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BIDW30N60T

SKU: BIDW30N60T

Regular price ₹ 231.45
Sale price ₹ 231.45 Regular price
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Min: 60 Multi: 1
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BOURNS BIDW30N60T IGBT TRENCH FS 600V 60A

Introducing the BOURNS BIDW30N60T, a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding electronic applications. Manufactured in China (COO: CN), this IGBT features a trench field-stop (FS) technology optimized for efficient power switching and thermal management.

Product Features

  • High voltage capability of 600V, suitable for power conversion and motor control applications
  • Maximum continuous current of 60A for reliable power handling
  • Trench FS technology ensures low on-state voltage drop and reduced switching losses
  • Package Type: TO-247 in a tube configuration for easy handling and installation
  • RoHS compliant, ensuring environmentally friendly manufacturing standards
  • ECCN: EAR99, suitable for international trade and compliance
  • Unit of Measure: Each (EA)

Specifications

Parameter Value
Part Number BIDW30N60T
Manufacturer BOURNS
Country of Origin CN
Package Type Tube
Maximum Collector-Emitter Voltage (VCES) 600V
Continuous Collector Current (IC) 60A
ECCN EAR99

Product Image

BOURNS BIDW30N60T IGBT

Additional Information

For detailed technical specifications and application notes, please refer to the datasheet. If you require further details, search the internet for the part number BIDW30N60T.

Disclaimer

Datasheet was not processed; please search the internet for the part number for more details.


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