simplified drive requirements\u003c\/li\u003e\n\u003cli\u003eEnhanced gate, avalanche, and dynamic dV\/dt ruggedness\u003c\/li\u003e\n\u003cli\u003eFully characterized capacitance with specified avalanche voltage and current\u003c\/li\u003e\n\u003cli\u003eEffective output capacitance (Coss eff.) for efficient switching\u003c\/li\u003e\n\u003cli\u003ePackage Type: TUBE (D2PAK\/TO-263)\u003c\/li\u003e\n\u003cli\u003eRoHS compliant\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eKey Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eLimits\u003c\/th\u003e\n\u003cth\u003eUnits\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eVDS\u003c\/td\u003e\n\u003ctd\u003e500\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eVGS\u003c\/td\u003e\n\u003ctd\u003e±30\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous Drain Current at 25°C\u003c\/td\u003e\n\u003ctd\u003eID\u003c\/td\u003e\n\u003ctd\u003e11\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous Drain Current at 100°C\u003c\/td\u003e\n\u003ctd\u003eID\u003c\/td\u003e\n\u003ctd\u003e7.0\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePulsed Drain Current\u003c\/td\u003e\n\u003ctd\u003eIDM\u003c\/td\u003e\n\u003ctd\u003e44\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Power Dissipation\u003c\/td\u003e\n\u003ctd\u003ePD\u003c\/td\u003e\n\u003ctd\u003e170\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Junction-to-Case Resistance\u003c\/td\u003e\n\u003ctd\u003eRthJC\u003c\/td\u003e\n\u003ctd\u003e0.75\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Junction-to-Ambient Resistance\u003c\/td\u003e\n\u003ctd\u003eRthJA\u003c\/td\u003e\n\u003ctd\u003e62\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source Breakdown Voltage\u003c\/td\u003e\n\u003ctd\u003eVDS\u003c\/td\u003e\n\u003ctd\u003e500\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-Source Threshold Voltage\u003c\/td\u003e\n\u003ctd\u003eVGS(th)\u003c\/td\u003e\n\u003ctd\u003e2.0 - 4.0\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source On-Resistance\u003c\/td\u003e\n\u003ctd\u003eRDS(on)\u003c\/td\u003e\n\u003ctd\u003e0.52\u003c\/td\u003e\n\u003ctd\u003eΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate Charge (VGS = 10 V)\u003c\/td\u003e\n\u003ctd\u003eQg\u003c\/td\u003e\n\u003ctd\u003e52\u003c\/td\u003e\n\u003ctd\u003enC\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Operating Junction Temperature\u003c\/td\u003e\n\u003ctd\u003eTJ\u003c\/td\u003e\n\u003ctd\u003e-55 to +150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eAdditional Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eRepetitive avalanche current: 11 A\u003c\/li\u003e\n\u003cli\u003eRepetitive avalanche energy: 17 mJ\u003c\/li\u003e\n\u003cli\u003ePeak diode recovery dV\/dt: 6.9 V\/ns\u003c\/li\u003e\n\u003cli\u003eSoldering temperature (10s): 300°C\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eThermal Resistance Ratings\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eTyp.\u003c\/th\u003e\n\u003cth\u003eMax.\u003c\/th\u003e\n\u003cth\u003eUnits\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eJunction-to-Case\u003c\/td\u003e\n\u003ctd\u003eRthJC\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e0.75\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCase-to-Sink\u003c\/td\u003e\n\u003ctd\u003eRthCS\u003c\/td\u003e\n\u003ctd\u003e0.50\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eJunction-to-Ambient\u003c\/td\u003e\n\u003ctd\u003eRthJA\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e62\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eDatasheet\u003c\/h3\u003e\n\u003cp\u003eFor detailed technical specifications, download the datasheet here: \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-vis\/vis-irfs11n50apbf.pdf\" target=\"_blank\"\u003eIRFS11N50APBF Datasheet\u003c\/a\u003e\u003c\/p\u003e\n\u003ch3\u003eNote\u003c\/h3\u003e\n\u003cp\u003eThis product is RoHS compliant. For more information, please visit \u003ca href=\"http:\/\/www.vishay.com\" target=\"_blank\"\u003eVISHAY\u003c\/a\u003e. The datasheet provides comprehensive details about this part. If additional information is needed, please search the internet for the part number IRFS11N50APBF.\u003c\/p\u003e"}
