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DGTD65T60S2PT
DGTD65T60S2PT IGBT Field Stop 650V 100A TO-247 - Diodes ZETEX
The DGTD65T60S2PT is a high-performance IGBT transistor manufactured by Diodes ZETEX , designed for demanding power switching applications. This device features advanced Field Stop Trench 2nd Generation Technology, offering high switching efficiency, ruggedness, and low conduction losses.
Key Features:
Voltage Rating: 650V
Continuous Collector Current: 100A (at 25°C), 60A (at 100°C)
Pulsed Collector Current: 180A
Collector-Emitter Saturation Voltage: 1.85V @ 60A
Gate-Emitter Voltage: ±20V
Maximum Junction Temperature: 175°C
RoHS Compliant, Halogen and Antimony Free ("Green" Device)
Lead-Free Finish
Package Type: TO-247 (MC) in a Tube
Electrical Characteristics:
Characteristic
Symbol
Min
Typ
Max
Unit
Conditions
Collector-Emitter Breakdown Voltage
BVCES
650
–
–
V
IC = 2mA, VGE = 0V
Collector-Emitter Saturation Voltage
VCE(sat)
–
1.85
2.40
V
IC = 60A, VGE = 15V, Tj = 25°C
Diode Forward Voltage
VF
–
1.45
2.00
V
IF = 25A, Tj = 25°C
Gate-Emitter Threshold Voltage
VGE(th)
4.0
5.0
6.0
V
VCE = VGE, IC = 0.5mA
Collector-Emitter Capacitance
Cies
–
2,327
pF
VCE = 25V, VGE = 0V, f = 1MHz
Switching Characteristics - Turn-on Delay Time
td(on)
–
42
ns
VGE = 15V, VCC = 400V, IC = 60A, RG = 7Ω, Tj = 25°C
Switching Characteristics - Fall Time
tf
–
40
ns
VGE = 15V, VCC = 400V, IC = 60A, RG = 7Ω, Tj = 25°C
Reverse Recovery Time
trr
–
110
ns
IF = 25A, diF/dt = 500A/µs, Tj = 25°C
Maximum Ratings and thermal characteristics are detailed in the datasheet. The device is suitable for high-speed switching, solar inverters, welders, UPS systems, and other power conversion applications.
For complete specifications and detailed electrical characteristics, please refer to the datasheet .
Part Number: DGTD65T60S2PTManufacturer: DIODES ZETEXCountry of Origin: CNUOM: EAECCN: EAR99Package Type: TUBE
Note: Datasheet was not processed, please search the internet for the part number for more details.
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{"id":10024339538237,"title":"DGTD65T60S2PT","handle":"dgtd65t60s2pt","description":"\u003ch3\u003eDGTD65T60S2PT IGBT Field Stop 650V 100A TO-247 - Diodes ZETEX\u003c\/h3\u003e\n\u003cp\u003eThe \u003cstrong\u003eDGTD65T60S2PT\u003c\/strong\u003e is a high-performance IGBT transistor manufactured by \u003cstrong\u003eDiodes ZETEX\u003c\/strong\u003e, designed for demanding power switching applications. This device features advanced Field Stop Trench 2nd Generation Technology, offering high switching efficiency, ruggedness, and low conduction losses.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eKey Features:\u003c\/strong\u003e\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003eVoltage Rating: 650V\u003c\/li\u003e\n\u003cli\u003eContinuous Collector Current: 100A (at 25°C), 60A (at 100°C)\u003c\/li\u003e\n\u003cli\u003ePulsed Collector Current: 180A\u003c\/li\u003e\n\u003cli\u003eCollector-Emitter Saturation Voltage: 1.85V @ 60A\u003c\/li\u003e\n\u003cli\u003eGate-Emitter Voltage: ±20V\u003c\/li\u003e\n\u003cli\u003eMaximum Junction Temperature: 175°C\u003c\/li\u003e\n\u003cli\u003eRoHS Compliant, Halogen and Antimony Free (\"Green\" Device)\u003c\/li\u003e\n\u003cli\u003eLead-Free Finish\u003c\/li\u003e\n\u003cli\u003ePackage Type: TO-247 (MC) in a Tube\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003e\u003cstrong\u003eElectrical Characteristics:\u003c\/strong\u003e\u003c\/p\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eCharacteristic\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003cth\u003eConditions\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCollector-Emitter Breakdown Voltage\u003c\/td\u003e\n\u003ctd\u003eBVCES\u003c\/td\u003e\n\u003ctd\u003e650\u003c\/td\u003e\n\u003ctd\u003e–\u003c\/td\u003e\n\u003ctd\u003e–\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003ctd\u003eIC = 2mA, VGE = 0V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCollector-Emitter Saturation Voltage\u003c\/td\u003e\n\u003ctd\u003eVCE(sat)\u003c\/td\u003e\n\u003ctd\u003e–\u003c\/td\u003e\n\u003ctd\u003e1.85\u003c\/td\u003e\n\u003ctd\u003e2.40\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003ctd\u003eIC = 60A, VGE = 15V, Tj = 25°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDiode Forward Voltage\u003c\/td\u003e\n\u003ctd\u003eVF\u003c\/td\u003e\n\u003ctd\u003e–\u003c\/td\u003e\n\u003ctd\u003e1.45\u003c\/td\u003e\n\u003ctd\u003e2.00\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003ctd\u003eIF = 25A, Tj = 25°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-Emitter Threshold Voltage\u003c\/td\u003e\n\u003ctd\u003eVGE(th)\u003c\/td\u003e\n\u003ctd\u003e4.0\u003c\/td\u003e\n\u003ctd\u003e5.0\u003c\/td\u003e\n\u003ctd\u003e6.0\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003ctd\u003eVCE = VGE, IC = 0.5mA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCollector-Emitter Capacitance\u003c\/td\u003e\n\u003ctd\u003eCies\u003c\/td\u003e\n\u003ctd\u003e–\u003c\/td\u003e\n\u003ctd\u003e2,327\u003c\/td\u003e\n\u003ctd\u003epF\u003c\/td\u003e\n\u003ctd\u003eVCE = 25V, VGE = 0V, f = 1MHz\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSwitching Characteristics - Turn-on Delay Time\u003c\/td\u003e\n\u003ctd\u003etd(on)\u003c\/td\u003e\n\u003ctd\u003e–\u003c\/td\u003e\n\u003ctd\u003e42\u003c\/td\u003e\n\u003ctd\u003ens\u003c\/td\u003e\n\u003ctd\u003eVGE = 15V, VCC = 400V, IC = 60A, RG = 7Ω, Tj = 25°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSwitching Characteristics - Fall Time\u003c\/td\u003e\n\u003ctd\u003etf\u003c\/td\u003e\n\u003ctd\u003e–\u003c\/td\u003e\n\u003ctd\u003e40\u003c\/td\u003e\n\u003ctd\u003ens\u003c\/td\u003e\n\u003ctd\u003eVGE = 15V, VCC = 400V, IC = 60A, RG = 7Ω, Tj = 25°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eReverse Recovery Time\u003c\/td\u003e\n\u003ctd\u003etrr\u003c\/td\u003e\n\u003ctd\u003e–\u003c\/td\u003e\n\u003ctd\u003e110\u003c\/td\u003e\n\u003ctd\u003ens\u003c\/td\u003e\n\u003ctd\u003eIF = 25A, diF\/dt = 500A\/µs, Tj = 25°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003cp\u003eMaximum Ratings and thermal characteristics are detailed in the datasheet. The device is suitable for high-speed switching, solar inverters, welders, UPS systems, and other power conversion applications.\u003c\/p\u003e\n\u003cp\u003eFor complete specifications and detailed electrical characteristics, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-di\/di-dgtd65t60s2pt.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003ePart Number:\u003c\/strong\u003e DGTD65T60S2PT\u003cbr\u003e\n\u003cstrong\u003eManufacturer:\u003c\/strong\u003e DIODES ZETEX\u003cbr\u003e\n\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003cbr\u003e\n\u003cstrong\u003eUOM:\u003c\/strong\u003e EA\u003cbr\u003e\n\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003cbr\u003e\n\u003cstrong\u003ePackage Type:\u003c\/strong\u003e TUBE\u003c\/p\u003e\n\u003cp\u003e\u003cem\u003eNote: Datasheet was not processed, please search the internet for the part number for more details.\u003c\/em\u003e\u003c\/p\u003e\u003cbr\u003e","published_at":"2025-08-14T04:37:09+05:30","created_at":"2025-08-14T04:37:09+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["100A","650V","DIODE","IGBT","IMPORT_CSV","Semiconductors","WLDM"],"price":47537,"price_min":47537,"price_max":47537,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50618261406013,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"DGTD65T60S2PT","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"DGTD65T60S2PT","public_title":null,"options":["Default Title"],"price":47537,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"DGTD65T60S2PT","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/DGTD65T60S2PT_55957974_35d649fd.jpg?v=1755126433"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/DGTD65T60S2PT_55957974_35d649fd.jpg?v=1755126433","options":["Title"],"media":[{"alt":null,"id":45827826155837,"position":1,"preview_image":{"aspect_ratio":1.0,"height":200,"width":200,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/DGTD65T60S2PT_55957974_35d649fd.jpg?v=1755126433"},"aspect_ratio":1.0,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/DGTD65T60S2PT_55957974_35d649fd.jpg?v=1755126433","width":200}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eDGTD65T60S2PT IGBT Field Stop 650V 100A TO-247 - Diodes ZETEX\u003c\/h3\u003e\n\u003cp\u003eThe \u003cstrong\u003eDGTD65T60S2PT\u003c\/strong\u003e is a high-performance IGBT transistor manufactured by \u003cstrong\u003eDiodes ZETEX\u003c\/strong\u003e, designed for demanding power switching applications. This device features advanced Field Stop Trench 2nd Generation Technology, offering high switching efficiency, ruggedness, and low conduction losses.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eKey Features:\u003c\/strong\u003e\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003eVoltage Rating: 650V\u003c\/li\u003e\n\u003cli\u003eContinuous Collector Current: 100A (at 25°C), 60A (at 100°C)\u003c\/li\u003e\n\u003cli\u003ePulsed Collector Current: 180A\u003c\/li\u003e\n\u003cli\u003eCollector-Emitter Saturation Voltage: 1.85V @ 60A\u003c\/li\u003e\n\u003cli\u003eGate-Emitter Voltage: ±20V\u003c\/li\u003e\n\u003cli\u003eMaximum Junction Temperature: 175°C\u003c\/li\u003e\n\u003cli\u003eRoHS Compliant, Halogen and Antimony Free (\"Green\" Device)\u003c\/li\u003e\n\u003cli\u003eLead-Free Finish\u003c\/li\u003e\n\u003cli\u003ePackage Type: TO-247 (MC) in a Tube\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003e\u003cstrong\u003eElectrical Characteristics:\u003c\/strong\u003e\u003c\/p\u003e\n\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eCharacteristic\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003cth\u003eConditions\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCollector-Emitter Breakdown Voltage\u003c\/td\u003e\n\u003ctd\u003eBVCES\u003c\/td\u003e\n\u003ctd\u003e650\u003c\/td\u003e\n\u003ctd\u003e–\u003c\/td\u003e\n\u003ctd\u003e–\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003ctd\u003eIC = 2mA, VGE = 0V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCollector-Emitter Saturation Voltage\u003c\/td\u003e\n\u003ctd\u003eVCE(sat)\u003c\/td\u003e\n\u003ctd\u003e–\u003c\/td\u003e\n\u003ctd\u003e1.85\u003c\/td\u003e\n\u003ctd\u003e2.40\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003ctd\u003eIC = 60A, VGE = 15V, Tj = 25°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDiode Forward Voltage\u003c\/td\u003e\n\u003ctd\u003eVF\u003c\/td\u003e\n\u003ctd\u003e–\u003c\/td\u003e\n\u003ctd\u003e1.45\u003c\/td\u003e\n\u003ctd\u003e2.00\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003ctd\u003eIF = 25A, Tj = 25°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-Emitter Threshold Voltage\u003c\/td\u003e\n\u003ctd\u003eVGE(th)\u003c\/td\u003e\n\u003ctd\u003e4.0\u003c\/td\u003e\n\u003ctd\u003e5.0\u003c\/td\u003e\n\u003ctd\u003e6.0\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003ctd\u003eVCE = VGE, IC = 0.5mA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCollector-Emitter Capacitance\u003c\/td\u003e\n\u003ctd\u003eCies\u003c\/td\u003e\n\u003ctd\u003e–\u003c\/td\u003e\n\u003ctd\u003e2,327\u003c\/td\u003e\n\u003ctd\u003epF\u003c\/td\u003e\n\u003ctd\u003eVCE = 25V, VGE = 0V, f = 1MHz\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSwitching Characteristics - Turn-on Delay Time\u003c\/td\u003e\n\u003ctd\u003etd(on)\u003c\/td\u003e\n\u003ctd\u003e–\u003c\/td\u003e\n\u003ctd\u003e42\u003c\/td\u003e\n\u003ctd\u003ens\u003c\/td\u003e\n\u003ctd\u003eVGE = 15V, VCC = 400V, IC = 60A, RG = 7Ω, Tj = 25°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSwitching Characteristics - Fall Time\u003c\/td\u003e\n\u003ctd\u003etf\u003c\/td\u003e\n\u003ctd\u003e–\u003c\/td\u003e\n\u003ctd\u003e40\u003c\/td\u003e\n\u003ctd\u003ens\u003c\/td\u003e\n\u003ctd\u003eVGE = 15V, VCC = 400V, IC = 60A, RG = 7Ω, Tj = 25°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eReverse Recovery Time\u003c\/td\u003e\n\u003ctd\u003etrr\u003c\/td\u003e\n\u003ctd\u003e–\u003c\/td\u003e\n\u003ctd\u003e110\u003c\/td\u003e\n\u003ctd\u003ens\u003c\/td\u003e\n\u003ctd\u003eIF = 25A, diF\/dt = 500A\/µs, Tj = 25°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003cp\u003eMaximum Ratings and thermal characteristics are detailed in the datasheet. The device is suitable for high-speed switching, solar inverters, welders, UPS systems, and other power conversion applications.\u003c\/p\u003e\n\u003cp\u003eFor complete specifications and detailed electrical characteristics, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-di\/di-dgtd65t60s2pt.pdf\" target=\"_blank\"\u003edatasheet\u003c\/a\u003e.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003ePart Number:\u003c\/strong\u003e DGTD65T60S2PT\u003cbr\u003e\n\u003cstrong\u003eManufacturer:\u003c\/strong\u003e DIODES ZETEX\u003cbr\u003e\n\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003cbr\u003e\n\u003cstrong\u003eUOM:\u003c\/strong\u003e EA\u003cbr\u003e\n\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003cbr\u003e\n\u003cstrong\u003ePackage Type:\u003c\/strong\u003e TUBE\u003c\/p\u003e\n\u003cp\u003e\u003cem\u003eNote: Datasheet was not processed, please search the internet for the part number for more details.\u003c\/em\u003e\u003c\/p\u003e\u003cbr\u003e"}
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