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SIR104DP-T1-RE3

SKU: SIR104DP-T1-RE3

Regular price ₹ 214.82
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VISHAY Power Field-Effect Transistor (Part Number: SIR104DP-T1-RE3)

Enhance your electronic designs with the VISHAY SIR104DP-T1-RE3 Power MOSFET, a high-performance N-Channel 100 V (D-S) device optimized for various power applications. Manufactured in China, this semiconductor offers reliable operation and excellent efficiency for your power management needs.

Product Features

  • TrenchFET® Gen IV power MOSFET technology for superior performance
  • Very low RDS(on) – max. 0.0064 Ω at VGS = 10 V
  • Designed for low figure-of-merit (FOM) RDS(on) × Qg
  • 100% Rg and UIS tested for quality assurance
  • Suitable for synchronous rectification, primary side switching, DC/DC converters, power supplies, motor drive control, and load switching

Key Specifications

Parameter Symbol Rating Unit
Drain-source voltage VDS 100 V
Gate-source voltage VGS ±20 V
Continuous drain current (TJ=25°C) ID 79 A
Maximum power dissipation PD 100 W
Operating junction temperature range TJ, Tstg -55 to +150 °C
Package Type PowerPAK SO-8 Reel
RoHS Compliant Yes
ECCN EAR99

Thermal and Mechanical Ratings

Parameter Symbol Typical Maximum Unit
Junction-to-ambient thermal resistance (t ≤ 10 s) RthJA 18 23 °C/W
Junction-to-case (steady state) RthJC 1 1.25 °C/W

Absolute Maximum Ratings

Parameter Symbol Limit Unit
Drain-source voltage VDS 100 V
Gate-source voltage VGS ±20 V
Continuous drain current ID 79 A
Pulsed drain current IDM 200 A
Maximum power dissipation PD 100 W
Operating junction temperature TJ -55 to +150 °C

Additional Details

  • Package: PowerPAK SO-8 in a reel for automated assembly
  • RoHS compliant and halogen-free
  • Datasheet available for detailed electrical and thermal characteristics: Download Datasheet

For more technical information, please visit the manufacturer's website: VISHAY.

Note: Datasheet was not processed, please search the internet for the part number for more details.


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