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SIHW47N60E-GE3
VISHAY SiHW47N60E-GE3 Power MOSFET
The VISHAY SiHW47N60E-GE3 is a high-performance N-channel Power Field-Effect Transistor designed for demanding electronic applications. Manufactured in China, this MOSFET offers reliable switching capabilities with low on-resistance and high current handling capacity.
Part Number: SIHW47N60E-GE3
Manufacturer: VISHAY
Country of Origin: CN
Package Type: TUBE
UOM: Not specified
ECCN: EAR99
Datasheet: Download Datasheet
Product Features
High drain current capability: 47A at TJ = 150°C
Drain-Source Voltage: 600V
Low RDS(on) : 0.064Ω at VGS = 10V
Ultra-low gate charge: Qg max. 220nC
Low input capacitance: Ciss rated for reduced switching losses
Avalanche energy rated: 1800mJ (UIS)
Suitable for switch mode power supplies, PFC, lighting, industrial applications, and renewable energy systems
RoHS compliant
Absolute Maximum Ratings
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
Continuous Drain Current (TJ=150°C)
ID
47
A
Pulsed Drain Current
IDM
145
A
Maximum Power Dissipation
PD
357
W
Operating Junction and Storage Temperature Range
TJ , Tstg
-55 to +150
°C
Soldering Peak Temperature
300
°C
Thermal Resistance Ratings
Parameter
Symbol
Typ.
Max.
Unit
Maximum Junction-to-Ambient
RthJA
-
40
°C/W
Maximum Junction-to-Case (Drain)
RthJC
-
0.33
Electrical Characteristics (at 25°C)
Parameter
Symbol
Test Conditions
Min
Typ.
Max
Unit
Drain-Source Breakdown Voltage
VDS
VGS =0V, ID =250μA
-
600
-
V
Gate-Source Threshold Voltage (N)
VGS(th)
VDS =VGS , ID =250μA
2
-
4
V
Drain-Source On-Resistance
RDS(on)
VGS =10V, ID =24A
-
0.064
-
Ω
Gate Charge (Qg )
Qg
ID =24A, VDS =480V
-
220
-
nC
Application Areas
Switch mode power supplies (SMPS)
Power factor correction (PFC)
Lighting: HID, fluorescent ballast
Industrial: welding, induction heating, motor drives, battery chargers
Renewable energy systems, solar inverters
For detailed technical specifications, please refer to the datasheet . Datasheet was not processed, please search the internet for the part number for more details.
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{"id":10028118245693,"title":"SIHW47N60E-GE3","handle":"sihw47n60e-ge3","description":"\u003ch3\u003eVISHAY SiHW47N60E-GE3 Power MOSFET\u003c\/h3\u003e\n\u003cp\u003eThe VISHAY SiHW47N60E-GE3 is a high-performance N-channel Power Field-Effect Transistor designed for demanding electronic applications. Manufactured in China, this MOSFET offers reliable switching capabilities with low on-resistance and high current handling capacity.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003ePart Number:\u003c\/strong\u003e SIHW47N60E-GE3\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eManufacturer:\u003c\/strong\u003e VISHAY\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003ePackage Type:\u003c\/strong\u003e TUBE\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eUOM:\u003c\/strong\u003e Not specified\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eDatasheet:\u003c\/strong\u003e \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-vis\/vis-sihw47n60e-ge3.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\u003c\/p\u003e\n\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003eHigh drain current capability: 47A at TJ = 150°C\u003c\/li\u003e\n \u003cli\u003eDrain-Source Voltage: 600V\u003c\/li\u003e\n \u003cli\u003eLow R\u003csub\u003eDS(on)\u003c\/sub\u003e: 0.064Ω at V\u003csub\u003eGS\u003c\/sub\u003e = 10V\u003c\/li\u003e\n \u003cli\u003eUltra-low gate charge: Q\u003csub\u003eg\u003c\/sub\u003e max. 220nC\u003c\/li\u003e\n \u003cli\u003eLow input capacitance: C\u003csub\u003eiss\u003c\/sub\u003e rated for reduced switching losses\u003c\/li\u003e\n \u003cli\u003eAvalanche energy rated: 1800mJ (UIS)\u003c\/li\u003e\n \u003cli\u003eSuitable for switch mode power supplies, PFC, lighting, industrial applications, and renewable energy systems\u003c\/li\u003e\n \u003cli\u003eRoHS compliant\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003ch3\u003eAbsolute Maximum Ratings\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\"\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eLimit\u003c\/th\u003e\n \u003cth\u003eUnit\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-Source Voltage\u003c\/td\u003e\n \u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e600\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate-Source Voltage\u003c\/td\u003e\n \u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e±30\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eContinuous Drain Current (TJ=150°C)\u003c\/td\u003e\n \u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e47\u003c\/td\u003e\n \u003ctd\u003eA\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003ePulsed Drain Current\u003c\/td\u003e\n \u003ctd\u003eI\u003csub\u003eDM\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e145\u003c\/td\u003e\n \u003ctd\u003eA\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum Power Dissipation\u003c\/td\u003e\n \u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e357\u003c\/td\u003e\n \u003ctd\u003eW\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eOperating Junction and Storage Temperature Range\u003c\/td\u003e\n \u003ctd\u003eT\u003csub\u003eJ\u003c\/sub\u003e, T\u003csub\u003estg\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e-55 to +150\u003c\/td\u003e\n \u003ctd\u003e°C\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eSoldering Peak Temperature\u003c\/td\u003e\n \u003ctd\u003e\u003c\/td\u003e\n \u003ctd\u003e300\u003c\/td\u003e\n \u003ctd\u003e°C\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eThermal Resistance Ratings\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\"\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eTyp.\u003c\/th\u003e\n \u003cth\u003eMax.\u003c\/th\u003e\n \u003cth\u003eUnit\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum Junction-to-Ambient\u003c\/td\u003e\n \u003ctd\u003eR\u003csub\u003ethJA\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e40\u003c\/td\u003e\n \u003ctd\u003e°C\/W\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum Junction-to-Case (Drain)\u003c\/td\u003e\n \u003ctd\u003eR\u003csub\u003ethJC\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e0.33\u003c\/td\u003e\n \u003ctd\u003e\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eElectrical Characteristics (at 25°C)\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\"\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eTest Conditions\u003c\/th\u003e\n \u003cth\u003eMin\u003c\/th\u003e\n \u003cth\u003eTyp.\u003c\/th\u003e\n \u003cth\u003eMax\u003c\/th\u003e\n \u003cth\u003eUnit\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-Source Breakdown Voltage\u003c\/td\u003e\n \u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e=0V, I\u003csub\u003eD\u003c\/sub\u003e=250μA\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e600\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate-Source Threshold Voltage (N)\u003c\/td\u003e\n \u003ctd\u003eV\u003csub\u003eGS(th)\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e=V\u003csub\u003eGS\u003c\/sub\u003e, I\u003csub\u003eD\u003c\/sub\u003e=250μA\u003c\/td\u003e\n \u003ctd\u003e2\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e4\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-Source On-Resistance\u003c\/td\u003e\n \u003ctd\u003eR\u003csub\u003eDS(on)\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e=10V, I\u003csub\u003eD\u003c\/sub\u003e=24A\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e0.064\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003eΩ\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate Charge (Q\u003csub\u003eg\u003c\/sub\u003e)\u003c\/td\u003e\n \u003ctd\u003eQg\u003c\/td\u003e\n \u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e=24A, V\u003csub\u003eDS\u003c\/sub\u003e=480V\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e220\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003enC\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eApplication Areas\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003eSwitch mode power supplies (SMPS)\u003c\/li\u003e\n \u003cli\u003ePower factor correction (PFC)\u003c\/li\u003e\n \u003cli\u003eLighting: HID, fluorescent ballast\u003c\/li\u003e\n \u003cli\u003eIndustrial: welding, induction heating, motor drives, battery chargers\u003c\/li\u003e\n \u003cli\u003eRenewable energy systems, solar inverters\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003cp\u003eFor detailed technical specifications, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-vis\/vis-sihw47n60e-ge3.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e. Datasheet was not processed, please search the internet for the part number for more details.\u003c\/p\u003e\u003cbr\u003e","published_at":"2025-08-16T07:17:33+05:30","created_at":"2025-08-16T07:17:33+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["47A","IMPORT_CSV","IMPORT_PT2","Mosfets","Power","Semiconductors","VISHA-X","WLDM"],"price":97707,"price_min":97707,"price_max":97707,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50626657747261,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"SIHW47N60E-GE3","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"SIHW47N60E-GE3","public_title":null,"options":["Default Title"],"price":97707,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"SIHW47N60E-GE3","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHW47N60E-GE3_54990409_926d4b20.jpg?v=1755308856"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHW47N60E-GE3_54990409_926d4b20.jpg?v=1755308856","options":["Title"],"media":[{"alt":null,"id":45864337604925,"position":1,"preview_image":{"aspect_ratio":1.0,"height":200,"width":200,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHW47N60E-GE3_54990409_926d4b20.jpg?v=1755308856"},"aspect_ratio":1.0,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/SIHW47N60E-GE3_54990409_926d4b20.jpg?v=1755308856","width":200}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eVISHAY SiHW47N60E-GE3 Power MOSFET\u003c\/h3\u003e\n\u003cp\u003eThe VISHAY SiHW47N60E-GE3 is a high-performance N-channel Power Field-Effect Transistor designed for demanding electronic applications. Manufactured in China, this MOSFET offers reliable switching capabilities with low on-resistance and high current handling capacity.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003ePart Number:\u003c\/strong\u003e SIHW47N60E-GE3\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eManufacturer:\u003c\/strong\u003e VISHAY\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003ePackage Type:\u003c\/strong\u003e TUBE\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eUOM:\u003c\/strong\u003e Not specified\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eDatasheet:\u003c\/strong\u003e \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-vis\/vis-sihw47n60e-ge3.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\u003c\/p\u003e\n\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003eHigh drain current capability: 47A at TJ = 150°C\u003c\/li\u003e\n \u003cli\u003eDrain-Source Voltage: 600V\u003c\/li\u003e\n \u003cli\u003eLow R\u003csub\u003eDS(on)\u003c\/sub\u003e: 0.064Ω at V\u003csub\u003eGS\u003c\/sub\u003e = 10V\u003c\/li\u003e\n \u003cli\u003eUltra-low gate charge: Q\u003csub\u003eg\u003c\/sub\u003e max. 220nC\u003c\/li\u003e\n \u003cli\u003eLow input capacitance: C\u003csub\u003eiss\u003c\/sub\u003e rated for reduced switching losses\u003c\/li\u003e\n \u003cli\u003eAvalanche energy rated: 1800mJ (UIS)\u003c\/li\u003e\n \u003cli\u003eSuitable for switch mode power supplies, PFC, lighting, industrial applications, and renewable energy systems\u003c\/li\u003e\n \u003cli\u003eRoHS compliant\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003ch3\u003eAbsolute Maximum Ratings\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\"\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eLimit\u003c\/th\u003e\n \u003cth\u003eUnit\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-Source Voltage\u003c\/td\u003e\n \u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e600\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate-Source Voltage\u003c\/td\u003e\n \u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e±30\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eContinuous Drain Current (TJ=150°C)\u003c\/td\u003e\n \u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e47\u003c\/td\u003e\n \u003ctd\u003eA\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003ePulsed Drain Current\u003c\/td\u003e\n \u003ctd\u003eI\u003csub\u003eDM\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e145\u003c\/td\u003e\n \u003ctd\u003eA\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum Power Dissipation\u003c\/td\u003e\n \u003ctd\u003eP\u003csub\u003eD\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e357\u003c\/td\u003e\n \u003ctd\u003eW\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eOperating Junction and Storage Temperature Range\u003c\/td\u003e\n \u003ctd\u003eT\u003csub\u003eJ\u003c\/sub\u003e, T\u003csub\u003estg\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e-55 to +150\u003c\/td\u003e\n \u003ctd\u003e°C\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eSoldering Peak Temperature\u003c\/td\u003e\n \u003ctd\u003e\u003c\/td\u003e\n \u003ctd\u003e300\u003c\/td\u003e\n \u003ctd\u003e°C\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eThermal Resistance Ratings\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\"\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eTyp.\u003c\/th\u003e\n \u003cth\u003eMax.\u003c\/th\u003e\n \u003cth\u003eUnit\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum Junction-to-Ambient\u003c\/td\u003e\n \u003ctd\u003eR\u003csub\u003ethJA\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e40\u003c\/td\u003e\n \u003ctd\u003e°C\/W\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eMaximum Junction-to-Case (Drain)\u003c\/td\u003e\n \u003ctd\u003eR\u003csub\u003ethJC\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e0.33\u003c\/td\u003e\n \u003ctd\u003e\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eElectrical Characteristics (at 25°C)\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\"\u003e\n \u003ctr\u003e\n \u003cth\u003eParameter\u003c\/th\u003e\n \u003cth\u003eSymbol\u003c\/th\u003e\n \u003cth\u003eTest Conditions\u003c\/th\u003e\n \u003cth\u003eMin\u003c\/th\u003e\n \u003cth\u003eTyp.\u003c\/th\u003e\n \u003cth\u003eMax\u003c\/th\u003e\n \u003cth\u003eUnit\u003c\/th\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-Source Breakdown Voltage\u003c\/td\u003e\n \u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e=0V, I\u003csub\u003eD\u003c\/sub\u003e=250μA\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e600\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate-Source Threshold Voltage (N)\u003c\/td\u003e\n \u003ctd\u003eV\u003csub\u003eGS(th)\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003eV\u003csub\u003eDS\u003c\/sub\u003e=V\u003csub\u003eGS\u003c\/sub\u003e, I\u003csub\u003eD\u003c\/sub\u003e=250μA\u003c\/td\u003e\n \u003ctd\u003e2\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e4\u003c\/td\u003e\n \u003ctd\u003eV\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eDrain-Source On-Resistance\u003c\/td\u003e\n \u003ctd\u003eR\u003csub\u003eDS(on)\u003c\/sub\u003e\n\u003c\/td\u003e\n \u003ctd\u003eV\u003csub\u003eGS\u003c\/sub\u003e=10V, I\u003csub\u003eD\u003c\/sub\u003e=24A\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e0.064\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003eΩ\u003c\/td\u003e\n \u003c\/tr\u003e\n \u003ctr\u003e\n \u003ctd\u003eGate Charge (Q\u003csub\u003eg\u003c\/sub\u003e)\u003c\/td\u003e\n \u003ctd\u003eQg\u003c\/td\u003e\n \u003ctd\u003eI\u003csub\u003eD\u003c\/sub\u003e=24A, V\u003csub\u003eDS\u003c\/sub\u003e=480V\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003e220\u003c\/td\u003e\n \u003ctd\u003e-\u003c\/td\u003e\n \u003ctd\u003enC\u003c\/td\u003e\n \u003c\/tr\u003e\n\u003c\/table\u003e\n\n\u003ch3\u003eApplication Areas\u003c\/h3\u003e\n\u003cul\u003e\n \u003cli\u003eSwitch mode power supplies (SMPS)\u003c\/li\u003e\n \u003cli\u003ePower factor correction (PFC)\u003c\/li\u003e\n \u003cli\u003eLighting: HID, fluorescent ballast\u003c\/li\u003e\n \u003cli\u003eIndustrial: welding, induction heating, motor drives, battery chargers\u003c\/li\u003e\n \u003cli\u003eRenewable energy systems, solar inverters\u003c\/li\u003e\n\u003c\/ul\u003e\n\n\u003cp\u003eFor detailed technical specifications, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-vis\/vis-sihw47n60e-ge3.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e. Datasheet was not processed, please search the internet for the part number for more details.\u003c\/p\u003e\u003cbr\u003e"}
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"price": "OTc3MDc=",
"title": "RGVmYXVsdCtUaXRsZQ==",
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