The VISHAY SEMICONDUCTOR SiHG22N60EF-GE3 is a high-performance N-Channel Power MOSFET designed for demanding applications such as server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC), lighting, industrial systems, welding, induction heating, motor drives, battery chargers, and renewable energy systems including solar inverters.
Ultra low gate charge (Qg) for efficient operation
Avalanche energy rated (UIS) for rugged applications
Electrical Specifications
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source breakdown voltage
VDS
VGS=0 V, ID=250 μA
-
-
600
V
Drain-source on-resistance
RDS(on)
VGS=10 V, ID=11 A
-
0.158
0.182
Ω
Gate charge
Qg
VGS=10 V, ID=11 A, VDS=480 V
-
48
96
nC
Maximum drain current (TJ=25°C)
ID
-
19
-
-
A
Pulsed drain current
IDM
-
-
46
-
A
Maximum power dissipation
PD
-
-
179
-
W
Operating junction temperature range
TJ
-55 to +150
-
-
°C
Thermal and Mechanical Characteristics
Parameter
Symbol
Typ.
Max.
Unit
Maximum junction-to-ambient thermal resistance
RthJA
-
40
°C/W
Maximum junction-to-case (drain) thermal resistance
RthJC
-
0.7
°C/W
Additional Features
Low gate charge and input capacitance for high-speed switching
Suitable for high-voltage switching applications up to 600V
RoHS compliant
Designed with fast body diode for efficient reverse conduction
For more detailed technical information, please refer to the datasheet. The datasheet was not processed; please search the internet for the part number for more details.
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{"id":10022485492029,"title":"SIHG22N60EF-GE3","handle":"sihg22n60ef-ge3","description":"\u003ch3\u003eVISHAY SEMICONDUCTOR SiHG22N60EF-GE3 N-Channel Power MOSFET (600V, 19A) - TO247AC Package\u003c\/h3\u003e\n\u003cp\u003eThe VISHAY SEMICONDUCTOR SiHG22N60EF-GE3 is a high-performance N-Channel Power MOSFET designed for demanding applications such as server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC), lighting, industrial systems, welding, induction heating, motor drives, battery chargers, and renewable energy systems including solar inverters.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003ePart Number:\u003c\/strong\u003e SIHG22N60EF-GE3\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eManufacturer:\u003c\/strong\u003e VISHAY SEMICONDUCTOR\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eUnit of Measure:\u003c\/strong\u003e EA\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003ePackage Type:\u003c\/strong\u003e TO-247AC (Tube)\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eDatasheet:\u003c\/strong\u003e \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sihg22n60ef-ge3.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\u003c\/p\u003e\n\n\u003ch3\u003eKey Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eLow figure-of-merit (FOM) R\u003csub\u003eon\u003c\/sub\u003e x Q\u003csub\u003eg\u003c\/sub\u003e\n\u003c\/li\u003e\n\u003cli\u003eLow input capacitance (C\u003csub\u003eiss\u003c\/sub\u003e) for fast switching\u003c\/li\u003e\n\u003cli\u003eReduced switching and conduction losses\u003c\/li\u003e\n\u003cli\u003eUltra low gate charge (Q\u003csub\u003eg\u003c\/sub\u003e) for efficient operation\u003c\/li\u003e\n\u003cli\u003eAvalanche energy rated (UIS) for rugged applications\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003ch3\u003eElectrical Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eConditions\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source breakdown voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e=0 V, I\u003csub\u003eD\u003c\/sub\u003e=250 μA\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e600\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source on-resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003eDS(on)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e=10 V, I\u003csub\u003eD\u003c\/sub\u003e=11 A\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e0.158\u003c\/td\u003e\n\u003ctd\u003e0.182\u003c\/td\u003e\n\u003ctd\u003eΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate charge\u003c\/td\u003e\n\u003ctd\u003eQ\u003csub\u003eg\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e=10 V, I\u003csub\u003eD\u003c\/sub\u003e=11 A, V\u003csub\u003eDS\u003c\/sub\u003e=480 V\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e48\u003c\/td\u003e\n\u003ctd\u003e96\u003c\/td\u003e\n\u003ctd\u003enC\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum drain current (TJ=25°C)\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e19\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePulsed drain current\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eDM\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e46\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e179\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating junction temperature range\u003c\/td\u003e\n\u003ctd\u003eT\u003csub\u003eJ\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-55 to +150\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eThermal and Mechanical Characteristics\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eTyp.\u003c\/th\u003e\n\u003cth\u003eMax.\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction-to-ambient thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJA\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e40\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction-to-case (drain) thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJC\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e0.7\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eAdditional Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eLow gate charge and input capacitance for high-speed switching\u003c\/li\u003e\n\u003cli\u003eSuitable for high-voltage switching applications up to 600V\u003c\/li\u003e\n\u003cli\u003eRoHS compliant\u003c\/li\u003e\n\u003cli\u003eDesigned with fast body diode for efficient reverse conduction\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003cp\u003eFor more detailed technical information, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sihg22n60ef-ge3.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e. The datasheet was not processed; please search the internet for the part number for more details.\u003c\/p\u003e","published_at":"2025-08-13T10:07:20+05:30","created_at":"2025-08-13T10:07:20+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["19A","600V","CH","IMPORT_CSV","Mosfets","Semiconductors","VISHA-SEM","WLDM"],"price":40884,"price_min":40884,"price_max":40884,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50614630449469,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"SIHG22N60EF-GE3","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"SIHG22N60EF-GE3","public_title":null,"options":["Default Title"],"price":40884,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"SIHG22N60EF-GE3","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHG22N60EF-GE3_55999323_4b6c2f8f.jpg?v=1755059844"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHG22N60EF-GE3_55999323_4b6c2f8f.jpg?v=1755059844","options":["Title"],"media":[{"alt":null,"id":45813676704061,"position":1,"preview_image":{"aspect_ratio":1.0,"height":200,"width":200,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHG22N60EF-GE3_55999323_4b6c2f8f.jpg?v=1755059844"},"aspect_ratio":1.0,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHG22N60EF-GE3_55999323_4b6c2f8f.jpg?v=1755059844","width":200}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eVISHAY SEMICONDUCTOR SiHG22N60EF-GE3 N-Channel Power MOSFET (600V, 19A) - TO247AC Package\u003c\/h3\u003e\n\u003cp\u003eThe VISHAY SEMICONDUCTOR SiHG22N60EF-GE3 is a high-performance N-Channel Power MOSFET designed for demanding applications such as server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC), lighting, industrial systems, welding, induction heating, motor drives, battery chargers, and renewable energy systems including solar inverters.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003ePart Number:\u003c\/strong\u003e SIHG22N60EF-GE3\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eManufacturer:\u003c\/strong\u003e VISHAY SEMICONDUCTOR\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eUnit of Measure:\u003c\/strong\u003e EA\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003ePackage Type:\u003c\/strong\u003e TO-247AC (Tube)\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eDatasheet:\u003c\/strong\u003e \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sihg22n60ef-ge3.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\u003c\/p\u003e\n\n\u003ch3\u003eKey Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eLow figure-of-merit (FOM) R\u003csub\u003eon\u003c\/sub\u003e x Q\u003csub\u003eg\u003c\/sub\u003e\n\u003c\/li\u003e\n\u003cli\u003eLow input capacitance (C\u003csub\u003eiss\u003c\/sub\u003e) for fast switching\u003c\/li\u003e\n\u003cli\u003eReduced switching and conduction losses\u003c\/li\u003e\n\u003cli\u003eUltra low gate charge (Q\u003csub\u003eg\u003c\/sub\u003e) for efficient operation\u003c\/li\u003e\n\u003cli\u003eAvalanche energy rated (UIS) for rugged applications\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003ch3\u003eElectrical Specifications\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eConditions\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source breakdown voltage\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e=0 V, I\u003csub\u003eD\u003c\/sub\u003e=250 μA\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e600\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-source on-resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003eDS(on)\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e=10 V, I\u003csub\u003eD\u003c\/sub\u003e=11 A\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e0.158\u003c\/td\u003e\n\u003ctd\u003e0.182\u003c\/td\u003e\n\u003ctd\u003eΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate charge\u003c\/td\u003e\n\u003ctd\u003eQ\u003csub\u003eg\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e=10 V, I\u003csub\u003eD\u003c\/sub\u003e=11 A, V\u003csub\u003eDS\u003c\/sub\u003e=480 V\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e48\u003c\/td\u003e\n\u003ctd\u003e96\u003c\/td\u003e\n\u003ctd\u003enC\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum drain current (TJ=25°C)\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e19\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePulsed drain current\u003c\/td\u003e\n\u003ctd\u003eI\u003csub\u003eDM\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e46\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum power dissipation\u003c\/td\u003e\n\u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e179\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating junction temperature range\u003c\/td\u003e\n\u003ctd\u003eT\u003csub\u003eJ\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-55 to +150\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eThermal and Mechanical Characteristics\u003c\/h3\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eTyp.\u003c\/th\u003e\n\u003cth\u003eMax.\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction-to-ambient thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJA\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e40\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum junction-to-case (drain) thermal resistance\u003c\/td\u003e\n\u003ctd\u003eR\u003csub\u003ethJC\u003c\/sub\u003e\n\u003c\/td\u003e\n\u003ctd\u003e-\u003c\/td\u003e\n\u003ctd\u003e0.7\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eAdditional Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eLow gate charge and input capacitance for high-speed switching\u003c\/li\u003e\n\u003cli\u003eSuitable for high-voltage switching applications up to 600V\u003c\/li\u003e\n\u003cli\u003eRoHS compliant\u003c\/li\u003e\n\u003cli\u003eDesigned with fast body diode for efficient reverse conduction\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003cp\u003eFor more detailed technical information, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-tf\/tf-sihg22n60ef-ge3.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e. The datasheet was not processed; please search the internet for the part number for more details.\u003c\/p\u003e"}
