The VISHAY SEMICONDUCTOR SiHG039N60EF-GE3 is a high-performance N-Channel Power MOSFET designed for demanding electronic applications. Manufactured in China, this MOSFET features advanced technology to ensure low conduction and switching losses, making it ideal for power supply, industrial, and renewable energy applications.
4th generation EF series technology for enhanced performance
Low figure-of-merit (RDS(on) x Qg) for efficient switching
Reduced effective capacitance (Co(er)) for faster switching
Supports avalanche energy rated (UIS) for rugged applications
Suitable for high-voltage switching in server, telecom, industrial, and renewable energy systems
Key Specifications
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source voltage
VDS
-
-
600
V
Gate-source voltage
VGS
±30
-
-
V
Continuous drain current (TJ=150°C)
ID
61
-
-
A
Drain-source on-resistance (VGS=10V)
RDS(on)
-
0.036
-
Ω
Maximum power dissipation
PD
-
-
357
W
Operating junction and storage temperature range
TJ, Tstg
-55
to
+150
°C
Absolute maximum drain-source voltage
VDS
600
-
-
V
Maximum gate-source voltage
VGS
±30
-
-
V
Thermal and Switching Characteristics
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Maximum junction-to-ambient thermal resistance
RthJA
-
-
40
°C/W
Gate charge (VGS=10V, ID=32A)
Qg
-
84
126
nC
Switching delay time (VGS=10V, ID=32A)
td(on)
-
109
164
ns
Fall time
tf
-
78
117
ns
Maximum drain current vs. case temperature
ID
-
10 mA at 150°C
-
Additional Information
Supports high pulse current (up to 196A) and pulsed avalanche energy (508mJ)
Soldering temperature recommendations: peak at 260°C for 10 seconds
Includes fast body diode with reverse recovery time of 169-338ns and diode forward voltage of approximately 1.2V
For detailed technical specifications and application notes, please refer to the datasheet. Datasheet was not processed, please search the internet for the part number for more details.
Use left/right arrows to navigate the slideshow or swipe left/right if using a mobile device
Choosing a selection results in a full page refresh.
Press the space key then arrow keys to make a selection.
Shopping Cart
{"id":10022485328189,"title":"SIHG039N60EF-GE3","handle":"sihg039n60ef-ge3","description":"\u003ch3\u003eVISHAY SEMICONDUCTOR SiHG039N60EF-GE3 N-Channel Power MOSFET (600V, 61A) - TO247AC Package\u003c\/h3\u003e\n\u003cp\u003eThe VISHAY SEMICONDUCTOR SiHG039N60EF-GE3 is a high-performance N-Channel Power MOSFET designed for demanding electronic applications. Manufactured in China, this MOSFET features advanced technology to ensure low conduction and switching losses, making it ideal for power supply, industrial, and renewable energy applications.\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003ePart Number:\u003c\/strong\u003e SIHG039N60EF-GE3\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eManufacturer:\u003c\/strong\u003e VISHAY SEMICONDUCTOR\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eUnit of Measure:\u003c\/strong\u003e EA\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePackage Type:\u003c\/strong\u003e TO-247AC (Tube)\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eDatasheet:\u003c\/strong\u003e \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sihg039n60ef-ge3.pdf\" target=\"_blank\" rel=\"noopener noreferrer\"\u003eDownload Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003e4th generation EF series technology for enhanced performance\u003c\/li\u003e\n\u003cli\u003eLow figure-of-merit (R\u003csub\u003eDS(on)\u003c\/sub\u003e x Q\u003csub\u003eg\u003c\/sub\u003e) for efficient switching\u003c\/li\u003e\n\u003cli\u003eReduced effective capacitance (C\u003csub\u003eo(er)\u003c\/sub\u003e) for faster switching\u003c\/li\u003e\n\u003cli\u003eSupports avalanche energy rated (UIS) for rugged applications\u003c\/li\u003e\n\u003cli\u003eSuitable for high-voltage switching in server, telecom, industrial, and renewable energy systems\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eKey Specifications\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\"\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eConditions\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e600\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e±30\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current (TJ=150°C)\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e61\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source on-resistance (V\u003csub\u003eGS\u003c\/sub\u003e=10V)\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003eDS(on)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e0.036\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e357\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating junction and storage temperature range\u003c\/td\u003e\n\u003ctd\u003eT\u003csub\u003eJ, Tstg\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-55\u003c\/td\u003e\n\u003ctd\u003e to \u003c\/td\u003e\n\u003ctd\u003e+150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eAbsolute maximum drain-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e600\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum gate-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e±30\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eThermal and Switching Characteristics\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\"\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eConditions\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction-to-ambient thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJA\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e40\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate charge (V\u003csub\u003eGS\u003c\/sub\u003e=10V, I\u003csub\u003eD\u003c\/sub\u003e=32A)\u003c\/td\u003e\n\u003ctd\u003eQ\u003csub\u003eg\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e84\u003c\/td\u003e\n\u003ctd\u003e126\u003c\/td\u003e\n\u003ctd\u003enC\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSwitching delay time (V\u003csub\u003eGS\u003c\/sub\u003e=10V, I\u003csub\u003eD\u003c\/sub\u003e=32A)\u003c\/td\u003e\n\u003ctd\u003et\u003csub\u003ed(on)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e109\u003c\/td\u003e\n\u003ctd\u003e164\u003c\/td\u003e\n\u003ctd\u003ens\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eFall time\u003c\/td\u003e\n\u003ctd\u003et\u003csub\u003ef\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e78\u003c\/td\u003e\n\u003ctd\u003e117\u003c\/td\u003e\n\u003ctd\u003ens\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum drain current vs. case temperature\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e10 mA at 150°C\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eAdditional Information\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eSupports high pulse current (up to 196A) and pulsed avalanche energy (508mJ)\u003c\/li\u003e\n\u003cli\u003eSoldering temperature recommendations: peak at 260°C for 10 seconds\u003c\/li\u003e\n\u003cli\u003eIncludes fast body diode with reverse recovery time of 169-338ns and diode forward voltage of approximately 1.2V\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003eFor detailed technical specifications and application notes, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sihg039n60ef-ge3.pdf\" target=\"_blank\" rel=\"noopener noreferrer\"\u003edatasheet\u003c\/a\u003e. Datasheet was not processed, please search the internet for the part number for more details.\u003c\/p\u003e","published_at":"2025-08-13T10:07:16+05:30","created_at":"2025-08-13T10:07:16+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["600V","61A","CH","IMPORT_CSV","Mosfets","Semiconductors","VISHA-SEM","WLDM"],"price":133325,"price_min":133325,"price_max":133325,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50614630220093,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"SIHG039N60EF-GE3","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"SIHG039N60EF-GE3","public_title":null,"options":["Default Title"],"price":133325,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"SIHG039N60EF-GE3","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHG039N60EF-GE3_55999321_14199bc4.jpg?v=1755059839"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHG039N60EF-GE3_55999321_14199bc4.jpg?v=1755059839","options":["Title"],"media":[{"alt":null,"id":45813675950397,"position":1,"preview_image":{"aspect_ratio":1.0,"height":200,"width":200,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHG039N60EF-GE3_55999321_14199bc4.jpg?v=1755059839"},"aspect_ratio":1.0,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHG039N60EF-GE3_55999321_14199bc4.jpg?v=1755059839","width":200}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eVISHAY SEMICONDUCTOR SiHG039N60EF-GE3 N-Channel Power MOSFET (600V, 61A) - TO247AC Package\u003c\/h3\u003e\n\u003cp\u003eThe VISHAY SEMICONDUCTOR SiHG039N60EF-GE3 is a high-performance N-Channel Power MOSFET designed for demanding electronic applications. Manufactured in China, this MOSFET features advanced technology to ensure low conduction and switching losses, making it ideal for power supply, industrial, and renewable energy applications.\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003ePart Number:\u003c\/strong\u003e SIHG039N60EF-GE3\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eManufacturer:\u003c\/strong\u003e VISHAY SEMICONDUCTOR\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eUnit of Measure:\u003c\/strong\u003e EA\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePackage Type:\u003c\/strong\u003e TO-247AC (Tube)\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eDatasheet:\u003c\/strong\u003e \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sihg039n60ef-ge3.pdf\" target=\"_blank\" rel=\"noopener noreferrer\"\u003eDownload Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003e4th generation EF series technology for enhanced performance\u003c\/li\u003e\n\u003cli\u003eLow figure-of-merit (R\u003csub\u003eDS(on)\u003c\/sub\u003e x Q\u003csub\u003eg\u003c\/sub\u003e) for efficient switching\u003c\/li\u003e\n\u003cli\u003eReduced effective capacitance (C\u003csub\u003eo(er)\u003c\/sub\u003e) for faster switching\u003c\/li\u003e\n\u003cli\u003eSupports avalanche energy rated (UIS) for rugged applications\u003c\/li\u003e\n\u003cli\u003eSuitable for high-voltage switching in server, telecom, industrial, and renewable energy systems\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eKey Specifications\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\"\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eConditions\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e600\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e±30\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous drain current (TJ=150°C)\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e61\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source on-resistance (V\u003csub\u003eGS\u003c\/sub\u003e=10V)\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003eDS(on)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e0.036\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e357\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating junction and storage temperature range\u003c\/td\u003e\n\u003ctd\u003eT\u003csub\u003eJ, Tstg\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-55\u003c\/td\u003e\n\u003ctd\u003e to \u003c\/td\u003e\n\u003ctd\u003e+150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eAbsolute maximum drain-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e600\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum gate-source voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e±30\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eThermal and Switching Characteristics\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\"\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eConditions\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction-to-ambient thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJA\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e40\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate charge (V\u003csub\u003eGS\u003c\/sub\u003e=10V, I\u003csub\u003eD\u003c\/sub\u003e=32A)\u003c\/td\u003e\n\u003ctd\u003eQ\u003csub\u003eg\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e84\u003c\/td\u003e\n\u003ctd\u003e126\u003c\/td\u003e\n\u003ctd\u003enC\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSwitching delay time (V\u003csub\u003eGS\u003c\/sub\u003e=10V, I\u003csub\u003eD\u003c\/sub\u003e=32A)\u003c\/td\u003e\n\u003ctd\u003et\u003csub\u003ed(on)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e109\u003c\/td\u003e\n\u003ctd\u003e164\u003c\/td\u003e\n\u003ctd\u003ens\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eFall time\u003c\/td\u003e\n\u003ctd\u003et\u003csub\u003ef\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e78\u003c\/td\u003e\n\u003ctd\u003e117\u003c\/td\u003e\n\u003ctd\u003ens\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum drain current vs. case temperature\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e10 mA at 150°C\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eAdditional Information\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eSupports high pulse current (up to 196A) and pulsed avalanche energy (508mJ)\u003c\/li\u003e\n\u003cli\u003eSoldering temperature recommendations: peak at 260°C for 10 seconds\u003c\/li\u003e\n\u003cli\u003eIncludes fast body diode with reverse recovery time of 169-338ns and diode forward voltage of approximately 1.2V\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003eFor detailed technical specifications and application notes, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sihg039n60ef-ge3.pdf\" target=\"_blank\" rel=\"noopener noreferrer\"\u003edatasheet\u003c\/a\u003e. Datasheet was not processed, please search the internet for the part number for more details.\u003c\/p\u003e"}
