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IRFR224TRPBF

SKU: IRFR224TRPBF

Regular price ₹ 77.61
Sale price ₹ 77.61 Regular price
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VISHAY Power Field-Effect Transistor IRFR224TRPBF

Upgrade your electronic designs with the VISHAY IRFR224TRPBF Power MOSFET, a high-performance N-channel device optimized for demanding switching applications. Manufactured in China, this semiconductor offers reliable operation with advanced features suitable for various power management solutions.

Product Features

  • Dynamic dV/dt rating for fast switching performance
  • Repetitive avalanche rated for rugged operation
  • Surface-mount DPAK package for easy installation
  • Available in tape and reel for automated assembly
  • Straight lead version (IRFU224 series) available for through-hole mounting
  • Low on-resistance (RDS(on) = 1.1 Ω at VGS = 10 V)
  • Maximum drain-source voltage (VDS) of 250 V
  • Continuous drain current (ID) of 3.8 A at 25°C
  • Maximum power dissipation of 42 W
  • Operating junction temperature range from -55°C to +150°C

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit
Drain-source breakdown voltage VDS - - 250 V
Gate-source threshold voltage VGS(th) 2.0 - 4.0 V
Gate-source leakage IGSS - - ± 100 nA
Drain-source on-resistance RDS(on) - - 1.1 Ω
Maximum drain current ID 3.8 - - A
Maximum power dissipation PD - - 42 W
Operating junction temperature TJ -55 - 150 °C

Additional Details

  • Package Type: DPAK (TO-252)
  • Lead (Pb)-free and halogen-free options available
  • Repetitive avalanche current (IAR): 3.8 A
  • Pulse drain current (IDM): 15 A
  • Soldering recommendations: peak temperature of 260°C for 10 seconds
  • Maximum junction-to-ambient thermal resistance (PCB mount): 50°C/W

For detailed technical specifications, please refer to the datasheet.

Product Metadata

  • Part Number: IRFR224TRPBF
  • Manufacturer: VISHAY
  • Country of Origin: CN
  • UOM: EA
  • ECCN: EAR99
  • Package Type: REEL

Note: Datasheet was not processed please search the internet for the part number for more details.


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