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OP516A

SKU: OP516A

Regular price ₹ 467.05
Sale price ₹ 467.05 Regular price
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OPTEK/TT ELECTRONICS OP516A Phototransistor

The OP516A is a high-quality NPN silicon phototransistor designed for optical detection applications. Manufactured by OPTEK/TT ELECTRONICS, this phototransistor offers reliable performance in space-constrained environments with its small hermetic package and extended collector lead. It features a narrow receiving angle for excellent on-axis coupling, making it suitable for precise sensing tasks.

Product Features

  • Variety of sensitivity ranges to suit different application requirements
  • Coaxial leaded package style for ease of integration
  • Compact package size ideal for space-limited applications
  • 100% production tested with infrared light for high accuracy

Technical Specifications

Parameter Min Typ Max Units Test Conditions
Collector Current (I C(ON)) 0.40 1.00 3.00 mA V = 5 V, E = 5.0 mW/cm²
Collector Dark Current (I CEO) 100 nA V = 1 V, E = 0, 0 V
Collector-Emitter Breakdown Voltage (V (BR)CEO) 30 V I = 10 μA
Emitter-Collector Breakdown Voltage (V (BR)ECO) 5 V I = 10 μA
Collector-Emitter Saturation Voltage (V CE(SAT)) 0.40 V I = 40 μA, E = 5.0 mW/cm²
Temperature Coefficient (ΔI / ΔT C) 1.00 %/°C V = 5 V, E = 1.0 mW/cm²
Emitter-Reverse Current (I ECO) 100 μA V = 0.4 V

Maximum Ratings

  • Continuous Collector Current: 50 mA
  • Collector-Emitter Voltage: 30 V
  • Storage & Operating Temperature Range: -55°C to +125°C
  • Lead Soldering Temperature: 260°C for 5 seconds with recommended RMA flux
  • Power Dissipation: 100 mW (derate linearly above 25°C)

Additional Information

Package Type: BLK

Part Number: OP516A

Manufacturer: OPTEK/TT ELECTRONICS

Country of Origin: MX

UOM: EA

ECCN: EAR99

Datasheet: Download Datasheet

Product images and further details are available at this link.

Note: The datasheet content has been summarized from provided data. For comprehensive specifications and application details, please refer to the full datasheet.


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