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SISS04DN-T1-GE3

SKU: SISS04DN-T1-GE3

Regular price ₹ 121.96
Sale price ₹ 121.96 Regular price
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Power Field-Effect Transistor - SISS04DN-T1-GE3

Introducing the VISHAY SISS04DN-T1-GE3, a high-performance Power Field-Effect Transistor designed for advanced electronic applications. Manufactured in China (CN), this MOSFET is part of VISHAY's premium semiconductor lineup, ensuring reliable operation and superior efficiency.

Product Features

  • Type: Power Field-Effect Transistor (MOSFET)
  • Package Type: REEL for easy automation and handling
  • RoHS Compliant: Yes, environmentally friendly and lead-free
  • ECCN: EAR99, suitable for export compliance
  • Unit of Measure: Each (EA)

Specifications & Details

  • Part Number: SISS04DN-T1-GE3
  • Manufacturer: VISHAY
  • Country of Origin: China (CN)
  • Product Category: Semiconductors | MOSFETs
  • Package Type: REEL
  • Datasheet: Download Datasheet

Additional Information

This Power MOSFET is suitable for high-efficiency power switching applications, offering low on-resistance and high current handling capabilities. For detailed electrical characteristics and application guidelines, please refer to the datasheet linked above.

Note: The datasheet content has not been processed. Please search the internet for the part number SISS04DN-T1-GE3 for more detailed specifications and technical information.


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