The DIODES ZETEX DMN2011UTS is a high-performance N-Channel enhancement mode MOSFET designed for efficient power management applications. Manufactured in China, this device offers low on-resistance and superior switching capabilities, making it ideal for various electronic systems requiring reliable power control.
Low Gate Threshold Voltage for efficient switching
Low On-Resistance (RDS(ON)) — 11mΩ at VGS = 4.5V, 13mΩ at VGS = 2.5V
Maximum Drain-Source Voltage (BVDSS): 20V
Continuous Drain Current: up to 21A at TA = +25°C
Pulsed Drain Current: 70A
Totally Lead-Free & Fully RoHS Compliant
ESD Protected Gate
Qualified to AEC-Q101 Standards for High Reliability
Package: TSSOP-8 with Matte Tin Finish
Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
20
—
—
V
Gate-Source Voltage
VGSS
±12
—
—
V
Gate Threshold Voltage
VGS(TH)
0.4
—
1.0
V
Static Drain-Source On-Resistance
RDS(ON)
7.2
9.0
13
mΩ
Drain Current (TA=+25°C)
ID
9.0
—
21
A
Pulsed Drain Current
IDM
70
—
—
A
Thermal & Mechanical Data
Characteristic
Symbol
Value
Unit
Total Power Dissipation (TA=+25°C)
PD
0.9
W
Thermal Resistance, Junction to Ambient
RθJA
144
°C/W
Operating & Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Application Areas
Battery Management
Power Management Functions
DC-DC Converters
For more detailed specifications, please refer to the full datasheet. If additional information is needed, search the internet for the part number DMN2011UTS.
Note: Datasheet was not processed. Please search the internet for the part number for more details.
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{"id":10025200484669,"title":"DMN2011UTS-13","handle":"dmn2011uts-13","description":"\u003ch3\u003eDIODES ZETEX DMN2011UTS N-CHANNEL MOSFET\u003c\/h3\u003e\n\u003cp\u003eThe DIODES ZETEX DMN2011UTS is a high-performance N-Channel enhancement mode MOSFET designed for efficient power management applications. Manufactured in China, this device offers low on-resistance and superior switching capabilities, making it ideal for various electronic systems requiring reliable power control.\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003ePart Number:\u003c\/strong\u003e DMN2011UTS\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eManufacturer:\u003c\/strong\u003e DIODES ZETEX\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eUnit of Measure:\u003c\/strong\u003e EA\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePackage Type:\u003c\/strong\u003e TAPE (TSSOP-8)\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eDatasheet:\u003c\/strong\u003e \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-di\/di-dmn2011uts-13.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eKey Features \u0026amp; Benefits\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eLow Gate Threshold Voltage for efficient switching\u003c\/li\u003e\n\u003cli\u003eLow On-Resistance (RDS(ON)) — 11mΩ at VGS = 4.5V, 13mΩ at VGS = 2.5V\u003c\/li\u003e\n\u003cli\u003eMaximum Drain-Source Voltage (BVDSS): 20V\u003c\/li\u003e\n\u003cli\u003eContinuous Drain Current: up to 21A at TA = +25°C\u003c\/li\u003e\n\u003cli\u003ePulsed Drain Current: 70A\u003c\/li\u003e\n\u003cli\u003eTotally Lead-Free \u0026amp; Fully RoHS Compliant\u003c\/li\u003e\n\u003cli\u003eESD Protected Gate\u003c\/li\u003e\n\u003cli\u003eQualified to AEC-Q101 Standards for High Reliability\u003c\/li\u003e\n\u003cli\u003ePackage: TSSOP-8 with Matte Tin Finish\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical Characteristics\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\"\u003e\n\u003ctr\u003e\n\u003cth\u003eCharacteristic\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source Breakdown Voltage\u003c\/td\u003e\n\u003ctd\u003eBVDSS\u003c\/td\u003e\n\u003ctd\u003e20\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eVGSS\u003c\/td\u003e\n\u003ctd\u003e±12\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate Threshold Voltage\u003c\/td\u003e\n\u003ctd\u003eVGS(TH)\u003c\/td\u003e\n\u003ctd\u003e0.4\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e1.0\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eStatic Drain-Source On-Resistance\u003c\/td\u003e\n\u003ctd\u003eRDS(ON)\u003c\/td\u003e\n\u003ctd\u003e7.2\u003c\/td\u003e\n\u003ctd\u003e9.0\u003c\/td\u003e\n\u003ctd\u003e13\u003c\/td\u003e\n\u003ctd\u003emΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain Current (TA=+25°C)\u003c\/td\u003e\n\u003ctd\u003eID\u003c\/td\u003e\n\u003ctd\u003e9.0\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e21\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePulsed Drain Current\u003c\/td\u003e\n\u003ctd\u003eIDM\u003c\/td\u003e\n\u003ctd\u003e70\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eThermal \u0026amp; Mechanical Data\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\"\u003e\n\u003ctr\u003e\n\u003cth\u003eCharacteristic\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eValue\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTotal Power Dissipation (TA=+25°C)\u003c\/td\u003e\n\u003ctd\u003ePD\u003c\/td\u003e\n\u003ctd\u003e0.9\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eThermal Resistance, Junction to Ambient\u003c\/td\u003e\n\u003ctd\u003eRθJA\u003c\/td\u003e\n\u003ctd\u003e144\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating \u0026amp; Storage Temperature Range\u003c\/td\u003e\n\u003ctd\u003eTJ, TSTG\u003c\/td\u003e\n\u003ctd\u003e-55 to +150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eApplication Areas\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eBattery Management\u003c\/li\u003e\n\u003cli\u003ePower Management Functions\u003c\/li\u003e\n\u003cli\u003eDC-DC Converters\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003eFor more detailed specifications, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-di\/di-dmn2011uts-13.pdf\" target=\"_blank\"\u003efull datasheet\u003c\/a\u003e. If additional information is needed, search the internet for the part number DMN2011UTS.\u003c\/p\u003e\n\u003cp\u003e\u003cem\u003eNote: Datasheet was not processed. Please search the internet for the part number for more details.\u003c\/em\u003e\u003c\/p\u003e\u003cbr\u003e","published_at":"2025-08-14T17:39:19+05:30","created_at":"2025-08-14T17:39:19+05:30","vendor":"Waldom Electonics","type":"Semiconductors","tags":["20V","21A","CH","DIODE","IMPORT_CSV","Mosfets","Semiconductors","WLDM"],"price":3382,"price_min":3382,"price_max":3382,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":50619749990717,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"DMN2011UTS-13","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"DMN2011UTS-13","public_title":null,"options":["Default Title"],"price":3382,"weight":250,"compare_at_price":null,"inventory_management":"shopify","barcode":"DMN2011UTS-13","requires_selling_plan":false,"selling_plan_allocations":[]}],"images":["\/\/thinkrobotics.com\/cdn\/shop\/files\/DMN2011UTS-13_55984091_65e114db.jpg?v=1755173363"],"featured_image":"\/\/thinkrobotics.com\/cdn\/shop\/files\/DMN2011UTS-13_55984091_65e114db.jpg?v=1755173363","options":["Title"],"media":[{"alt":null,"id":45837609632061,"position":1,"preview_image":{"aspect_ratio":1.0,"height":200,"width":200,"src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/DMN2011UTS-13_55984091_65e114db.jpg?v=1755173363"},"aspect_ratio":1.0,"height":200,"media_type":"image","src":"\/\/thinkrobotics.com\/cdn\/shop\/files\/DMN2011UTS-13_55984091_65e114db.jpg?v=1755173363","width":200}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eDIODES ZETEX DMN2011UTS N-CHANNEL MOSFET\u003c\/h3\u003e\n\u003cp\u003eThe DIODES ZETEX DMN2011UTS is a high-performance N-Channel enhancement mode MOSFET designed for efficient power management applications. Manufactured in China, this device offers low on-resistance and superior switching capabilities, making it ideal for various electronic systems requiring reliable power control.\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003ePart Number:\u003c\/strong\u003e DMN2011UTS\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eManufacturer:\u003c\/strong\u003e DIODES ZETEX\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eCountry of Origin:\u003c\/strong\u003e CN\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eUnit of Measure:\u003c\/strong\u003e EA\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eECCN:\u003c\/strong\u003e EAR99\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePackage Type:\u003c\/strong\u003e TAPE (TSSOP-8)\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eDatasheet:\u003c\/strong\u003e \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-di\/di-dmn2011uts-13.pdf\" target=\"_blank\"\u003eDownload Datasheet\u003c\/a\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eKey Features \u0026amp; Benefits\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eLow Gate Threshold Voltage for efficient switching\u003c\/li\u003e\n\u003cli\u003eLow On-Resistance (RDS(ON)) — 11mΩ at VGS = 4.5V, 13mΩ at VGS = 2.5V\u003c\/li\u003e\n\u003cli\u003eMaximum Drain-Source Voltage (BVDSS): 20V\u003c\/li\u003e\n\u003cli\u003eContinuous Drain Current: up to 21A at TA = +25°C\u003c\/li\u003e\n\u003cli\u003ePulsed Drain Current: 70A\u003c\/li\u003e\n\u003cli\u003eTotally Lead-Free \u0026amp; Fully RoHS Compliant\u003c\/li\u003e\n\u003cli\u003eESD Protected Gate\u003c\/li\u003e\n\u003cli\u003eQualified to AEC-Q101 Standards for High Reliability\u003c\/li\u003e\n\u003cli\u003ePackage: TSSOP-8 with Matte Tin Finish\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eElectrical Characteristics\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\"\u003e\n\u003ctr\u003e\n\u003cth\u003eCharacteristic\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eMin\u003c\/th\u003e\n\u003cth\u003eTyp\u003c\/th\u003e\n\u003cth\u003eMax\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source Breakdown Voltage\u003c\/td\u003e\n\u003ctd\u003eBVDSS\u003c\/td\u003e\n\u003ctd\u003e20\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-Source Voltage\u003c\/td\u003e\n\u003ctd\u003eVGSS\u003c\/td\u003e\n\u003ctd\u003e±12\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate Threshold Voltage\u003c\/td\u003e\n\u003ctd\u003eVGS(TH)\u003c\/td\u003e\n\u003ctd\u003e0.4\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e1.0\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eStatic Drain-Source On-Resistance\u003c\/td\u003e\n\u003ctd\u003eRDS(ON)\u003c\/td\u003e\n\u003ctd\u003e7.2\u003c\/td\u003e\n\u003ctd\u003e9.0\u003c\/td\u003e\n\u003ctd\u003e13\u003c\/td\u003e\n\u003ctd\u003emΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain Current (TA=+25°C)\u003c\/td\u003e\n\u003ctd\u003eID\u003c\/td\u003e\n\u003ctd\u003e9.0\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e21\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePulsed Drain Current\u003c\/td\u003e\n\u003ctd\u003eIDM\u003c\/td\u003e\n\u003ctd\u003e70\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eThermal \u0026amp; Mechanical Data\u003c\/h3\u003e\n\u003ctable border=\"1\" cellpadding=\"5\" cellspacing=\"0\"\u003e\n\u003ctr\u003e\n\u003cth\u003eCharacteristic\u003c\/th\u003e\n\u003cth\u003eSymbol\u003c\/th\u003e\n\u003cth\u003eValue\u003c\/th\u003e\n\u003cth\u003eUnit\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTotal Power Dissipation (TA=+25°C)\u003c\/td\u003e\n\u003ctd\u003ePD\u003c\/td\u003e\n\u003ctd\u003e0.9\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eThermal Resistance, Junction to Ambient\u003c\/td\u003e\n\u003ctd\u003eRθJA\u003c\/td\u003e\n\u003ctd\u003e144\u003c\/td\u003e\n\u003ctd\u003e°C\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating \u0026amp; Storage Temperature Range\u003c\/td\u003e\n\u003ctd\u003eTJ, TSTG\u003c\/td\u003e\n\u003ctd\u003e-55 to +150\u003c\/td\u003e\n\u003ctd\u003e°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\n\u003ch3\u003eApplication Areas\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eBattery Management\u003c\/li\u003e\n\u003cli\u003ePower Management Functions\u003c\/li\u003e\n\u003cli\u003eDC-DC Converters\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003eFor more detailed specifications, please refer to the \u003ca href=\"https:\/\/www.waldomapac.com\/upload\/parts\/datasheets\/mf-di\/di-dmn2011uts-13.pdf\" target=\"_blank\"\u003efull datasheet\u003c\/a\u003e. If additional information is needed, search the internet for the part number DMN2011UTS.\u003c\/p\u003e\n\u003cp\u003e\u003cem\u003eNote: Datasheet was not processed. Please search the internet for the part number for more details.\u003c\/em\u003e\u003c\/p\u003e\u003cbr\u003e"}
Unfortunately I havent tested the 5G, Only difficult part was connecting antennas. But everything is good, by default it runs on Qualcom's QMI mode, Had to switch to MBIM and it works good with Windows. Planning to run with OpenWRT soon.
