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SIHG21N80AE-GE3
VISHAY SEMICONDUCTOR SiHG21N80AE N-Channel Power MOSFET (800V, 17.4A, TO247AC)
The VISHAY SEMICONDUCTOR SiHG21N80AE is a high-performance N-Channel Power MOSFET designed for demanding electronic applications. Manufactured in China, this MOSFET offers robust electrical characteristics suitable for power supply and industrial applications.
Product Features
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er) )
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Single configuration in TO-247AC package
Lead (Pb)-free and halogen-free
Key Specifications
Parameter
Symbol
Limits
Units
Drain-source voltage at TJ max.
VDS
800
V
Continuous drain current (TJ = 150°C)
ID
17.4
A
Pulsed drain current
IDM
38
A
Maximum power dissipation
PD
179
W
Drain-source on-resistance (VGS =10V, ID =11A)
RDS(on)
0.205 (typ.) / 0.235 (max.)
Ω
Gate-source threshold voltage
VGS(th)
2.0 - 4.0
V
Absolute Maximum Ratings
Parameter
Symbol
Limit
Units
Drain-source voltage
VDS
800
V
Gate-source voltage
VGS
±30
V
Operating junction and storage temperature range
TJ, Tstg
-55 to +150
°C
Soldering peak temperature
260 (for 10s)
°C
Thermal Characteristics
Parameter
Symbol
Typ.
Max.
Units
Maximum junction-to-ambient thermal resistance
RthJA
-
40
°C/W
Maximum junction-to-case (drain)
RthJC
-
0.7
Application Areas
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction (PFC)
Lighting: HID, fluorescent ballast lighting
Industrial: welding, induction heating, motor drives, battery chargers, solar inverters
Additional Details
Package Type: TO-247AC in TUBE
Part Number: SIHG21N80AE-GE3
Manufacturer: VISHAY SEMICONDUCTOR
Country of Origin: CN
UOM: EA
ECCN: EAR99
Datasheet: Download Datasheet
For more detailed specifications and technical information, please refer to the datasheet provided.
Note: Repetitive ratings are pulse width limited by maximum junction temperature. Ensure proper thermal management during operation.
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{"id":10022485426493,"title":"SIHG21N80AE-GE3","handle":"sihg21n80ae-ge3","description":"\u003ch3\u003eVISHAY SEMICONDUCTOR SiHG21N80AE N-Channel Power MOSFET (800V, 17.4A, TO247AC)\u003c\/h3\u003e\n\n\u003cp\u003eThe VISHAY SEMICONDUCTOR SiHG21N80AE is a high-performance N-Channel Power MOSFET designed for demanding electronic applications. Manufactured in China, this MOSFET offers robust electrical characteristics suitable for power supply and industrial applications.\u003c\/p\u003e\n\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003eLow figure-of-merit (FOM) R\u003csub\u003eon\u003c\/sub\u003e x Q\u003csub\u003eg\u003c\/sub\u003e\n\u003c\/li\u003e\n \u003cli\u003eLow effective capacitance (C\u003csub\u003eo(er)\u003c\/sub\u003e)\u003c\/li\u003e\n \u003cli\u003eReduced switching and conduction losses\u003c\/li\u003e\n \u003cli\u003eAvalanche energy rated (UIS)\u003c\/li\u003e\n \u003cli\u003eSingle configuration in TO-247AC package\u003c\/li\u003e\n \u003cli\u003eLead (Pb)-free and halogen-free\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003ch3\u003eKey Specifications\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"4\" cellspacing=\"0\"\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eLimits\u003c\/th\u003e\n \u003cth\u003eUnits\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-source voltage at TJ max.\u003c\/td\u003e\n \u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e800\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eContinuous drain current (TJ = 150°C)\u003c\/td\u003e\n \u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e17.4\u003c\/td\u003e\n \u003ctd\u003eA\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003ePulsed drain current\u003c\/td\u003e\n \u003ctd\u003eI\u003csub\u003eDM\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e38\u003c\/td\u003e\n \u003ctd\u003eA\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n \u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e179\u003c\/td\u003e\n \u003ctd\u003eW\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-source on-resistance (V\u003csub\u003eGS\u003c\/sub\u003e=10V, I\u003csub\u003eD\u003c\/sub\u003e=11A)\u003c\/td\u003e\n \u003ctd\u003eR\u003csub\u003eDS(on)\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e0.205 (typ.) \/ 0.235 (max.)\u003c\/td\u003e\n \u003ctd\u003eΩ\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate-source threshold voltage\u003c\/td\u003e\n \u003ctd\u003eV\u003csub\u003eGS(th)\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e2.0 - 4.0\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eAbsolute Maximum Ratings\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"4\" cellspacing=\"0\"\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eLimit\u003c\/th\u003e\n \u003cth\u003eUnits\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n \u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e800\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate-source voltage\u003c\/td\u003e\n \u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e±30\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eOperating junction and storage temperature range\u003c\/td\u003e\n \u003ctd\u003eT\u003csub\u003eJ, T\u003csub\u003estg\u003c\/sub\u003e\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e-55 to +150\u003c\/td\u003e\n \u003ctd\u003e°C\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eSoldering peak temperature\u003c\/td\u003e\n \u003ctd\u003e\u003c\/td\u003e\n \u003ctd\u003e260 (for 10s)\u003c\/td\u003e\n \u003ctd\u003e°C\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eThermal Characteristics\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"4\" cellspacing=\"0\"\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eTyp.\u003c\/th\u003e\n \u003cth\u003eMax.\u003c\/th\u003e\n \u003cth\u003eUnits\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum junction-to-ambient thermal resistance\u003c\/td\u003e\n \u003ctd\u003eR\u003csub\u003ethJA\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e40\u003c\/td\u003e\n \u003ctd\u003e°C\/W\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum junction-to-case (drain)\u003c\/td\u003e\n \u003ctd\u003eR\u003csub\u003ethJC\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e0.7\u003c\/td\u003e\n \u003ctd\u003e\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eApplication Areas\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003eServer and telecom power supplies\u003c\/li\u003e\n \u003cli\u003eSwitch mode power supplies (SMPS)\u003c\/li\u003e\n \u003cli\u003ePower factor correction (PFC)\u003c\/li\u003e\n \u003cli\u003eLighting: HID, fluorescent ballast lighting\u003c\/li\u003e\n \u003cli\u003eIndustrial: welding, induction heating, motor drives, battery chargers, solar inverters\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003ch3\u003eAdditional Details\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003ePackage Type: TO-247AC in TUBE\u003c\/li\u003e\n \u003cli\u003ePart Number: SIHG21N80AE-GE3\u003c\/li\u003e\n \u003cli\u003eManufacturer: VISHAY SEMICONDUCTOR\u003c\/li\u003e\n \u003cli\u003eCountry of Origin: CN\u003c\/li\u003e\n \u003cli\u003eUOM: EA\u003c\/li\u003e\n \u003cli\u003eECCN: EAR99\u003c\/li\u003e\n \u003cli\u003eDatasheet: \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sihg21n80ae-ge3.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003cp\u003eFor more detailed specifications and technical information, please refer to the datasheet provided.\u003c\/p\u003e\n\n\u003c!-- Product Disclaimers --\u003e\n\u003cp\u003eNote: Repetitive ratings are pulse width limited by maximum junction temperature. Ensure proper thermal management during operation.\u003c\/p\u003e","published_at":"2025-08-13T10:07:18+05:30","created_at":"2025-08-13T10:07:18+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["4A","800V","CH","IMPORT_CSV","Mosfets","Semiconductors","VISHA-SEM","WLDM"],"price":44349,"price_min":44349,"price_max":44349,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50614630383933,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"SIHG21N80AE-GE3","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"SIHG21N80AE-GE3","public_title":null,"options":["Default Title"],"price":44349,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"SIHG21N80AE-GE3","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/55999322.jpg?v=1755059840"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/55999322.jpg?v=1755059840","options":["Title"],"media":[{"alt":null,"id":45813676212541,"position":1,"preview_image":{"aspect_ratio":1.0,"height":420,"width":420,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/55999322.jpg?v=1755059840"},"aspect_ratio":1.0,"height":420,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/55999322.jpg?v=1755059840","width":420}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eVISHAY SEMICONDUCTOR SiHG21N80AE N-Channel Power MOSFET (800V, 17.4A, TO247AC)\u003c\/h3\u003e\n\n\u003cp\u003eThe VISHAY SEMICONDUCTOR SiHG21N80AE is a high-performance N-Channel Power MOSFET designed for demanding electronic applications. Manufactured in China, this MOSFET offers robust electrical characteristics suitable for power supply and industrial applications.\u003c\/p\u003e\n\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003eLow figure-of-merit (FOM) R\u003csub\u003eon\u003c\/sub\u003e x Q\u003csub\u003eg\u003c\/sub\u003e\n\u003c\/li\u003e\n \u003cli\u003eLow effective capacitance (C\u003csub\u003eo(er)\u003c\/sub\u003e)\u003c\/li\u003e\n \u003cli\u003eReduced switching and conduction losses\u003c\/li\u003e\n \u003cli\u003eAvalanche energy rated (UIS)\u003c\/li\u003e\n \u003cli\u003eSingle configuration in TO-247AC package\u003c\/li\u003e\n \u003cli\u003eLead (Pb)-free and halogen-free\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003ch3\u003eKey Specifications\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"4\" cellspacing=\"0\"\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eLimits\u003c\/th\u003e\n \u003cth\u003eUnits\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-source voltage at TJ max.\u003c\/td\u003e\n \u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e800\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eContinuous drain current (TJ = 150°C)\u003c\/td\u003e\n \u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e17.4\u003c\/td\u003e\n \u003ctd\u003eA\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003ePulsed drain current\u003c\/td\u003e\n \u003ctd\u003eI\u003csub\u003eDM\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e38\u003c\/td\u003e\n \u003ctd\u003eA\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n \u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e179\u003c\/td\u003e\n \u003ctd\u003eW\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-source on-resistance (V\u003csub\u003eGS\u003c\/sub\u003e=10V, I\u003csub\u003eD\u003c\/sub\u003e=11A)\u003c\/td\u003e\n \u003ctd\u003eR\u003csub\u003eDS(on)\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e0.205 (typ.) \/ 0.235 (max.)\u003c\/td\u003e\n \u003ctd\u003eΩ\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate-source threshold voltage\u003c\/td\u003e\n \u003ctd\u003eV\u003csub\u003eGS(th)\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e2.0 - 4.0\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eAbsolute Maximum Ratings\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"4\" cellspacing=\"0\"\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eLimit\u003c\/th\u003e\n \u003cth\u003eUnits\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-source voltage\u003c\/td\u003e\n \u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e800\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate-source voltage\u003c\/td\u003e\n \u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e±30\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eOperating junction and storage temperature range\u003c\/td\u003e\n \u003ctd\u003eT\u003csub\u003eJ, T\u003csub\u003estg\u003c\/sub\u003e\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e-55 to +150\u003c\/td\u003e\n \u003ctd\u003e°C\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eSoldering peak temperature\u003c\/td\u003e\n \u003ctd\u003e\u003c\/td\u003e\n \u003ctd\u003e260 (for 10s)\u003c\/td\u003e\n \u003ctd\u003e°C\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eThermal Characteristics\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"4\" cellspacing=\"0\"\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eTyp.\u003c\/th\u003e\n \u003cth\u003eMax.\u003c\/th\u003e\n \u003cth\u003eUnits\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum junction-to-ambient thermal resistance\u003c\/td\u003e\n \u003ctd\u003eR\u003csub\u003ethJA\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e40\u003c\/td\u003e\n \u003ctd\u003e°C\/W\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum junction-to-case (drain)\u003c\/td\u003e\n \u003ctd\u003eR\u003csub\u003ethJC\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e0.7\u003c\/td\u003e\n \u003ctd\u003e\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eApplication Areas\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003eServer and telecom power supplies\u003c\/li\u003e\n \u003cli\u003eSwitch mode power supplies (SMPS)\u003c\/li\u003e\n \u003cli\u003ePower factor correction (PFC)\u003c\/li\u003e\n \u003cli\u003eLighting: HID, fluorescent ballast lighting\u003c\/li\u003e\n \u003cli\u003eIndustrial: welding, induction heating, motor drives, battery chargers, solar inverters\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003ch3\u003eAdditional Details\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003ePackage Type: TO-247AC in TUBE\u003c\/li\u003e\n \u003cli\u003ePart Number: SIHG21N80AE-GE3\u003c\/li\u003e\n \u003cli\u003eManufacturer: VISHAY SEMICONDUCTOR\u003c\/li\u003e\n \u003cli\u003eCountry of Origin: CN\u003c\/li\u003e\n \u003cli\u003eUOM: EA\u003c\/li\u003e\n \u003cli\u003eECCN: EAR99\u003c\/li\u003e\n \u003cli\u003eDatasheet: \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sihg21n80ae-ge3.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003cp\u003eFor more detailed specifications and technical information, please refer to the datasheet provided.\u003c\/p\u003e\n\n\u003c!-- Product Disclaimers --\u003e\n\u003cp\u003eNote: Repetitive ratings are pulse width limited by maximum junction temperature. Ensure proper thermal management during operation.\u003c\/p\u003e"}
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{
"product_id": "MTAwMjI0ODU0MjY0OTM=",
"variant_id" : "NTA2MTQ2MzAzODM5MzM=",
"variant_available" : "dHJ1ZQ==",
"inventory_quantity" : "NDU2",
"inventory_management" :"c2hvcGlmeQ==",
"inventory_policy" : "ZGVueQ==",
"image":"JTJGJTJGdGhpbmtyb2JvdGljcy5jb20lMkZjZG4lMkZzaG9wJTJGZmlsZXMlMkY1NTk5OTMyMi5qcGclM0Z2JTNEMTc1NTA1OTg0MA==",
"price": "NDQzNDk=",
"title": "RGVmYXVsdCtUaXRsZQ==",
"value": "RGVmYXVsdCtUaXRsZQ==",
"variant_options": {"Title": "RGVmYXVsdCtUaXRsZQ=="
}
}
India
---
Australia
Canada
India
Mexico
United Arab Emirates
United States
