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SIHG47N65E-GE3

SKU: SIHG47N65E-GE3

Regular price ₹ 759.48
Sale price ₹ 759.48 Regular price
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VISHAY SEMICONDUCTOR SIHG47N65E-GE3 N-Channel MOSFET

Introducing the VISHAY SEMICONDUCTOR SIHG47N65E-GE3, a high-performance N-Channel MOSFET designed for demanding electronic applications. Manufactured in China, this semiconductor offers robust voltage and current handling capabilities, making it ideal for power switching and management in various electronic systems.

Product Features

  • Voltage Rating: 650V
  • Continuous Drain Current: 47A
  • Package Type: TO-247AC (Tube)
  • RoHS Compliant: No
  • ECCN: EAR99
  • Part Number: SIHG47N65E-GE3
  • Manufacturer: VISHAY SEMICONDUCTOR
  • Country of Origin: CN
  • Unit of Measure: Each (EA)

Technical Specifications

  • Maximum Drain-Source Voltage (Vds): 650V
  • Maximum Continuous Drain Current (Id): 47A
  • Package: TO-247AC, supplied in a tube for easy handling and installation

Datasheet & Additional Resources

For detailed technical information, specifications, and application guidelines, please refer to the official datasheet: SIHG47N65E-GE3 Datasheet.

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VISHAY SEMICONDUCTOR SIHG47N65E-GE3 MOSFET

Note: The datasheet was not processed; please search the internet for the part number SIHG47N65E-GE3 for more detailed information.


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