VISHAY SEMICONDUCTOR IRFI830GPBF N-Channel Power MOSFET
The VISHAY SEMICONDUCTOR IRFI830GPBF is a high-voltage N-channel power MOSFET designed for demanding industrial and commercial applications. Featuring a TO-220 FULLPAK package with isolated capabilities, this device offers excellent switching performance, low on-resistance, and robust ruggedization.
Soldering temperature recommendation: 300°C for 10 seconds
Mounting torque: 0.6 Nm (M3 screw)
Maximum Ratings & Characteristics
Parameter
Symbol
Limit
Unit
Drain-source breakdown voltage
VDS
500
V
Gate-source leakage current
IGSS
±100
nA
Zero gate voltage drain current
IDSS
25
μA
On-state resistance
RDS(on)
1.5
Ω
Body diode voltage
VSD
1.6
V
Disclaimers
For detailed technical information, please refer to the datasheet linked above. The datasheet was not processed; please search the internet for the part number for more details.
{"id":10024754217277,"title":"IRFI830GPBF","handle":"irfi830gpbf","description":"\u003ch3\u003eVISHAY SEMICONDUCTOR IRFI830GPBF N-Channel Power MOSFET\u003c\/h3\u003e\n\u003cp\u003eThe VISHAY SEMICONDUCTOR IRFI830GPBF is a high-voltage N-channel power MOSFET designed for demanding industrial and commercial applications. Featuring a TO-220 FULLPAK package with isolated capabilities, this device offers excellent switching performance, low on-resistance, and robust ruggedization.\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003ePart Number:\u003c\/strong\u003e IRFI830GPBF\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eManufacturer:\u003c\/strong\u003e VISHAY SEMICONDUCTOR\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eUnit of Measure:\u003c\/strong\u003e EA\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePackage Type:\u003c\/strong\u003e TO220-3 (FULLPAK)\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eDatasheet:\u003c\/strong\u003e \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-irfi830gpbf.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eKey Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eIsolated package with high voltage isolation of 2.5 kV RMS (60 seconds, 60 Hz)\u003c\/li\u003e\n\u003cli\u003eSink to lead creepage distance of 4.8 mm\u003c\/li\u003e\n\u003cli\u003eDynamic dV\/dt rating for fast switching\u003c\/li\u003e\n\u003cli\u003eLow thermal resistance for efficient heat dissipation\u003c\/li\u003e\n\u003cli\u003eRobust third-generation power MOSFET technology from Vishay Siliconix\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eConditions\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n\u003ctd\u003eVDS\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e500\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source voltage\u003c\/td\u003e\n\u003ctd\u003eVGS\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e±20\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current at 25°C\u003c\/td\u003e\n\u003ctd\u003eID\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e3.1\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current at 100°C\u003c\/td\u003e\n\u003ctd\u003eID\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e2.0\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePulsed drain current\u003c\/td\u003e\n\u003ctd\u003eIDM\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e12\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003ePD\u003c\/td\u003e\n\u003ctd\u003eTC=25°C\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e35\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction and storage temperature\u003c\/td\u003e\n\u003ctd\u003eTJ, Tstg\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-55\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e+150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eAdditional Details\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eLow on-resistance (RDS(on)) of 1.5 Ω at VGS = 10 V\u003c\/li\u003e\n\u003cli\u003eGate charge (Qg) max. 38 nC, Qgs 5.0 nC, Qgd 22 nC\u003c\/li\u003e\n\u003cli\u003ePeak diode recovery dV\/dt of 3.5 V\/ns\u003c\/li\u003e\n\u003cli\u003eSoldering temperature recommendation: 300°C for 10 seconds\u003c\/li\u003e\n\u003cli\u003eMounting torque: 0.6 Nm (M3 screw)\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eMaximum Ratings \u0026amp; Characteristics\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eLimit\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source breakdown voltage\u003c\/td\u003e\n\u003ctd\u003eVDS\u003c\/td\u003e\n\u003ctd\u003e500\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source leakage current\u003c\/td\u003e\n\u003ctd\u003eIGSS\u003c\/td\u003e\n\u003ctd\u003e±100\u003c\/td\u003e\n\u003ctd\u003enA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eZero gate voltage drain current\u003c\/td\u003e\n\u003ctd\u003eIDSS\u003c\/td\u003e\n\u003ctd\u003e25\u003c\/td\u003e\n\u003ctd\u003eμA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOn-state resistance\u003c\/td\u003e\n\u003ctd\u003eRDS(on)\u003c\/td\u003e\n\u003ctd\u003e1.5\u003c\/td\u003e\n\u003ctd\u003eΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eBody diode voltage\u003c\/td\u003e\n\u003ctd\u003eVSD\u003c\/td\u003e\n\u003ctd\u003e1.6\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eDisclaimers\u003c\/h3\u003e\n\u003cp\u003eFor detailed technical information, please refer to the datasheet linked above. The datasheet was not processed; please search the internet for the part number for more details.\u003c\/p\u003e\u003cbr\u003e","published_at":"2025-08-14T11:35:43+05:30","created_at":"2025-08-14T11:35:43+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["1A","500V","CH","IMPORT_CSV","Mosfets","Semiconductors","VISHA-SEM","WLDM"],"price":13998,"price_min":13998,"price_max":13998,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50618943963453,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"IRFI830GPBF","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"IRFI830GPBF","public_title":null,"options":["Default Title"],"price":13998,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"IRFI830GPBF","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/IRFI830GPBF_44991112_d359016a.jpg?v=1755151546"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/IRFI830GPBF_44991112_d359016a.jpg?v=1755151546","options":["Title"],"media":[{"alt":null,"id":45832081211709,"position":1,"preview_image":{"aspect_ratio":1.0,"height":200,"width":200,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/IRFI830GPBF_44991112_d359016a.jpg?v=1755151546"},"aspect_ratio":1.0,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/IRFI830GPBF_44991112_d359016a.jpg?v=1755151546","width":200}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eVISHAY SEMICONDUCTOR IRFI830GPBF N-Channel Power MOSFET\u003c\/h3\u003e\n\u003cp\u003eThe VISHAY SEMICONDUCTOR IRFI830GPBF is a high-voltage N-channel power MOSFET designed for demanding industrial and commercial applications. Featuring a TO-220 FULLPAK package with isolated capabilities, this device offers excellent switching performance, low on-resistance, and robust ruggedization.\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003ePart Number:\u003c\/strong\u003e IRFI830GPBF\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eManufacturer:\u003c\/strong\u003e VISHAY SEMICONDUCTOR\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eUnit of Measure:\u003c\/strong\u003e EA\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePackage Type:\u003c\/strong\u003e TO220-3 (FULLPAK)\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eDatasheet:\u003c\/strong\u003e \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-irfi830gpbf.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eKey Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eIsolated package with high voltage isolation of 2.5 kV RMS (60 seconds, 60 Hz)\u003c\/li\u003e\n\u003cli\u003eSink to lead creepage distance of 4.8 mm\u003c\/li\u003e\n\u003cli\u003eDynamic dV\/dt rating for fast switching\u003c\/li\u003e\n\u003cli\u003eLow thermal resistance for efficient heat dissipation\u003c\/li\u003e\n\u003cli\u003eRobust third-generation power MOSFET technology from Vishay Siliconix\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eConditions\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n\u003ctd\u003eVDS\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e500\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source voltage\u003c\/td\u003e\n\u003ctd\u003eVGS\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e±20\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current at 25°C\u003c\/td\u003e\n\u003ctd\u003eID\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e3.1\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current at 100°C\u003c\/td\u003e\n\u003ctd\u003eID\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e2.0\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePulsed drain current\u003c\/td\u003e\n\u003ctd\u003eIDM\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e12\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003ePD\u003c\/td\u003e\n\u003ctd\u003eTC=25°C\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e35\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction and storage temperature\u003c\/td\u003e\n\u003ctd\u003eTJ, Tstg\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-55\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e+150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eAdditional Details\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eLow on-resistance (RDS(on)) of 1.5 Ω at VGS = 10 V\u003c\/li\u003e\n\u003cli\u003eGate charge (Qg) max. 38 nC, Qgs 5.0 nC, Qgd 22 nC\u003c\/li\u003e\n\u003cli\u003ePeak diode recovery dV\/dt of 3.5 V\/ns\u003c\/li\u003e\n\u003cli\u003eSoldering temperature recommendation: 300°C for 10 seconds\u003c\/li\u003e\n\u003cli\u003eMounting torque: 0.6 Nm (M3 screw)\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eMaximum Ratings \u0026amp; Characteristics\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eLimit\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source breakdown voltage\u003c\/td\u003e\n\u003ctd\u003eVDS\u003c\/td\u003e\n\u003ctd\u003e500\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source leakage current\u003c\/td\u003e\n\u003ctd\u003eIGSS\u003c\/td\u003e\n\u003ctd\u003e±100\u003c\/td\u003e\n\u003ctd\u003enA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eZero gate voltage drain current\u003c\/td\u003e\n\u003ctd\u003eIDSS\u003c\/td\u003e\n\u003ctd\u003e25\u003c\/td\u003e\n\u003ctd\u003eμA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOn-state resistance\u003c\/td\u003e\n\u003ctd\u003eRDS(on)\u003c\/td\u003e\n\u003ctd\u003e1.5\u003c\/td\u003e\n\u003ctd\u003eΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eBody diode voltage\u003c\/td\u003e\n\u003ctd\u003eVSD\u003c\/td\u003e\n\u003ctd\u003e1.6\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eDisclaimers\u003c\/h3\u003e\n\u003cp\u003eFor detailed technical information, please refer to the datasheet linked above. The datasheet was not processed; please search the internet for the part number for more details.\u003c\/p\u003e\u003cbr\u003e"}
